GB1414245A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1414245A
GB1414245A GB4840673A GB4840673A GB1414245A GB 1414245 A GB1414245 A GB 1414245A GB 4840673 A GB4840673 A GB 4840673A GB 4840673 A GB4840673 A GB 4840673A GB 1414245 A GB1414245 A GB 1414245A
Authority
GB
United Kingdom
Prior art keywords
polyimides
oct
benzene
derived
sulphone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4840673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1414245A publication Critical patent/GB1414245A/en
Expired legal-status Critical Current

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    • HELECTRICITY
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    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
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Abstract

1414245 Polyimides HITACHI Ltd 17 Oct 1973 [18 Oct 1972] 48406/73 Heading C3R [Also in Division H1] Polyimides of formula wherein m+n=x+y and m, n groups alternate with x, y groups are made by the reaction of diaminoaryl carbonamides, diaminoarylene compounds, and arylene acid dianhydrides. Preferably Ar 1 and Ar 3 are derived from benzene, naphthalene, diphenyl ether, diphenyl sulphone or di(phenoxyphenyl)sulphone, while Ar 2 and Ar 4 are derived from benzene, diphenyl ether or benzophenone. In the embodiment a solution of diaminodiphenyl-ether-3 carbonamide, diaminophenylether, pyromellitic acid dianhydride and benzophenonetetracarboxylic acid dianhydride in a molar ratio of 1 : 9 : 5 : 5 is coated on a silica surface on a semi-conductor device and polymerized in situ.
GB4840673A 1972-10-18 1973-10-17 Semiconductor device Expired GB1414245A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47103588A JPS5131185B2 (en) 1972-10-18 1972-10-18

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GB1414245A true GB1414245A (en) 1975-11-19

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GB4840673A Expired GB1414245A (en) 1972-10-18 1973-10-17 Semiconductor device

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JP (1) JPS5131185B2 (en)
FR (1) FR2209218B1 (en)
GB (1) GB1414245A (en)
HK (1) HK29979A (en)
MY (1) MY7900031A (en)
NL (1) NL163368C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1313136A1 (en) * 2001-11-16 2003-05-21 Shinko Electric Industries Co. Ltd. Semiconductor device and method for manufacturing the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017886A (en) 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
JPS5421073B2 (en) * 1974-04-15 1979-07-27
JPS516474A (en) * 1974-07-05 1976-01-20 Hitachi Ltd Pureenakozono handotaisochi
JPS51102569A (en) * 1975-03-07 1976-09-10 Hitachi Ltd HANDOTA ISOCHI
JPS57115834A (en) * 1981-01-10 1982-07-19 Nec Corp Manufacture of semiconductor device
JPS57160833A (en) * 1981-03-27 1982-10-04 Showa Aircraft Ind Co Ltd Method of handling air cargo containers and pallets, conveyors and dollies for use in this method
US4758476A (en) * 1984-12-12 1988-07-19 Hitachi Chemical Company, Ltd. Polyimide precursor resin composition and semiconductor device using the same
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices

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Publication number Priority date Publication date Assignee Title
GB1230421A (en) * 1967-09-15 1971-05-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1313136A1 (en) * 2001-11-16 2003-05-21 Shinko Electric Industries Co. Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
DE2352329A1 (en) 1974-05-02
JPS5131185B2 (en) 1976-09-04
NL7314375A (en) 1974-04-22
DE2352329B2 (en) 1977-02-24
NL163368C (en) 1980-08-15
HK29979A (en) 1979-05-18
MY7900031A (en) 1979-12-31
FR2209218A1 (en) 1974-06-28
NL163368B (en) 1980-03-17
JPS4962081A (en) 1974-06-15
FR2209218B1 (en) 1978-05-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19931016