FR2209218B1 - - Google Patents

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Publication number
FR2209218B1
FR2209218B1 FR7337180A FR7337180A FR2209218B1 FR 2209218 B1 FR2209218 B1 FR 2209218B1 FR 7337180 A FR7337180 A FR 7337180A FR 7337180 A FR7337180 A FR 7337180A FR 2209218 B1 FR2209218 B1 FR 2209218B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7337180A
Other languages
French (fr)
Other versions
FR2209218A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2209218A1 publication Critical patent/FR2209218A1/fr
Application granted granted Critical
Publication of FR2209218B1 publication Critical patent/FR2209218B1/fr
Expired legal-status Critical Current

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    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
FR7337180A 1972-10-18 1973-10-18 Expired FR2209218B1 (en)

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US4017886A (en) 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
JPS5421073B2 (en) * 1974-04-15 1979-07-27
JPS516474A (en) * 1974-07-05 1976-01-20 Hitachi Ltd Pureenakozono handotaisochi
JPS51102569A (en) * 1975-03-07 1976-09-10 Hitachi Ltd HANDOTA ISOCHI
JPS57115834A (en) * 1981-01-10 1982-07-19 Nec Corp Manufacture of semiconductor device
JPS57160833A (en) * 1981-03-27 1982-10-04 Showa Aircraft Ind Co Ltd Method of handling air cargo containers and pallets, conveyors and dollies for use in this method
US4758476A (en) * 1984-12-12 1988-07-19 Hitachi Chemical Company, Ltd. Polyimide precursor resin composition and semiconductor device using the same
US6294799B1 (en) 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5940732A (en) * 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices
JP2003151981A (en) * 2001-11-16 2003-05-23 Shinko Electric Ind Co Ltd Semiconductor device and manufacturing method thereof

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