GB1385982A - Method of producing a silica coating from an organic resin - Google Patents

Method of producing a silica coating from an organic resin

Info

Publication number
GB1385982A
GB1385982A GB3059372A GB3059372A GB1385982A GB 1385982 A GB1385982 A GB 1385982A GB 3059372 A GB3059372 A GB 3059372A GB 3059372 A GB3059372 A GB 3059372A GB 1385982 A GB1385982 A GB 1385982A
Authority
GB
United Kingdom
Prior art keywords
substrate
resin
polyvinylsilane
june
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3059372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1385982A publication Critical patent/GB1385982A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

1385982 Silica coatings THOMSON-CSF 29 June 1972 [29 June 1971] 30593/72 Heading ClA [Also in Divisions H1 and C3] A patterned SiO 2 coating is applied to a substrate by depositing thereon a thin film of resin polymer of formula (R.SiO 3 H) wherein R is an organic radical, irradiating with electrons to define the required pattern, and thermally treating the substrate in an oxidant atmosphere of, e.g., O 2 +N 2 or Ar at 500-1000‹ C. for 2 hours. The resin is preferably a polyalkyl silane using methyl, ethyl, or vinyl radicals; e.g. polyvinylsilane, polyvinylsiloxane, polyvinylsiloxanol and is deposited from solution or aerosol spray on a rotating substrate, electronically bombarded, and treated with solvent or thermal etchant to remove unirradiated parts. Polyvinylsilane may be produced by hydrolysis of vinyl trichlorosilane with water agitated in excess ethyl ether at 0-5‹ C., extraction of unpolymerized resin in ether, polymerization with ammonia, rinsing and drying, and concentration to powder by evaporation in vacuo; after which it is dissolved in a solvent, e.g. isopropyl alcohol, cetane, aromatic carbide, for deposition.
GB3059372A 1971-06-29 1972-06-29 Method of producing a silica coating from an organic resin Expired GB1385982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7123624A FR2144024A5 (en) 1971-06-29 1971-06-29

Publications (1)

Publication Number Publication Date
GB1385982A true GB1385982A (en) 1975-03-05

Family

ID=9079476

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3059372A Expired GB1385982A (en) 1971-06-29 1972-06-29 Method of producing a silica coating from an organic resin

Country Status (3)

Country Link
DE (1) DE2231912C2 (en)
FR (1) FR2144024A5 (en)
GB (1) GB1385982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112410956A (en) * 2020-11-13 2021-02-26 浙江汇隆新材料股份有限公司 Preparation method of color-spun high-F flat polyester filament yarn

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3334095A1 (en) * 1983-09-21 1985-04-11 Brown, Boveri & Cie Ag, 6800 Mannheim Process for etching deep trenches in silicon wafers having a flat surface

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3679497A (en) * 1969-10-24 1972-07-25 Westinghouse Electric Corp Electron beam fabrication system and process for use thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112410956A (en) * 2020-11-13 2021-02-26 浙江汇隆新材料股份有限公司 Preparation method of color-spun high-F flat polyester filament yarn
CN112410956B (en) * 2020-11-13 2023-09-15 浙江汇隆新材料股份有限公司 Preparation method of color-spun high-F flat polyester filaments

Also Published As

Publication number Publication date
DE2231912A1 (en) 1973-01-18
FR2144024A5 (en) 1973-02-09
DE2231912C2 (en) 1986-01-30

Similar Documents

Publication Publication Date Title
US4086128A (en) Process for roughening surface of epoxy resin
GB1440979A (en) Process for the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
DE69614673D1 (en) METHOD FOR PRODUCING THICK CERAMIC FILM BY SOL GEL COATING PROCESS
ATE13202T1 (en) PROCESS FOR THE MANUFACTURE OF AMORPHOUS SILICON FILMS.
JPS52123172A (en) Spin coating method
GB1451623A (en) Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
JPS5620165A (en) Formation of pattern
US4016305A (en) Vacuum deposition method
JPS5540743A (en) Surface treatment of polycarbonate resin molded article
US4041190A (en) Method for producing a silica mask on a semiconductor substrate
GB1385982A (en) Method of producing a silica coating from an organic resin
ES250340A1 (en) Process of coating polypropylene
WO1979000748A1 (en) Photosensitive printing plate
JPS5575429A (en) Surface treatment of vinyl chloride type resin molded article
JPS5349955A (en) Spin coating method
JPS55106234A (en) Surface metallizing method of resin product and modified resin used therefor
GB1241236A (en) Process of coating plastics with organopolysiloxanes and articles made thereby
JPS5710231A (en) Manufacture of semiconductor device
JPS53147549A (en) Forming method of antireflection film
JPS553863A (en) Treating method of prime coat by gas softening nitriding
JPS56150462A (en) Partial coating
JPS5256869A (en) Production of semiconductor element
ES379361A1 (en) Method for manufacturing surface coatings and films and surface coatings and films for carrying out this method
JPS5247828A (en) Method for coating with slurry powder paint
JPS54109772A (en) Resist coating method

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years