GB1385982A - Method of producing a silica coating from an organic resin - Google Patents
Method of producing a silica coating from an organic resinInfo
- Publication number
- GB1385982A GB1385982A GB3059372A GB3059372A GB1385982A GB 1385982 A GB1385982 A GB 1385982A GB 3059372 A GB3059372 A GB 3059372A GB 3059372 A GB3059372 A GB 3059372A GB 1385982 A GB1385982 A GB 1385982A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- resin
- polyvinylsilane
- june
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000011347 resin Substances 0.000 title abstract 4
- 229920005989 resin Polymers 0.000 title abstract 4
- 238000000576 coating method Methods 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title abstract 2
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000000443 aerosol Substances 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 230000007062 hydrolysis Effects 0.000 abstract 1
- 238000006460 hydrolysis reaction Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 150000001364 polyalkylsilanes Polymers 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- -1 polyvinylsiloxane Polymers 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
- 239000005050 vinyl trichlorosilane Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7123624A FR2144024A5 (enrdf_load_stackoverflow) | 1971-06-29 | 1971-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1385982A true GB1385982A (en) | 1975-03-05 |
Family
ID=9079476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3059372A Expired GB1385982A (en) | 1971-06-29 | 1972-06-29 | Method of producing a silica coating from an organic resin |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2231912C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2144024A5 (enrdf_load_stackoverflow) |
| GB (1) | GB1385982A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112410956A (zh) * | 2020-11-13 | 2021-02-26 | 浙江汇隆新材料股份有限公司 | 一种色纺高f扁平涤纶长丝的制备方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3334095A1 (de) * | 1983-09-21 | 1985-04-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum aetzen tiefer graeben in siliziumscheiben mit glatter oberflaeche |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3679497A (en) * | 1969-10-24 | 1972-07-25 | Westinghouse Electric Corp | Electron beam fabrication system and process for use thereof |
-
1971
- 1971-06-29 FR FR7123624A patent/FR2144024A5/fr not_active Expired
-
1972
- 1972-06-29 GB GB3059372A patent/GB1385982A/en not_active Expired
- 1972-06-29 DE DE2231912A patent/DE2231912C2/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112410956A (zh) * | 2020-11-13 | 2021-02-26 | 浙江汇隆新材料股份有限公司 | 一种色纺高f扁平涤纶长丝的制备方法 |
| CN112410956B (zh) * | 2020-11-13 | 2023-09-15 | 浙江汇隆新材料股份有限公司 | 一种色纺高f扁平涤纶长丝的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2144024A5 (enrdf_load_stackoverflow) | 1973-02-09 |
| DE2231912C2 (de) | 1986-01-30 |
| DE2231912A1 (de) | 1973-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4086128A (en) | Process for roughening surface of epoxy resin | |
| GB1440979A (en) | Process for the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides | |
| ATE13202T1 (de) | Verfahren zur herstellung amorpher siliziumfilme. | |
| GB1451623A (en) | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate | |
| JPS5540743A (en) | Surface treatment of polycarbonate resin molded article | |
| US4041190A (en) | Method for producing a silica mask on a semiconductor substrate | |
| WO2001031687A3 (en) | Pyrochlore thin films and process for making | |
| GB1385982A (en) | Method of producing a silica coating from an organic resin | |
| JPS55106234A (en) | Surface metallizing method of resin product and modified resin used therefor | |
| JPS5710231A (en) | Manufacture of semiconductor device | |
| JPS53147549A (en) | Forming method of antireflection film | |
| JPS553863A (en) | Treating method of prime coat by gas softening nitriding | |
| JPS5256869A (en) | Production of semiconductor element | |
| JPS5258743A (en) | Method for corrosionproof coating | |
| ES379361A1 (es) | Procedimiento para la preparacion de estructuras planas a partir de compuestos polihidroxilicos. | |
| JPS5425941A (en) | Ultraviolet curing film-forming composition | |
| JPS5247828A (en) | Method for coating with slurry powder paint | |
| JPS54109772A (en) | Resist coating method | |
| JPS5237942A (en) | Method for coating with an organic solvent type high-solid paint | |
| JPS5474677A (en) | Surface stabilizing method of semiconcuctor element using polyimide silicone | |
| JPS574272A (en) | Formation of unpainted part on surface of substrate | |
| JPS57171471A (en) | Paint film-forming method | |
| JPS52146791A (en) | Anti-clouding paint film and process thereof | |
| JPS5765728A (en) | Surface treatment for molded article of synthetic resin | |
| JPS5246775A (en) | Method of forming photo mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |