FR2157740A1 - - Google Patents

Info

Publication number
FR2157740A1
FR2157740A1 FR7139034A FR7139034A FR2157740A1 FR 2157740 A1 FR2157740 A1 FR 2157740A1 FR 7139034 A FR7139034 A FR 7139034A FR 7139034 A FR7139034 A FR 7139034A FR 2157740 A1 FR2157740 A1 FR 2157740A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7139034A
Other languages
French (fr)
Other versions
FR2157740B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7139034A priority Critical patent/FR2157740B1/fr
Priority to US00297394A priority patent/US3805129A/en
Priority to GB4976572A priority patent/GB1400040A/en
Priority to DE2252868A priority patent/DE2252868A1/de
Priority to JP47108042A priority patent/JPS4852483A/ja
Publication of FR2157740A1 publication Critical patent/FR2157740A1/fr
Application granted granted Critical
Publication of FR2157740B1 publication Critical patent/FR2157740B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
FR7139034A 1971-10-29 1971-10-29 Expired FR2157740B1 (enExample)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7139034A FR2157740B1 (enExample) 1971-10-29 1971-10-29
US00297394A US3805129A (en) 1971-10-29 1972-10-13 Field effect transistor having two gates for functioning at extremely high frequencies
GB4976572A GB1400040A (en) 1971-10-29 1972-10-27 Field effect transistor having two gates for functioning at extremely high frequencies
DE2252868A DE2252868A1 (de) 1971-10-29 1972-10-27 Feldeffekttransistor mit zwei steuerelektroden fuer betrieb bei sehr hohen frequenzen
JP47108042A JPS4852483A (enExample) 1971-10-29 1972-10-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7139034A FR2157740B1 (enExample) 1971-10-29 1971-10-29

Publications (2)

Publication Number Publication Date
FR2157740A1 true FR2157740A1 (enExample) 1973-06-08
FR2157740B1 FR2157740B1 (enExample) 1976-10-29

Family

ID=9085120

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7139034A Expired FR2157740B1 (enExample) 1971-10-29 1971-10-29

Country Status (5)

Country Link
US (1) US3805129A (enExample)
JP (1) JPS4852483A (enExample)
DE (1) DE2252868A1 (enExample)
FR (1) FR2157740B1 (enExample)
GB (1) GB1400040A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016968A1 (en) * 1979-04-09 1980-10-15 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2294544A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus
JPS51112184A (en) * 1975-02-26 1976-10-04 Nec Corp Shottky barrier layer gate type twine gates field-effect transistor an d its making
JPS52122089A (en) * 1975-07-31 1977-10-13 Handotai Kenkyu Shinkokai Semiconductor device
US4104673A (en) * 1977-02-07 1978-08-01 Westinghouse Electric Corp. Field effect pentode transistor
JPS5548974A (en) * 1978-10-02 1980-04-08 Fujitsu Ltd Electric-field-effective type transistor
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
JPS58223373A (ja) * 1982-06-21 1983-12-24 Nec Corp デユアルゲ−ト型電界効果トランジスタ
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
JPS6024073A (ja) * 1983-11-25 1985-02-06 Nec Corp 双ゲ−ト・シヨツトキ障壁ゲ−ト型電界効果トランジスタ
US5886382A (en) * 1997-07-18 1999-03-23 Motorola, Inc. Trench transistor structure comprising at least two vertical transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1546644A (fr) * 1966-09-19 1968-11-22 Matsushita Electronics Corp Dispositif semi-conducteur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
US3678573A (en) * 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1546644A (fr) * 1966-09-19 1968-11-22 Matsushita Electronics Corp Dispositif semi-conducteur

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE BRITANNIQUE "ELECTRONICS LETTERS", VOLUME 6, NO 8, 16 AVRIL 1970 "HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS". K.E.DRANGEID ET AL PAGES 228-229) *
REVUE AMERICAINE "I.B.M. TECHNICAL DISCLOSURE BULLETIN", VOLUME 14, NO 4, SEPTEMBRE1971 "GAAS FIELD-EFFECT TRANSISTORS WITH SELF-REGISTERED GATES". W.P. DUMKE ET AL, PAGES 1248-1249 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016968A1 (en) * 1979-04-09 1980-10-15 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

Also Published As

Publication number Publication date
US3805129A (en) 1974-04-16
DE2252868A1 (de) 1973-05-03
JPS4852483A (enExample) 1973-07-23
FR2157740B1 (enExample) 1976-10-29
GB1400040A (en) 1975-07-16

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Legal Events

Date Code Title Description
ST Notification of lapse