DE2352329A1 - SEMI-CONDUCTOR DEVICE - Google Patents
SEMI-CONDUCTOR DEVICEInfo
- Publication number
- DE2352329A1 DE2352329A1 DE19732352329 DE2352329A DE2352329A1 DE 2352329 A1 DE2352329 A1 DE 2352329A1 DE 19732352329 DE19732352329 DE 19732352329 DE 2352329 A DE2352329 A DE 2352329A DE 2352329 A1 DE2352329 A1 DE 2352329A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- polymer resin
- resin layer
- semiconductor
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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Description
HalbleitervorrichtungSemiconductor device
Die Erfindung betrifft eine getrennte bzw. abgesonderte Halbleitervorrichtung und insbesondere eine Elektrodenstruktur der getrennten bzw. abgesonderten Halbleitervorrichtung sowie ein Verfahren zu ihrer Herstellung.The invention relates to a separate semiconductor device and in particular, an electrode structure of the separated semiconductor device as well a method of making them.
Bekanntlich bestehen die herkömmlichen Transistoren des planaren Typs aus einem Halbleiterkörper, der als Kollektor bzw. Sammler wirkt, einer ersten Halbleitergegend mit entgegengesetztem Leitfähigkeitstyp wie bei dem Körper, welche in dem Körper angeordnet ist und die als Basis wirkt, einer zweiten Halbleitergegend mit gleichem Leitfähigkeitstyp wie bei dem Körper, die in der ersten Halbleitergegend angeordnet ist und die als Sender wirkt, einer Isolierungsschicht, die auf der Oberfläche des Körpers angebracht ist,und Elektroden, welche durch die Isolierungsschicht hindurch mit den ersten und zweiten Gegenden in Berührung stehen. Bei einem solchen Transistor wird als Isolierungsschicht eine solche aus SiOg verwendet. Zur Verbindung der Elektroden mit äußeren Anschlüssen sind an die Elektroden Drähte angeheftet. Da gewöhnlich der Durchmesser der Elektrode klein ist und z.B. 60 bis 100 /U beträgt, ist die Verbindung der Drähte mit den Elektroden ein sehr schwieriges Problem, so daß hierdurch Hindernisse für dieAs is well known, the conventional transistors consist of the planar Type of a semiconductor body, which acts as a collector, a first semiconductor region with opposite Conductivity type as in the case of the body, which is arranged in the body and which acts as a base, a second Semiconductor region with the same conductivity type as in the case of the body, which is arranged in the first semiconductor region and which acts as a transmitter, an insulating layer which is applied to the surface of the body, and electrodes which are in contact with the first and second regions through the insulation layer. With such a transistor a SiOg layer is used as the insulation layer. Wires are attached to the electrodes to connect the electrodes to external connections. Since usually the diameter the electrode is small, e.g. 60 to 100 / rev, the connection of the wires to the electrodes is a very difficult problem, so that this creates obstacles for the
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Massenproduktion der Transistoren und für eine vollautomatisierte Herstellung der Transistoren gegeben werden. Diese Hindernisse können überwunden werden, wenn man Elektroden vorsieht, die große Durchmesser haben, oder wenn man Elektroden vorsieht, die sich auf die Oberfläche der SiO2-Schicht erstrecken. Bei "Verwendung von Elektroden mit großen Durchmessern sollte jedoch die Größe des Halbleiterkörpers groß sein, so daß die Kosten für den Transistor hoch werden. Wenn andererseits Elektroden verwendet werden, die sich auf die Oberfläche der SiOp-Schicht erstrecken, dann liegen, da die SiOp-Schicht nicht so dick hergestellt werden kann, Kapazitäten zwischen den Elektroden und dem Körper vor, so daß nicht nur die Charakteristik des Transistors verschlechtert wird, sondern es auch sehr schwierig wird, einen Transistor mit der gewünschten Charakteristik zu gestalten.Mass production of the transistors and a fully automated production of the transistors are given. These obstacles can be overcome by providing electrodes that are large in diameter or by providing electrodes that extend onto the surface of the SiO 2 layer. However, when "large-diameter electrodes are used, the size of the semiconductor body should be large, so that the cost of the transistor becomes high. On the other hand, when electrodes are used which extend onto the surface of the SiOp layer, the SiOp is located Layer cannot be made so thick, there is capacitance between the electrodes and the body, so that not only is the characteristic of the transistor deteriorated, but it is also very difficult to design a transistor with the desired characteristic.
Bei den herkömmlichen getrennten bzw. abgesonderten Transistoren bringt daher die Struktur der Elektrode Schwierigkeiten hinsichtlich der Massenproduktion der Transistoren, der vollautomatisierten Produktion der Transistoren, der Kosten der Transistoren und schließlich der Charakteristiken der Transistoren mit sich.In the conventional separate transistors, therefore, the structure of the electrode poses a problem with regard to the mass production of the transistors, the fully automated production of the transistors, the cost of the Transistors and finally the characteristics of the transistors.
Ziel der Erfindung ist es daher, eine getrennte bzw. abgesonderte Halbleitervorrichtung zu schaffen, bei welcher die obengenannten Nachteile der herkömmlichen Halbleitervorrichtungen nicht mehr vorliegen. Weiterhin soll durch die Erfindung die vollautomatisierte Massenherstellung von solchen Halbleitervorrichtungen, z.B. Transistoren oder Dioden, ermöglicht werden.The aim of the invention is therefore to provide a separate or separate To provide a semiconductor device in which the above-mentioned disadvantages of the conventional semiconductor devices no longer exist. Furthermore, the invention is intended to enable the fully automated mass production of such Semiconductor devices such as transistors or diodes.
Dieses Ziel wird nach der Erfindung dadurch erreicht, daß man auf der auf der Oberfläche des Halbleiterkörpers vorgesehenen Isolierungsschicht eine Schicht aus einem Polymerharz vorsieht. This object is achieved according to the invention in that one is provided on the surface of the semiconductor body Insulation layer provides a layer of a polymer resin.
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Die Erfindung wird anhand der beigefügten Zeichnungen näher erläutert. Es zeigenThe invention is explained in more detail with reference to the accompanying drawings explained. Show it
Fig. 1 einen Querschnitt eines herkömmlichen Transistors des planaren Typs,Fig. 1 is a cross section of a conventional planar type transistor;
Fig. 2 einen Längsschnitt einer Ausführungsform der vorliegenden Erfindung,2 shows a longitudinal section of an embodiment of the present invention,
Fig. 2a und 2b Längsschnitte, die das Verfahren zur Herstellung der in Fig. 2 gezeigten Ausführungsform erläutern, 2a and 2b are longitudinal sections showing the method explain for the production of the embodiment shown in Fig. 2,
Fig. 3 einen Längsschnitt einer weiteren Ausführungsform der vorliegenden Erfindung,3 shows a longitudinal section of a further embodiment of the present invention,
Fig. 4 einen Längsschnitt einer weiteren Ausführungsform der vorliegenden Erfindung,4 shows a longitudinal section of a further embodiment of the present invention,
Fig. 4a und 4b Längsschnitte, welche das Verfahren zur Herstellung der weiteren, in Fig. 4 gezeigten Ausführungsform erläutern, 4a and 4b are longitudinal sections which explain the method for producing the further embodiment shown in FIG. 4,
Fig. 5 einen Längsschnitt einer weiteren Ausführungsform der vorliegenden Erfindung,5 shows a longitudinal section of a further embodiment of the present invention,
Fig. 5a bis 5c Längsschnitte, welche ein Herstellungsverfahren für die weitere, in Fig. 5 gezeigte Ausführungsform erläutern, und5a to 5c are longitudinal sections showing a manufacturing method for the further embodiment shown in FIG. 5, and
Fig. 6 ein Diagramm, das die Beziehung zwischen der Dicke der hitzehärtenden Polymerschicht and der Bindungsausbeute zeigt. Fig. 6 is a diagram showing the relationship between the Shows the thickness of the thermosetting polymer layer and the bond yield.
Die Fig. 1 zeigt einen Querschnitt eines Beispiels eines herkömmlichen getrennten bzw. abgesonderten Transistors des planaren Typs. Dieser besteht aus einem Halbleiterkörper 1, welcher als Kollektor bzw. Sammler wirkt, einer ersten Halbleitergegend 2 mit entgegengesetztem Lei1;fähigkeitstyp wie beim Körper 1, die in dem Körper 1 angeordnet ist und die als Basis des Transistors wirkt, einer zweiten Halbleitergegend mit umgekehrter Leitfähigkeit wie die erste Halbleitergegend 3» welche in der ersten Halbleitergegehd 2 angeordnet ist und die als Sender des Transistors wirkt, eimer Isolierungsschicht 4, die auf der Oberfläche des Halbleiterkörpers 1 angeordnetFig. 1 shows a cross section of an example of a conventional one separate transistor of the planar type. This consists of a semiconductor body 1, which acts as a collector or collector, a first semiconductor area 2 with opposite lei1; ability type as in body 1, which is arranged in body 1 and which is called The base of the transistor acts as a second semiconductor region with the opposite conductivity as the first semiconductor region 3 » which is arranged in the first semiconductor device 2 and which acts as the transmitter of the transistor, bucket insulation layer 4, which is arranged on the surface of the semiconductor body 1
409818/0897409818/0897
ist, lind die öffnungen für Metallelektroden besitzt, wovon eine eine Basis-Elektrode 5 und die andere eine Sender-Elektrode 6 ist, sowie aus Drähten 7 und 8, die an die Basis-Elektrode 5 und an die Sender-Elektrode 6 angeheftet sind. Die Drähte 7 und 8 sind mit äußeren Anschlüssen verbunden, an die äußere Elemente, Stromkreise oder Stromquellen angeschlossen sind.is, lind has openings for metal electrodes, of which one is a base electrode 5 and the other is a transmitter electrode 6, as well as wires 7 and 8 connected to the base electrode 5 and attached to the transmitter electrode 6. The wires 7 and 8 are connected to external terminals, on the external elements, circuits or power sources connected are.
Da, wie bereits ausgeführt 9 der Durchmesser1 der Elektroden 5 und β gewöhnlich sehr .klein, z.B. 60 Ms 100/u, ist, muß der Anhaftung der Drähte 7 und 8 an den Elektroden 5 und 6 erhebliche Aufmerksamkeit zugewendet werden» Es wird daher sehr schwierig, die Transistoren in Massenproduktion oder vollautomatisch herzustellen«, Die automatische Massenproduktion der Transistoren wird aber sehr stark angestrebte Obgleich diesem Bestreben genüge getan werden kam9 wenn man Elektroden mit großen Durchmessern oder Elektroden vorsieht, die sich auf die Oberfläche der Isolierungsschiclrfc 4 erstrecken, bewirkt die erstere Möglichkeit3 daß die Größe der· Halbleitergegenden 2 und 3 und. des Halbleiterkörpers 1 groB wir-d9 so daß die Transistorkosten hoch '.v/erden, während letztere Möglichkeit bewirkt, daß die Kapazität to. lapszitanz zwischen der Elektrode wad dem Halbleiterkörper groß wird9 so daß die Charakteristik des Transistors schlecht wird« Zur Vernd.nde.rung der Kapazität bzw, der Kapasitanz sind bislang, obgleich dicke Isolierungsfilme angestrebt werden, noeii keine grundlegenden Ideen isäußert !-/orden«. Bei eier Bildung der Isolierungsschicht 4 aus SiO9 durch chemische Dampfabseheidimg oder durch Zer- !Stäuben beträgt die obere Grenz© der SiQ^-Dieke bei der ehemischen Dampf abscheidung etwa 195/u und bei dem, Zerstäubungsve2°fa'iren etwa 4/Ue .Ss siiimat jedoch einen Zeitzmua von etwa 7 Stunden in Anspruch, beim Zerstäubungsirerfalirea eine SiOg-Schicht mit einer Dicke von 4/u zu erhalten 3 da es erforderlieh ist, daß die ¥achstunisgesehwindigke£t des SiO0 geringer ist als 6000 A/h? damit die Bildung von Rissen durch die Spannungen von SiOp verhindert xirird und "die VerschlechterungSince, as already stated 9, the diameter 1 of the electrodes 5 and β is usually very small, for example 60 Ms 100 / u, considerable attention must be paid to the adhesion of the wires 7 and 8 to the electrodes 5 and 6 very difficult to automatically prepare the transistors in mass production or "the automatic mass production of the transistors but very strongly desired Although this effort was to be sufficient done 9 when electrodes providing large diameter or electrodes that extend to the surface of Isolierungsschiclrfc 4, The former possibility 3 causes the size of the semiconductor regions 2 and 3 and. of the semiconductor body 1 Coarse we-d 9 so that the cost is high transistor .v / ground ', while the latter option causing the capacity to. lapses between the electrode wad the semiconductor body becomes large 9 so that the characteristics of the transistor become poor. . When eggs forming the insulation layer 4 made of SiO 9 by chemical decomposition or by Dampfabseheidimg! Dusts is the upper limit of the SiQ © ^ -Dieke deposition in the steam before mixing about 1 9 5 / u and fa'iren wherein, Zerstäubungsve2 about 4 ° However / Ue .ss siiimat a Zeitzmua of about 7 hours, and to obtain in a Zerstäubungsirerfalirea SiOg layer having a thickness of 4/3 since it is erforderlieh that the ¥ £ t achstunisgesehwindigke of SiO 0 is less than 6000 a / h ? thus the formation of cracks due to the stresses of SiOp prevents xirird and "the deterioration
408818/089?408818/089?
der Charakteristik der Halbleitervorrichtung verhindert wird. Zur Erhöhung der Produktivität wird gewöhnlich eine SiO -Schicht mit einer Dicke von 1 m. bei Halbleitervorrichtungen verwendet. Es ist aber für technische Stromkreise der Transistoren sehr anzustreben, daß Transistoren herstellbar sind? die selbst bei einer automatischen Massenproduktion, eine verminderte Kapazität bziff» Kapazitanz besitzen»the characteristic of the semiconductor device is prevented. In order to increase productivity, an SiO 3 layer 1 m thick is usually used in semiconductor devices. But it is very important for technical circuits of transistors that transistors can be produced ? which, even with automatic mass production, have a reduced capacity or »capacitance»
Die erfindungsgemäße Halbleitervorrichtung enthält nun folgendes % einen Halbleiterkörper a eine Halbleitergegend mit umgekehrtem Leitfähigkeitstyp wie beim Halbleiterkörper§ welche in dem Halbleiterkörper angeordnet ist, eine Isolierungsschicht s die auf einer Oberfläche des Halbleiterkörpers angeordnet istj eine Polymerharzschichts die auf der Isolierungsschicht angeordnet ists und eine Elektrode durch die Isolierungsschicht und die Folymerharzschichts, welche die Halbleitergegend berührt und die sich auf mindestens einem Teil der Oberfläche der Polymerharzschicht erstreckteThe semiconductor device according to the invention now contains the following % a semiconductor body a a semiconductor region with the opposite conductivity type as in the semiconductor body which is arranged in the semiconductor body, an insulation layer s arranged on a surface of the semiconductor body j a polymer resin layer s arranged on the insulation layer s and an electrode through the insulating layer and the polymer resin layer which contacts the semiconductor area and which extended on at least a part of the surface of the polymer resin layer
Da erfindungsgemäß die Polymerharzschicht genügend■dick ge= staltet werden kann und somit sich die Elektrode weit auf der Polymerharzschicht erstrecken kanns wird es möglich9 die Kapazität bzw» Kapazitanz zwischen der Elektrode und dem Halbleiterkörper zu vermindern und auch bei Bedingungen der automatischen Massenproduktion einen Draht an der Elektrode an= zuheften«Since according to the invention, the polymer resin layer sufficiently ■ thick ge = can be staltet and thus can extend the electrode largely on the polymer resin layer s is it possible to 9, the capacity or "capacitance between the electrode and the semiconductor body to reduce and even in conditions of the automatic mass production a wire to the electrode = attach "
Da weiterhin erfindungsgemäß der Durchmesser der Elektrode klein gehalten werden kann2 kann die Größe des Halbleiterkörpers kleiner gestaltet werden als bei einer herkömmlichenFurther, since the diameter of the electrode can be made small according to the invention 2, the size of the semiconductor body can be made smaller than in a conventional
Da weiterhin erfindungsgemäß auf der Oberfläche des Halbleiterkörpers eine Polymerharzschicht angeordnet ists wird hierdurch die Oberflächenstabilisierung der Halbleitervorrichtung erhöht.'Since s is further arranged according to the invention on the surface of the semiconductor body a polymer resin layer is thereby increases the surface stability of the semiconductor device. '
409 818/089?409 818/089?
Die Erfindung wird näher anhand der Fig. 2 bis 6 erläutert.The invention is explained in more detail with reference to FIGS.
Die Fig. 2 zeigt einen Querschnitt eines Transistors des planaren Typs, welcher eine Ausführungsform der vorliegenden Erfindung entspricht.Fig. 2 shows a cross section of a planar type transistor which is an embodiment of the present invention Invention corresponds.
Durch das Bezugszeichen 20 wird in der Fig. 2 ein Si-Körper des η-Typs angegeben, der als Sammler bzw. Kollektor des Transistors wirkt» In diesem ist eine erste Halbleitergegend 21 des p-Typs angeordnet 9 die als Basis des Transistors wirkt. Das Bezugszeichen 22 bezeichnet eine zweite Halbleitergegend des η-Typs, die in der ersten Halbleitergegend 21 angeordnet ist und die als Sender des Transistors wirkt» 23 bedeutet eine SiOp-Schicht, die auf der Oberfläche des Si-Körpers 20 angeordnet ist und die eine Polymerharzschicht 24 mit einer Dicke von 5/u trägt. 25 bedeutet eine Basis-Elektrode, die durch die Polymerharz schicht 24 und die SiOp-Schicht 23 hindurchdringt und in Berührung mit der ersten Halbleitergegend 21 steht. Die Elektrode 25 besteht aus einer ersten Metallschicht 26 und einer zweiten Metallschicht 27, die sich bis zu einem Teil der Oberfläche der Polymerharzschicht 26 erstreckt. Das Bezugszeichen 28 bedeutet eine Sender-Elektrode, die durch die Polymerharzschicht 24 und die SiQ^-Schicht 23 hindurchgeht und in Berührung mit der zweiten Halbleitergegend 22 steht. Diese Elektrode besteilt aus einer dritten Metallschicht 29 und einer vierten Metallschicht 30, die sich bis zu einem anderen Teil der Oberfläche der Polymerharzschicht 26 erstreckt als der Teil, an welchem die zweite Metallschicht 27 angeordnet ist. Die Bezugszeichen 31 und 32 bezeichnen schließlich Drähte, die an die zweite Metallschicht 27 bzw. an die vierte Metallschicht 30 angeheftet sind.The reference numeral 20 in FIG. 2 indicates a Si body of the η-type, which acts as a collector of the transistor. In this a first semiconductor region 21 of the p-type is arranged 9 which acts as the base of the transistor. Numeral 22 denotes a second η-type semiconductor region which is disposed in the first semiconductor region 21 and which acts as a transmitter of the transistor »23 denotes a SiOp layer which is disposed on the surface of the Si body 20 and which is a polymer resin layer 24 with a thickness of 5 / u. 25 denotes a base electrode which penetrates through the polymer resin layer 24 and the SiOp layer 23 and is in contact with the first semiconductor region 21. The electrode 25 consists of a first metal layer 26 and a second metal layer 27, which extends up to a part of the surface of the polymer resin layer 26. Reference numeral 28 denotes a transmitter electrode which passes through the polymer resin layer 24 and the SiQ ^ layer 23 and is in contact with the second semiconductor region 22. This electrode consists of a third metal layer 29 and a fourth metal layer 30, which extends to a different part of the surface of the polymer resin layer 26 than the part on which the second metal layer 27 is arranged. Finally, the reference numerals 31 and 32 denote wires which are attached to the second metal layer 27 and to the fourth metal layer 30, respectively.
Der erfindungsgemäße Transistor wird hergestellt, indem der Halbleiterkörper 20 des η-Typs hergestellt wird, in den Körper 20 Bor hineindiffundiert wird, um die erste Gegend 21 zu bilden, die als Basis wirkt, in die erste Halbleiterge-The transistor of the present invention is fabricated by fabricating the η-type semiconductor body 20 into the body 20 boron is diffused in to form the first region 21, which acts as a base into which the first semiconductor
/. η Cj η 1 £ j 0 H Q 1 /. η Cj η 1 £ j 0 HQ 1
gend 21 Phosphor hineindiffundiert wirds um die zweite Halbleitergegend 22 zu bilden, die als Sender wirkt, auf der Oberfläche des Körpers 20 eine SiO2-Schicht 23 gebildet wird, in der SiOp-Schicht 23 Öffnungen gebildet werden, um die Oberfläche eines Teils der ersten Halbleitergegend 21 und eines Teils der zweiten Halbleitergegend 22 freizulegen9 in den Öffnungen die erste Metallschicht 26 aus Al und die dritte Metallschicht 29 aus Al gebildet werden (Fig« 2a), auf den Oberflächen der SiOp-Schicht 23 und der ersten und dritten Metallschicht 26 und 29 die Polymerharzschicht 24 mit einer Dicke von 5 /u gebildet wirds an entsprechenden Teilen der ersten und dritten Metallschicht 26 und 29 eine Metallschicht 33 mit Öffnungen 34 und 35 gebildet wird (Fig. 2b), die Polymerharzschicht selektiv durch die Öffnungen 34 und 35 geätzt wirds um die Oberflächen der ersten und dritten Metallschichten 26 und 29 freizulegen, die Metallschicht 33 entfernt wird,· die zweite Metallschicht 27 und die vierte Metallschicht 30 gebildet werden, so daß ein Teil derselben jeweils mit der ersten und dritten Metallschicht 26 und 29 verbunden ist und ein anderer Teil derselben sich auf der Oberfläche der Polymerharzschicht erstreckt 9 und indem, schließlich an die zweite Metallschicht 27 und die vierte Metallschicht 30 Drähte 31 und 32 angeheftet werden=quietly 21, phosphorus is diffused to form s to the second semiconductor region 22, which acts as a transmitter, a SiO on the surface of the body 20 2 layer 23 is formed, 23 openings are formed in the SiOP layer to the surface of a portion of the first semiconductor region 21 and part of the second semiconductor region 22 to expose 9 in the openings the first metal layer 26 of Al and the third metal layer 29 of Al are formed (Fig «2a), on the surfaces of the SiOp layer 23 and the first and third metal layers s 26 and 29, the polymer resin layer 24 having a thickness of 5 / u at respective parts of the first and third metal layers 26 and 29 a metal layer 33 is formed with openings 34 and 35 (Fig. 2b), the polymer resin layer selectively through the openings 34 and 35 is etched to expose the surfaces of the first and third metal layers 26 and 29, the metal layer 33 is removed, the second metal layer 27 and the fourth metal layer 30 are formed so that a part thereof is connected to the first and third metal layers 26 and 29, respectively, and another part thereof extends on the surface of the polymer resin layer 9 and by, finally, to the second metal layer 27 and the fourth metal layer 30 Wires 31 and 32 are pinned =
Als Polymere für die Polymerharzschicht 24 können alle Polymerharze , ZoBo thermoplastische Polymerharze wie Tetrafluoräthylen (Teflon) und Copolymere von fluorierten Äthylen- und Propylenverbindungenρund wärmehärtende Polymerharze 9 z.B. Polyimide, Epoxy j, Phenol v Polycarbonat8 Polyamid und Polyb.enzimidazo!harze, verwendet werden» Für die Zwecke der Erfindung' sind jedoch wärmehärtende Polymerharze .gegenüber den thermoplastischen Polymerharzen zu bevorzugen^ da bei Verwendung von wärmehärtenden Polymerharzen für die Polymerharzschicht 24 die Bindetemperatur zur Anhaftung der Drähte 31 und 32 an die zweite und vierte Metallschicht 27 und 30 höher wird als bei der Verwendung von thermoplastischen Polymerhar^en für dieAs polymers for the polymer resin layer 24, all polymer resins, ZoBo thermoplastic polymer resins such as tetrafluoroethylene (Teflon) and copolymers of fluorinated ethylene and propylene compounds and thermosetting polymer resins 9, for example polyimides, epoxy j, phenol v polycarbonate 8 polyamide and polyb.enzimidazo resins, can be used » For the purposes of the invention, however, thermosetting polymer resins are preferred over thermoplastic polymer resins, since when thermosetting polymer resins are used for the polymer resin layer 24, the bonding temperature for adhering the wires 31 and 32 to the second and fourth metal layers 27 and 30 is higher than for the use of thermoplastic polymer resins for the
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Polymerharzschicht 24. Dies ist darauf zurückzuführen, daß die Erweichungstemperatur der wärmehärtenden Polymerharze höher ist als diejenige der thermoplastischen Polymerharze. Obwohl kurze Zeitspannen für die Verbindung und höhere Bindungstemperaturen als 3000C für das automatische Anheften der Drähte angestrebt werden, liegt die Erweichungstemperatur von Tetrafluoräthylen oder ähnlichen thermoplastischen Polymerharzen bei etwa 200 bis 2500C, so daß die Drähte an die Metallschichten innerhalb des angegebenen Erweichungstemperaturbereichs während langer Zeitspannen angeheftet werden sollen.Polymer resin layer 24. This is because the softening temperature of the thermosetting polymer resins is higher than that of the thermoplastic polymer resins. Although short periods of time for the connection and higher bonding temperatures than 300 ° C. for the automatic attachment of the wires are aimed for, the softening temperature of tetrafluoroethylene or similar thermoplastic polymer resins is about 200 to 250 ° C., so that the wires to the metal layers are within the specified softening temperature range to be attached for long periods of time.
Wenn weiterhin Tetrafluoräthylen als Polymerharz für die Polymerharzschicht 24 verwendet wird» dann muß dieser Kunststoff in Form eines.feinen Pulvers oder ©ines dünnen Films über die in dem Halbleiterkörper angebrachte SiOg-Schicht aufgebracht und gegen diese unter Erwärmen und unter erheblichem Druck angepreßt v/erden.If further tetrafluoroethylene as the polymer resin for the polymer resin layer 24 is used »then this plastic must be used in the form of a fine powder or a thin film over the applied in the semiconductor body applied SiOg layer and v / ground against this under heating and under considerable pressure.
Aus d@n obengenannten Gründen sind di© wärmehärtenden Polymerharze für die Zwecke der vorliegenden Erfindung mehr bevorzugt - als die thermoplastischen Polymerharze.For the reasons mentioned above, these are thermosetting polymer resins more preferred for the purposes of the present invention than the thermoplastic polymer resins.
Bei der obigen Ausführungsform wird für die Polymerharz-schicht 24 ein Poiylmidh'arz verwendet. Die Polymerharzschicht 24 wird wie folgt, hergestellt.In the above embodiment, the polymer resin layer 24 a polyamide resin is used. The polymer resin layer 24 is as follows.
Es wird eine Polyimidlösung mit folgender Zusammensetzung hergestellt :A polyimide solution with the following composition is produced :
Nichtfnichtige Bestandteile;Non-essential ingredients;
4,4'-Diaminodiphenyläther-3-carbonamId 5 Viol-% 4,4'-Diaminodlphenyläther 45 Mol-%4,4'-Diaminodiphenyläther-3-carbonamId 5 Viol-% 4,4'-Diaminodiphenyläther 45 Mol-%
Pyromellitsäure-dianhydrid 25 Mol-#Pyromellitic acid dianhydride 25 mol #
3 s 3f, 4,4! -BenzophenoFitetracarbonsäuredianhydrid · 25 MoI-Ji3 s 3 f , 4,4 ! -BenzophenoFitetracarboxylic acid dianhydride · 25 MoI-Ji
409818/0897409818/0897
352329352329
N-Methyl-2»pyrrolidon 50 Qew.% N-methyl-2 »pyrrolidone 50 % by weight
I^N-Dimethylacetoamid 50 Gew.JiI ^ N-dimethylacetoamide 50 wt. Ji
!Concentration der nichtflüchtigen Stoffes 20 Gewe?6 Viskosität der Lösungg etwa! Concentration of the non-volatile substance 20 Gew e ? 6 viscosity of the solutiong approximately
Di® Präpolymerlösung des Polyimids wird auf die Oberflächen der SiOg-Sehicht 23 und der ersten und dritten Metallschichten durch einen Rotor mit etwa 5000 U/min aufgebrachte Auf diese Weise wird eine Polymerharzschicht mit einer Dicke von 1/u gebildet., Zur Ausbildung einer Polymerharzschicht mit der gewünschten Dicke wird die Viskosität der Lösung 9 die Konzentration der nichtflüchtigen Bestandteile und/oder die Umdrehungsgeschwindigkeit des Rotors entsprechend eingestellt oder die Lösung wird durch eine Falzaufbringung gebildet» Durch die angegebenen Maßnahmen kann die Dicke der Polymerharzschicht so eingestellt werden^ daß sie je nachdem,, wie es im Einzelfall gewünscht wird8 weniger als 1/u bis mehr als 10/u beträgt. Bei der obigen Ausführungsform wird eine Polymerharzschicht mit einer Dicke von 5/u gebildet„The prepolymer solution of the polyimide is applied to the surfaces of the SiOg layer 23 and the first and third metal layers by a rotor at about 5000 rpm. In this way, a polymer resin layer with a thickness of 1 / u is formed with the desired thickness, the viscosity of the solution 9, the concentration of the non-volatile constituents and / or the speed of rotation of the rotor is adjusted accordingly or the solution is formed by applying a fold ,, as required in individual cases 8 is less than 1 / u to more than 10 / u. In the above embodiment, a polymer resin layer with a thickness of 5 / u is formed "
die dritte Metallschicht 27 mit der ersten Metallschicht und die vierte Metallschicht 30 mit der zweiten Metallschicht 29 in Kontakt zu bringen 9 werden in der Polymerharzschicht durchgehende Löcher erzeugt, indem auf der Oberfläche der Polymerharzschicht 24 eine Metallschicht 33 mit Öffnungen 34 und 35 an entsprechenden Teilen der erstsn und dritten Metall-, schicht 26 und 29 ausgebildet wird und indem die unter den Öffnungen 34 und 35 freigelegte Polymerhsrzschicht durch ein Sauerstoff plasma geätzt wirde, Zur Wegätzsing der Polyimidharzschicht mit einer Dicke von 5 M wird die Plasmaätzung 10 Minuten lang unter einem Plasma durchgefüfart, dessen Abgabe Og7 kW ist und das unter einem Sauerstoffdruck von 0,6 Torr und mit einer Fließgeschwindigkeit von 3 l/min erzeugt wird. Die Ätzungszeit wird eingestellt, indem die Fl.ießgeschwindigkeit des SauerstoffB9 der Sauerstoffdruek und/oder die Energiethe third metal layer 27 with the first metal layer and the fourth metal layer 30 with the second metal layer 29 in contact 9 are produced in the polymer resin layer through holes by adding a metal layer 33 with openings 34 and 35 at corresponding parts of the surface of the polymer resin layer 24 erstsn and third metal, layer 26 is formed and 29 and by the under the openings 34 and 35 exposed Polymerhsrzschicht Wirde etched plasma by an oxygen, to Wegätzsing the polyimide resin layer having a thickness of 5 M plasma etching is 10 minutes durchgefüfart under a plasma , the output of which is Og7 kW and which is generated under an oxygen pressure of 0.6 Torr and at a flow rate of 3 l / min. The etching time is set by changing the flow rate of the oxygen B 9, the oxygen pressure and / or the energy
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23523232352323
der auf den Sauerstoff ausgeübten Hochfrequenz entsprechend eingestellt werden.adjusted according to the high frequency exerted on the oxygen.
Es ist vorzuziehen, daß die Metallschicht 53,die zur Verhinderung der Ätzung der PoXymerharzschicht 24 verwendet wird, eine kleinere Dicke hat als die erste und die dritte Metallschicht 26 und 29 oder daß sie aus einem Material besteht, welches durch eine andere Lösung angeätzt wird als sie zum Ätzen der ersten und dritten Metallschicht 26 und 29 verwendet wird. Bei dieser Ausführungsform bestehen die erste und dritte Metallschicht 26 und 29 aus Aluminium mit einer Dicke von 1 /U. Die Metallschicht 33 besteht aus Aluminium mit einer Dicke von 0,4 λι. Auf diese Weise wird die Metallschicht 33 entfernt, wobei die erste und die dritte Schicht 26 und 29 mit einer genügenden Dicke zurückbleiben.It is preferable that the metal layer 53 used for prevention the etching of the polymer resin layer 24 is used, has a smaller thickness than the first and third metal layers 26 and 29 or that it consists of a material which is etched by a different solution than that used to etch the first and third metal layers 26 and 29 will. In this embodiment, the first and third metal layers 26 and 29 are made of aluminum with a Thickness of 1 / rev. The metal layer 33 consists of aluminum with a thickness of 0.4 λι. In this way the metal layer becomes 33 is removed, leaving the first and third layers 26 and 29 of sufficient thickness.
Die zweite und die vierte Metallschicht 27 und 29 bestehen aus Al. Sie werden gebildet. Indem Al In den durchgehenden Löchern und an der Oberfläche der Polymerharzschicht 24 verdampft wird und indem das verdampfte Al In einem vorgewählten Muster geätzt wird. Es tritt jedoch gelegentlich die Erscheinung auf, daß Al an den Seitenwänden der durchgehenden Löcher nicht verdampft wird. Zur Vermeidung dieser Erscheinung ist es vorzuziehen, den Halbleiterkörper 20 während der Verdampfung des Al rotieren zu lassen.The second and fourth metal layers 27 and 29 are made of Al. You are educated. By having Al In the continuous Holes and evaporated on the surface of the polymer resin layer 24 and by etching the evaporated Al in a preselected pattern. However, the phenomenon occurs occasionally ensure that Al is not evaporated on the side walls of the through holes. To avoid this phenomenon it is preferable to rotate the semiconductor body 20 while the Al is evaporated.
Bei der obengenannten Ausführungsform wird ein Polymerharz mit der folgenden Formel verwendet.In the above embodiment, a polymer resin represented by the following formula is used.
.CO.CO
coco·coco
■ 409b18/039?■ 409b18 / 039?
In Fig. 3 wird im Querschnitt eine weitere Ausführungsform der vorliegenden Erfindung gezeigt, bei welcher eine stärkere Haftung zwischen der SiO2-Schicht und der Polymerharzschicht vorliegt als bei der Ausführungsform der Fig. 2. In Fig. 3 werden die gleichen Bezugszeichen wie in Fig. 2 verwendet.In FIG. 3, a further embodiment of the present invention is shown in cross section, in which there is stronger adhesion between the SiO 2 layer and the polymer resin layer than in the embodiment of FIG. 2. In FIG. 3, the same reference numerals as in FIG 2 used.
Bei der Ausführungsform gemäß Fig. 3 ist zwischen der SiO2-Schicht 23 und der Polymerharzschicht 24 eine Schicht 36 aus einer organischen Verbindung vorgesehen, die sowohl eine AIkoxysilangruppe für eine chemische Bindung mit einem anorganischen Material als auch eine Amino- oder Epoxygruppe für eine chemische Bindung mit der Polymerharzschicht enthält, wodurch die Polymerharzschicht 24 und die SiO2-Schicht 23 durch feste chemische Bindungen verbunden werden.In the embodiment according to FIG. 3, a layer 36 of an organic compound is provided between the SiO 2 layer 23 and the polymer resin layer 24, which contains both an alkoxysilane group for a chemical bond with an inorganic material and an amino or epoxy group for a chemical one Contains bond with the polymer resin layer, whereby the polymer resin layer 24 and the SiO 2 layer 23 are connected by strong chemical bonds.
Die Schicht 36 aus der Amino-Silan-Verbindung kann in der unten beschriebenen Weise gebildet werden. Der Halbleiterkörper 20 mit der aufgebrachten SiO2-Schicht 23 wird in eine" Isopropylalkohollösung eingetauchtp die 1 Gew.% N-ß-(Aminoäthyl)-yaminopropyl-methyldimethoxy-silan enthält«. Auf diese Weise wird bewirkt, daß an der Oberfläche der SlO^-Schicht die Amino-Silan-Verbindung adsorbiert wird«The amino-silane compound layer 36 can be formed in the manner described below. The semiconductor body 20 with the applied SiO 2 layer 23 is immersed in an "isopropyl alcohol solution which contains 1% by weight of N-β- (aminoethyl) -yaminopropyl-methyldimethoxysilane." In this way, the surface of the SLO ^ Layer the amino-silane compound is adsorbed «
Die Schicht 36 der Amino-Silan-Verbindung zur Kupplung der SiOp-Schicht und der Polyimidharzschicht kann unter Verwendung eines Amino-Silan-Kupplungsmittels mit dem Warenzeichen 11KBM 602" von Shin-etsu Chemical Industry Corp. gebildet werden. Das Amino-Silan-Kupplungsmittel wird in einem geeigneten Lösungsmittel wie Wasser»Keton, Äther und Alkohol aufgelöst, um eine Lösung mit geeigneter Konzentration, z.B. 0,05 bis 20 Gew.%, herzustellen. Sodann wird der Halbleiterkörper mit der darauf befindlichen SiQp-Schicht in die Lösung eingetaucht oder man geht so vor, daß man die Lösung auf die Oberfläche der SiO2-Schicht aufbringt. Hierauf wird der Halbleiterkörper 30 Minuten bei 1000C getrockneteThe amino-silane compound layer 36 for coupling the SiOp layer and the polyimide resin layer can be formed using an amino-silane coupling agent with the trademark 11 KBM 602 "from Shin-etsu Chemical Industry Corp. The amino-silane Coupling agent is dissolved in a suitable solvent such as water, ketone, ether and alcohol in order to produce a solution with a suitable concentration, for example 0.05 to 20% by weight. The semiconductor body with the SiQp layer on it is then immersed in the solution or the procedure is such that the solution is applied to the surface of the SiO 2 layer, whereupon the semiconductor body is dried at 100 ° C. for 30 minutes
4098 18/08974098 18/0897
Nach der Bildung der Amino-Silan-Verbindung auf der SiOp-Schicht werden nach den Maßnahmen, wie sie bei der Ausführungsform gemäß Fig. 2 verwendet wurden, die Polymerharzschicht 24, die zweite und die vierte Metallschicht und die Drähte gebildet.After the formation of the amino-silane compound on the SiOp layer are after the measures as they were used in the embodiment according to FIG. 2, the polymer resin layer 24, the second and fourth metal layers and wires are formed.
Die Fig. 4 zeigt eine weitere Ausführungsform der vorliegenden Erfindung, worin die Bezugszeichen die gleichen Bedeutungen wie in Fig. 3 haben.Fig. 4 shows a further embodiment of the present invention, in which the reference numerals have the same meanings as in Fig. 3 have.
Bei dieser Ausführungsform wird als Basis-Elektrode 25 oder als Sender-Elektrode 28 nur eine Metallschicht verwendet.In this embodiment, only a metal layer is used as the base electrode 25 or as the transmitter electrode 28.
Dieser Transistor wird auf folgende Weise hergestellt:This transistor is made in the following way:
Auf die Oberfläche des Halbleiterkörpers 20, auf dem der Kollektor 20, die Basis 21 und der Sender 22 des Transistors angeordnet sind, wird .nach der herkömmlichen Methode, beispielsweise durch thermische Oxydation oder durch chemische Dampfabscheidung, die SK^-Schicht 23 gebildet. Sodann wird eine Schicht 36 einer Amino-Silan-Verbindung gebildet, wozu, wie oben beschrieben, M-ß«{Ämiiioäthyl)°y-aminopropyl-methyldimethoxy-silan verwendet wird. Sodann wird auf der Amino-Silan-Verbindung 36 in. folgender Weise eine Polyimidharzschicht 24 gebildet. Eine Präpolymerlösung eines Polyimidharzes wird auf die Schicht 36 der Amino-Silan-Verbindung aufgebracht, bei 1000C getrocknet und 1 Stunde zur Härtung auf 300°C erhitzt. Die Polyimidharzschicht 24 wird mit einer Dicke von 8/u gebildet. Auf der Polyimidharzschicht 24 wird eine Metallschicht 33 aus Al mit Öffnungen 34 und 35 an Teilen gebildet, die den Teilen der Basisgegend 21 und der Sendergegend 22 entsprechen (Fig. 4a). Die Polyimidharzschicht 24 und die Schicht 36 der Amino-Silan-Verbindung unter den öffnungen 34 und 35 werden selektiv durch ein Plasma geätzt. Die SiO2-Schicht, welche den öffnungen 34 und 35 entspricht, wird durch die bekannten Ätzlösungen geätzt, beispielsweise durch eine Mischlösung aus Flußsäure und Ammoniumfluorid, wodurch durchgehende Löcher und 38 gebildet werden, welche Teile der Basisgegend 21 undOn the surface of the semiconductor body 20, on which the collector 20, the base 21 and the transmitter 22 of the transistor are arranged, the SK ^ layer 23 is formed according to the conventional method, for example by thermal oxidation or by chemical vapor deposition. Then a layer 36 of an amino-silane compound is formed, for which, as described above, M-β «{Ämiiioäthyl) ° γ-aminopropyl-methyldimethoxysilane is used. Then, a polyimide resin layer 24 is formed on the amino-silane compound 36 in the following manner. A prepolymer solution of a polyimide resin is applied to the layer 36 of the amino silane compound, dried at 100 0 C and heated for 1 hour to cure at 300 ° C. The polyimide resin layer 24 is formed with a thickness of 8 / µ. On the polyimide resin layer 24, a metal layer 33 made of Al with openings 34 and 35 is formed at parts corresponding to the parts of the base region 21 and the transmitter region 22 (FIG. 4a). The polyimide resin layer 24 and the amino-silane compound layer 36 under the openings 34 and 35 are selectively etched by a plasma. The SiO 2 layer, which corresponds to the openings 34 and 35, is etched by the known etching solutions, for example by a mixed solution of hydrofluoric acid and ammonium fluoride, whereby through holes 38 and 38 are formed, which are parts of the base region 21 and
409818/0897409818/0897
der Sendergegend 22 erreichen. Nach dem Wegätzen der Metallschicht 33 (Fig. 4b) wird eine Basis-Elektrode 25 und eine Sender-Elektrode 28 aus Al gebildet, indem Al aufgestäubt wird und das aufgestäubte Al so geätzt wird, daß ein vorgewähltes Muster erzielt wird. Sodann werden Drähte 31 und 32 auf die Basis-Elektrode 25 bzw. die Sender-Elektrode 28 durch eine thermische Kompressionsbindung oder eine Ultraschallbindung angeheftet.reach the transmitter area 22. After the metal layer 33 (Fig. 4b) has been etched away, a base electrode 25 and a Transmitter electrode 28 formed from Al by sputtering Al and the sputtered Al is etched so that a preselected pattern is achieved. Then wires 31 and 32 to the base electrode 25 or the transmitter electrode 28 by a thermal compression bond or an ultrasonic bond attached to.
Da die Elektroden 25 und 28 in einer Stufe gebildet werden, ist das Herstellungsverfahren für den in Fig. 4 gezeigten Transistor ähnlich wie für den in Fig. 3 gezeigten Transistor.Since the electrodes 25 and 28 are formed in one step, is the manufacturing process for that shown in FIG Transistor similar to that for the transistor shown in FIG.
Die Figo 5 zeigt eine weitere Ausführungsform der Erfindung, wobei die Bezugszeichen die gleiche Bedeutung haben.FIG. 5 shows a further embodiment of the invention, the reference symbols having the same meaning.
Bei dieser Ausführungsform besteht die Basis-Elektrode 25 aus einem ersten trapezförmigen Metallsteg 39 und einer ersten Metallplatte 41. Die Sender-Elektrode 28 besteht aus einem zweiten trapezförmigen Metallsteg 40 und einer zweiten Metallplatte 42j, wobei eine'Schicht 36 einer organischen Verbindung zwischen dem ersten und dem zweiten trapezförmigen Metallsteg 39 und 40 und der Polymerharzschicht 24 angeordnet ist.In this embodiment, the base electrode 25 is made of a first trapezoidal metal web 39 and a first Metal plate 41. The transmitter electrode 28 consists of a second trapezoidal metal web 40 and a second metal plate 42j, with a layer 36 of an organic compound between the first and the second trapezoidal metal web 39 and 40 and the polymer resin layer 24 is arranged.
Da die Drähte 31 und 32 an die erste und zweite Metallplatte 41 und 42 angeheftet sind, d.h. daß die Drähte an die ebene Oberfläche angeheftet sind, sind die Drähte fest mit den Metallplatten verbunden.Since the wires 31 and 32 to the first and second metal plates 41 and 42 are attached, that is, the wires are attached to the flat surface, the wires are fixed to the metal plates tied together.
Dieser Transistor wird wie folgt hergestellt?This transistor is made like this?
Auf dem Halbleiterkörper 20, auf dem die Transistorelemente des Kollektors 20, der Basis 21 und des Senders 22 angeordnet sinds wird durch eine chemische Dampfabscheidung oder eine thermische Oxydation eine isolierende Schicht 23 aus SiOp gebildete Hierauf xirerden in der SiOp-Schicht' 23 an Teilen durchgehende Löcher vorgesehen.,, welche, den feilen, der "Basis- undOn the semiconductor body 20 on which the transistor elements of the collector 20, the base 21 and the transmitter 22 are arranged s an insulating layer 23 is formed thereon from siop xirerden in the SiOP layer '23 on parts through a chemical vapor deposition or thermal oxidation through holes provided. ,, which, the filing, the "base and
4098 18/0897- - -4098 18 / 0897- - -
der Sendergegenden 21 und 22 entsprechen. Auf der SiOp-Schicht 23 wird eine Schicht mit einer Dicke von 5/u durch Abscheidung von Al gebildet. Die freigelegten Oberflächen der Basis- und Sendergegenden 21 und 22 und die abgeschiedene Al-Schicht mit Ausnahme der abgeschiedenen Teile auf den freigelegten Oberflächen der Basis- und der Sendergegenden 21 und 22 werden geätzt, wodurch, wie in Fig. 5a gezeigt wird, ein erster trapezförmiger Metallsteg 39 und ein zweiter trapezförmiger Metallsteg 40 gebildet werden. Die Schicht 36 der organischen Verbindung des Amino-Silans wird auf den Oberflächen der SiO2-Schicht 23 und der ersten und zweiten trapezförmigen Metallstege 39 und 40 unter Verwendung von N-ß-(Aminoäthyl)-y-aminopropyl-methyldimethoxy-silan gebildet. Auf der Amino-Silan-Schicht 36 wird die Schicht 24 des Polymerharzes aus dem PoIyimidharz mit einer Dicke von 6 ai während der Drehung des resultierenden Halbleiterkörpers gebildet (Fig. 5b). Sodann werden die Polyimidharzschicht 24 und die Amino-Silan-Schicht 36, die auf den Oberflächen der ersten und zweiten trapezförmigen Metallstege 39 und 40 gebildet sind, gleichförmig, wie oben beschrieben, durch ein Sauerstoffplasma geätzt, wodurch die Spitzenoberflächen der trapezförmigen Metallstege 39 und 40 freigelegt werden (Fig. 5c). Auf der geätzten Oberfläche der Polyimidharzschicht 24 und den freigelegten Oberflächen der trapezförmigen Metallstege 39 und 40 wird eine Al-Schicht gebildet, indem Al abgeschieden wird. Die Al-Schicht wird nach den bekannten Ätztechniken geätzt, wodurch eine erste Metallplatte 41 und eine zweite Metallplatte 42 hergestellt werden. Hierauf werden an die Metallplatten 41 und 42 Drähte 31 und 32 angeheftet, wodurch der in Fig. 4 gezeigte Transistor vollständig gebildet wird.the transmitter areas 21 and 22 correspond. A layer with a thickness of 5 / µ is formed on the SiOp layer 23 by depositing Al. The exposed surfaces of the base and transmitter regions 21 and 22 and the deposited Al layer except for the deposited portions on the exposed surfaces of the base and transmitter regions 21 and 22 are etched, whereby, as shown in Fig. 5a, a first trapezoidal metal web 39 and a second trapezoidal metal web 40 are formed. The layer 36 of the organic compound of the amino-silane is formed on the surfaces of the SiO 2 layer 23 and the first and second trapezoidal metal webs 39 and 40 using N-β- (aminoethyl) -y-aminopropyl-methyldimethoxysilane. On the amino-silane layer 36, the layer 24 of the polymer resin is formed from the polyimide resin with a thickness of 6 ai during the rotation of the resulting semiconductor body (FIG. 5b). Then, the polyimide resin layer 24 and the amino-silane layer 36 formed on the surfaces of the first and second trapezoidal metal ridges 39 and 40 are uniformly etched as described above by an oxygen plasma, whereby the tip surfaces of the trapezoidal metal ridges 39 and 40 are exposed (Fig. 5c). An Al layer is formed on the etched surface of the polyimide resin layer 24 and the exposed surfaces of the trapezoidal metal bars 39 and 40 by depositing Al. The Al layer is etched using the known etching techniques, whereby a first metal plate 41 and a second metal plate 42 are produced. Then wires 31 and 32 are attached to the metal plates 41 and 42, whereby the transistor shown in Fig. 4 is completely formed.
Bei dieser Ausführungsform wird bevorzugt, daß die Polymerharzschicht 24 so gebildet wird, daß die Dicke der Polymerharzschicht größer ist als diejenige der trapezförmigen Metallstege 39 und 40, damit leicht ebene Oberflächen der Metallplatten 41 und 42 gebildet werden können. In this embodiment, it is preferred that the polymer resin layer 24 is formed so that the thickness of the polymer resin layer is greater than that of the trapezoidal metal webs 39 and 40 so that flat surfaces of the metal plates 41 and 42 can be easily formed.
/· 0 °- H 1 R / π H Pl 1 / · 0 ° - H 1 R / π H Pl 1
H1 U t>- U s U / J U y 'J H 1 U t> - U s U / JU y 'J
In den oben beschriebenen Ausführungsformen wurde zwar zur Herstellung der Polymerharzschicht ein Polyimidharz verwendet, doch können naturgemäß, wie oben beschrieben, alle beliebigen Polymerharze dazu verwendet werden, um die Polymerharzschicht auszubilden.In the embodiments described above, although a polyimide resin was used to form the polymer resin layer, however, of course, as described above, any desired polymer resins can be used to form the polymer resin layer to train.
Somit können anstelle des Polyimidharzes mit der folgenden FormelThus, instead of the polyimide resin having the following formula
Polyimidharze mit der folgenden allgemeinen Formel verwendet werdenPolyimide resins having the following general formula can be used
undand
Darin leiten sich die Reste Ar^, tischen Verbindungen ab.This is where the residues Ar ^, table connections.
,, Ar, und Ar^ von aroma-,, Ar, and Ar ^ of aroma-
Es wird bevorzugt, daß die Reste Ar^ und Ar·, aus folgenden Resten ausgewählt werden:It is preferred that the radicals Ar ^ and Ar ·, from the following Leftovers are selected:
409818/0897409818/0897
(a) O * Benzolring(a) O * benzene ring
(b) ζΛο-jy Diphenylätherring(b) ζΛο-jy diphenyl ether ring
(c) OO Naphthalinring(c) OO naphthalene ring
(d) 0**.Λ·^ Diphenyl sulf ciir ing(d) 0 **. Λ ^ Diphenyl sulf ciir ing
jrjf Ηζβ Di- (phenoxypkenyl) - sulf onringjrjf Ηζβ di (phenoxypkenyl) sulfone ring
und daß die Reste Ar2 und Ar^ aus den folgenden Resten ausgewählt v/erden sand that the radicals Ar 2 and Ar 1 are selected from the following radicals
Benzolrini
(b)Benzene rini
(b)
Am meiste«, wird bevorzugt, womi in der öligen Formel (1) der lest Ar,, sin ki] uy Diphenylätharring uad der- Reat Ar0 einMost of the time, it is preferred that in oily formula (1) the reads Ar ,, sin ki] uy diphenyl ether ring and the reate Ar 0
Bensolring ist, u&d ü&B in der F©r®el (2) der RestBensolring is, u & d ü & B in the F © r®el (2) the rest
ein ffjf Γθ) Diphenylätherring ρ der Eegt Ar5, der (O) Ben-a ffjf Γθ) diphenyl ether ring ρ of Eegt Ar 5 , the (O) Ben-
g der Rest Ar^ der {Tjj! ^^ Diphenylätherring und derg the remainder Ar ^ der {Tjj! ^^ diphenyl ether ring and the
Rest Ar^ der U^ Jtj} Benzophenonring ist.Remainder Ar ^ is the U ^ Jtj} benzophenone ring.
COCO
Die Polyimidharzschicht wurde bei den vorstehend beschriebenen Ausführungsformen durch physikalische Techniken, beispielsweise durch ein Sauerstoffplasma, geätzt» Es können aber auch chemische Techniken dazu herangezogen werden s um die Polyimid-The polyimide resin was etched in the above embodiments by physical techniques, such as by an oxygen plasma, "but it is also chemical techniques are used to see the polyimide
409818/U897409818 / U897
harzsehicht zu ätzen« Wenn 2.,Bo die Polylmidlösung auf die SiOp-= Schicht oder die Schicht der organischen Verbindung aufgebracht und 1 Stunde auf 16O°C erhitzt worden ist, dann itfird das Lösungsmittel in der Polyimidlösung verdampft5 so daß'sich das Polyimid im halbgehärteten Stadium befindet= In diesem Stadium werden Teile des Polyimids im halbgehärteten Stadium mit einer wäßrigen Hydrazinlösung von 40 bis 80% in Berührung gebracht j, xtfodurch das Polyimid im halbgehärteten Stadium leicht entfernt wird» Sodann s wenn eine einstündige Wärmebe- . handlung bei 200°C und eine daran anschließende einstündige Wärmebehandlung bei 3000C durchgeführt werden, wird das PoIyizaid in einen polymeren Zustand überführt 9 wodurch eine stab-MIe Polyimidharzschicht gebildet wird» die für die Zwecke der Erfindung geeignet ist„ Somit können für die Zwecke der Erfindung auch chemische Techniken verwendet werden, um die Polyimidharzschicht zu ätzen=Resin layer to be etched If 2., Bo the polyimide solution has been applied to the SiOp- = layer or the layer of the organic compound and heated to 160 ° C for 1 hour, then the solvent in the polyimide solution evaporates 5 so that the polyimide becomes is in the semi-cured stage = at this stage, the polyimide parts are brought in the semi-cured stage with an aqueous hydrazine solution of 40 to 80% into contact j, xtfodurch the polyimide in the semi-cured stage is easily removed "Then, when a one-hour s Wärmebe-. treatment at 200 ° C and a subsequent one-hour heat treatment carried out at 300 0 C, which PoIyizaid is transferred to a polymeric state 9 whereby a rod-MIE polyimide resin layer is formed is suitable "for the purposes of the invention" Thus, for the purposes The invention also uses chemical techniques to etch the polyimide resin layer =
Das zur Herstellung der Elektroden geeignete Metall ist nicht auf AIg wie in den Ausführungsformen 9 begrenzts vielmehr können auch andere Materialien wie Ti2 Mo8 Au, Ag9 Cu, Cr s Pt sowie Kombinationen daraus und Legierungen davon verwendet"werden.The appropriate for producing the electrode metal is not limited as AIG s limited to the embodiments 9 but may include other materials such as Ti 2 Mo 8 Au, Ag 9 Cu, Cr s Pt and combinations thereof and alloys thereof "may be used.
Obgleich weiterhin bei den oben beschriebenen Ausführungsformen die Polymerharzschicht eine Dicke von 5 oder 8/u hatte, ist die Dicke der Polymerharzschicht nicht auf diese Werte begrenzt, sondern beträgt etwa 2 bis 15 /u. Zur Aufrechterhaltung der mechanischen Festigkeit der Polymeriiarzschicht bei der Anhaftung der Drähte an den Elektroden ist eine Dicke von 2/u der Polymerharzschicht erforderlich. Zur Bildung von durchgehenden Löchern für die Elektroden wird eine Dicke der Polymerharz schicht von 15/U bevorzugt.Furthermore, although the polymer resin layer had a thickness of 5 or 8 / u in the above-described embodiments, the thickness of the polymer resin layer is not limited to these values, but is about 2 to 15 / u. In order to maintain the mechanical strength of the polymer resin layer when the wires adhere to the electrodes, a thickness of 2 / µ of the polymer resin layer is required. To form through holes for the electrodes, a thickness of the polymer resin layer of 15 / U is preferred.
Entsprechende Untersuchungen haben weiterhin gezeigt, daß - wie aus Fig» β ersichtlich wird - eine Dicke der Polymerharzschicht von etwa 3 bis 10yu bevorzugt wird*Corresponding investigations have furthermore shown that - as can be seen from FIG. 3 - a thickness of the polymer resin layer from about 3 to 10yu is preferred *
4098 18/08374098 18/0837
Fig. 6 zeigt die Beziehung zwischen der Dicke der Polymerliarzschicht und der Bindungsausbeute. Wie aus der Fig. 6 ersichtlich wird, wird, wenn die Dicke der Polymerharzschicht etwa 2yu beträgt, die Bindungsausbeute etwa 50%. Wenn die Dicke der Polymerharzschicht etwa 5/U beträgt, dann wird die Bindungsausbeute etwa 100%. Diese Zunahme in der Bindungsausbeute ist sehr wichtig im Hinblick auf die vollautomatisierte Massenproduktion -der Halbleitervorrichtungen.Fig. 6 shows the relationship between the thickness of the polymer resin layer and the binding yield. As can be seen from Fig. 6, when the thickness of the polymer resin layer is about 2yu, the binding yield is about 50%. If the The thickness of the polymer resin layer is about 5 / U, then the Binding yield about 100%. This increase in the binding yield is very important in view of the fully automated mass production of semiconductor devices.
■gleich weiterhin in den Ausführungsformen zur Steigerung der Haftung zwischen der Polyimidharzschicht und der SiQp-Schicht eine Amino-Silan-Verbindimg verwendet wurde, können zur Steigerung der Haftung zwischen einem Polymerharz des Epoxytyps und der SiQ^-Schicht Epoxysilanverbindungen wie ß-(3j4-Epoxycyclohexyl)-äthyl-trimethoxy-silan und γ-Glycidoxypropyl-trimethoxy-silan verwendet werden.■ the same continues in the embodiments to increase the adhesion between the polyimide resin layer and the SiQp layer an amino-silane compound was used to increase the adhesion between a polymer resin of the epoxy type and the SiQ ^ layer epoxysilane compounds such as ß- (3j4-epoxycyclohexyl) -ethyl-trimethoxy-silane and γ-glycidoxypropyl-trimethoxy-silane be used.
S "J 'ς Ö / |"i ti ΓΙS "J 'ς Ö / |" i ti ΓΙ
ο ί o/Ubdο ί o / Ubd
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10358872 | 1972-10-18 | ||
JP47103588A JPS5131185B2 (en) | 1972-10-18 | 1972-10-18 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2352329A1 true DE2352329A1 (en) | 1974-05-02 |
DE2352329B2 DE2352329B2 (en) | 1977-02-24 |
DE2352329C3 DE2352329C3 (en) | 1977-10-06 |
Family
ID=
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4338432B4 (en) * | 1992-11-11 | 2009-01-02 | Mitsubishi Denki K.K. | Semiconductor integrated circuit package, manufacturing method therefor, and assembly method therefor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4338432B4 (en) * | 1992-11-11 | 2009-01-02 | Mitsubishi Denki K.K. | Semiconductor integrated circuit package, manufacturing method therefor, and assembly method therefor |
Also Published As
Publication number | Publication date |
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FR2209218A1 (en) | 1974-06-28 |
NL163368C (en) | 1980-08-15 |
JPS5131185B2 (en) | 1976-09-04 |
HK29979A (en) | 1979-05-18 |
JPS4962081A (en) | 1974-06-15 |
NL163368B (en) | 1980-03-17 |
NL7314375A (en) | 1974-04-22 |
MY7900031A (en) | 1979-12-31 |
DE2352329B2 (en) | 1977-02-24 |
FR2209218B1 (en) | 1978-05-26 |
GB1414245A (en) | 1975-11-19 |
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Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN |