HK29979A - Improvements in or relating to a semiconductor device - Google Patents

Improvements in or relating to a semiconductor device

Info

Publication number
HK29979A
HK29979A HK299/79A HK29979A HK29979A HK 29979 A HK29979 A HK 29979A HK 299/79 A HK299/79 A HK 299/79A HK 29979 A HK29979 A HK 29979A HK 29979 A HK29979 A HK 29979A
Authority
HK
Hong Kong
Prior art keywords
relating
semiconductor device
semiconductor
Prior art date
Application number
HK299/79A
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK29979A publication Critical patent/HK29979A/en

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Classifications

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    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
HK299/79A 1972-10-18 1979-05-10 Improvements in or relating to a semiconductor device HK29979A (en)

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JP (1) JPS5131185B2 (en)
FR (1) FR2209218B1 (en)
GB (1) GB1414245A (en)
HK (1) HK29979A (en)
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NL (1) NL163368C (en)

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Publication number Priority date Publication date Assignee Title
US4017886A (en) 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
JPS5421073B2 (en) * 1974-04-15 1979-07-27
JPS516474A (en) * 1974-07-05 1976-01-20 Hitachi Ltd Pureenakozono handotaisochi
JPS51102569A (en) * 1975-03-07 1976-09-10 Hitachi Ltd HANDOTA ISOCHI
JPS57115834A (en) * 1981-01-10 1982-07-19 Nec Corp Manufacture of semiconductor device
JPS57160833A (en) * 1981-03-27 1982-10-04 Showa Aircraft Ind Co Ltd Method of handling air cargo containers and pallets, conveyors and dollies for use in this method
US4758476A (en) * 1984-12-12 1988-07-19 Hitachi Chemical Company, Ltd. Polyimide precursor resin composition and semiconductor device using the same
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices
JP2003151981A (en) * 2001-11-16 2003-05-23 Shinko Electric Ind Co Ltd Semiconductor device and manufacturing method thereof

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NL163368B (en) 1980-03-17
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JPS5131185B2 (en) 1976-09-04
NL7314375A (en) 1974-04-22
DE2352329B2 (en) 1977-02-24
DE2352329A1 (en) 1974-05-02
FR2209218B1 (en) 1978-05-26
NL163368C (en) 1980-08-15
FR2209218A1 (en) 1974-06-28

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