GB1400040A - Field effect transistor having two gates for functioning at extremely high frequencies - Google Patents

Field effect transistor having two gates for functioning at extremely high frequencies

Info

Publication number
GB1400040A
GB1400040A GB4976572A GB4976572A GB1400040A GB 1400040 A GB1400040 A GB 1400040A GB 4976572 A GB4976572 A GB 4976572A GB 4976572 A GB4976572 A GB 4976572A GB 1400040 A GB1400040 A GB 1400040A
Authority
GB
United Kingdom
Prior art keywords
layer
field effect
effect transistor
trench
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4976572A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1400040A publication Critical patent/GB1400040A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB4976572A 1971-10-29 1972-10-27 Field effect transistor having two gates for functioning at extremely high frequencies Expired GB1400040A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7139034A FR2157740B1 (enExample) 1971-10-29 1971-10-29

Publications (1)

Publication Number Publication Date
GB1400040A true GB1400040A (en) 1975-07-16

Family

ID=9085120

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4976572A Expired GB1400040A (en) 1971-10-29 1972-10-27 Field effect transistor having two gates for functioning at extremely high frequencies

Country Status (5)

Country Link
US (1) US3805129A (enExample)
JP (1) JPS4852483A (enExample)
DE (1) DE2252868A1 (enExample)
FR (1) FR2157740B1 (enExample)
GB (1) GB1400040A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294544A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus
JPS51112184A (en) * 1975-02-26 1976-10-04 Nec Corp Shottky barrier layer gate type twine gates field-effect transistor an d its making
JPS52122089A (en) * 1975-07-31 1977-10-13 Handotai Kenkyu Shinkokai Semiconductor device
US4104673A (en) * 1977-02-07 1978-08-01 Westinghouse Electric Corp. Field effect pentode transistor
JPS5548974A (en) * 1978-10-02 1980-04-08 Fujitsu Ltd Electric-field-effective type transistor
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
US4268952A (en) * 1979-04-09 1981-05-26 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration
JPS58223373A (ja) * 1982-06-21 1983-12-24 Nec Corp デユアルゲ−ト型電界効果トランジスタ
JPS6024073A (ja) * 1983-11-25 1985-02-06 Nec Corp 双ゲ−ト・シヨツトキ障壁ゲ−ト型電界効果トランジスタ
US5886382A (en) * 1997-07-18 1999-03-23 Motorola, Inc. Trench transistor structure comprising at least two vertical transistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
FR1546644A (fr) * 1966-09-19 1968-11-22 Matsushita Electronics Corp Dispositif semi-conducteur
US3678573A (en) * 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor

Also Published As

Publication number Publication date
US3805129A (en) 1974-04-16
DE2252868A1 (de) 1973-05-03
JPS4852483A (enExample) 1973-07-23
FR2157740B1 (enExample) 1976-10-29
FR2157740A1 (enExample) 1973-06-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee