GB1429158A - N-type gallium antimonide and a mehtod for producing it - Google Patents

N-type gallium antimonide and a mehtod for producing it

Info

Publication number
GB1429158A
GB1429158A GB783474A GB783474A GB1429158A GB 1429158 A GB1429158 A GB 1429158A GB 783474 A GB783474 A GB 783474A GB 783474 A GB783474 A GB 783474A GB 1429158 A GB1429158 A GB 1429158A
Authority
GB
United Kingdom
Prior art keywords
gallium antimonide
gallium
seed
melt
antimonide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB783474A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKHN I IM AF IOFFE AKADEM
Original Assignee
FIZ TEKHN I IM AF IOFFE AKADEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKHN I IM AF IOFFE AKADEM filed Critical FIZ TEKHN I IM AF IOFFE AKADEM
Priority to GB783474A priority Critical patent/GB1429158A/en
Publication of GB1429158A publication Critical patent/GB1429158A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

1429158 Gallium antimonide FIZ-TEKH INST IM AF IOFFE AKAD NAUK SSSR 20 Feb 1974 7834/74 Heading C1A [Also in Division C7] N-type gallium antimonide which shows a slow variation of its resistivity to the equilibrium value when cooled is crystallized from a melt of gallium antimonide to which has been added 0À04 to 0À5% gallium and 0À001 to 0À01% sulphur dopant on to a rotating seed monocrystal of gallium antimonide. In the examples, an ingot of stoichiometric GaSb is pickled in a mixture of HF and HNO 3 , washed and dried and placed in a quartz ampoule with the gallium and sulphur. The mixture is melted under an atmosphere of hydrogen and then brought into contact with a seed monocrystal oriented lengthwise in the direction (111). The seed is continuously rotated and pulled from the melt and a crystal is grown on the surface (###) Sb of the feed.
GB783474A 1974-02-20 1974-02-20 N-type gallium antimonide and a mehtod for producing it Expired GB1429158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB783474A GB1429158A (en) 1974-02-20 1974-02-20 N-type gallium antimonide and a mehtod for producing it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB783474A GB1429158A (en) 1974-02-20 1974-02-20 N-type gallium antimonide and a mehtod for producing it

Publications (1)

Publication Number Publication Date
GB1429158A true GB1429158A (en) 1976-03-24

Family

ID=9840673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB783474A Expired GB1429158A (en) 1974-02-20 1974-02-20 N-type gallium antimonide and a mehtod for producing it

Country Status (1)

Country Link
GB (1) GB1429158A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570394A1 (en) * 1984-09-14 1986-03-21 Labo Electronique Physique PROCESS FOR MAKING A GALLIUM ARSENIUM MONOGRISTAL AND INDIUM
RU2528995C1 (en) * 2013-04-24 2014-09-20 Открытое акционерное общество " Государственный научно-исследовательский и проектный институт редкометаллической промышленности ОАО " Гиредмет" Method of producing large-size gallium antimonide monocrystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570394A1 (en) * 1984-09-14 1986-03-21 Labo Electronique Physique PROCESS FOR MAKING A GALLIUM ARSENIUM MONOGRISTAL AND INDIUM
EP0176130A1 (en) * 1984-09-14 1986-04-02 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Process for making a single crystal of an arsenide of gallium and indium
RU2528995C1 (en) * 2013-04-24 2014-09-20 Открытое акционерное общество " Государственный научно-исследовательский и проектный институт редкометаллической промышленности ОАО " Гиредмет" Method of producing large-size gallium antimonide monocrystals

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed