GB1385730A - Apparatus for diffusing dopants into semiconductor wafers - Google Patents
Apparatus for diffusing dopants into semiconductor wafersInfo
- Publication number
- GB1385730A GB1385730A GB2730172A GB2730172A GB1385730A GB 1385730 A GB1385730 A GB 1385730A GB 2730172 A GB2730172 A GB 2730172A GB 2730172 A GB2730172 A GB 2730172A GB 1385730 A GB1385730 A GB 1385730A
- Authority
- GB
- United Kingdom
- Prior art keywords
- fixture
- wafers
- grooves
- base
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2133877A DE2133877A1 (de) | 1971-07-07 | 1971-07-07 | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben |
| DE2133876A DE2133876A1 (de) | 1971-07-07 | 1971-07-07 | Anordnung zum eindiffundieren von dotierstoffen |
| DE2133843A DE2133843A1 (de) | 1971-07-07 | 1971-07-07 | Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1385730A true GB1385730A (en) | 1975-02-26 |
Family
ID=27183548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2730172A Expired GB1385730A (en) | 1971-07-07 | 1972-06-12 | Apparatus for diffusing dopants into semiconductor wafers |
Country Status (4)
| Country | Link |
|---|---|
| FR (1) | FR2144678B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1385730A (enrdf_load_stackoverflow) |
| IT (1) | IT962430B (enrdf_load_stackoverflow) |
| NL (1) | NL7206014A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2159328A (en) * | 1984-05-21 | 1985-11-27 | Christopher Frank Mcconnell | Vessel and apparatus for treating wafers with fluids |
| US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
| US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
| US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
| US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
| US6136724A (en) * | 1997-02-18 | 2000-10-24 | Scp Global Technologies | Multiple stage wet processing chamber |
| WO2002003428A3 (en) * | 2000-06-30 | 2002-04-11 | Integrated Materials Inc | Silicon fixtures for supporting wafers during thermal processing and method of fabrication |
| US6450346B1 (en) | 2000-06-30 | 2002-09-17 | Integrated Materials, Inc. | Silicon fixtures for supporting wafers during thermal processing |
| WO2004095545A3 (en) * | 2003-03-28 | 2005-05-12 | Saint Gobain Ceramics | Wafer carrier having improved processing characteristics |
| WO2016156607A1 (de) * | 2015-04-02 | 2016-10-06 | Centrotherm Photovoltaics Ag | Waferboot und plasma-behandlungsvorrichtung für wafer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1502754A (en) * | 1975-12-22 | 1978-03-01 | Siemens Ag | Heat-treatment of semi-conductor wafers |
| JPS5595321A (en) * | 1979-01-12 | 1980-07-19 | Matsushita Electric Ind Co Ltd | Container of semiconductor substrate for liquid-phase epitaxial growth |
| FR2702088B1 (fr) * | 1993-02-24 | 1995-05-24 | Sgs Thomson Microelectronics | Nacelle pour plaquettes de silicium. |
-
1972
- 1972-05-04 NL NL7206014A patent/NL7206014A/xx unknown
- 1972-06-12 GB GB2730172A patent/GB1385730A/en not_active Expired
- 1972-06-21 FR FR7222370A patent/FR2144678B1/fr not_active Expired
- 1972-07-05 IT IT2661572A patent/IT962430B/it active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2159328A (en) * | 1984-05-21 | 1985-11-27 | Christopher Frank Mcconnell | Vessel and apparatus for treating wafers with fluids |
| US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
| US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
| US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
| US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
| US6136724A (en) * | 1997-02-18 | 2000-10-24 | Scp Global Technologies | Multiple stage wet processing chamber |
| WO2002003428A3 (en) * | 2000-06-30 | 2002-04-11 | Integrated Materials Inc | Silicon fixtures for supporting wafers during thermal processing and method of fabrication |
| US6450346B1 (en) | 2000-06-30 | 2002-09-17 | Integrated Materials, Inc. | Silicon fixtures for supporting wafers during thermal processing |
| WO2004095545A3 (en) * | 2003-03-28 | 2005-05-12 | Saint Gobain Ceramics | Wafer carrier having improved processing characteristics |
| WO2016156607A1 (de) * | 2015-04-02 | 2016-10-06 | Centrotherm Photovoltaics Ag | Waferboot und plasma-behandlungsvorrichtung für wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| IT962430B (it) | 1973-12-20 |
| FR2144678B1 (enrdf_load_stackoverflow) | 1975-08-29 |
| FR2144678A1 (enrdf_load_stackoverflow) | 1973-02-16 |
| NL7206014A (enrdf_load_stackoverflow) | 1973-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1385730A (en) | Apparatus for diffusing dopants into semiconductor wafers | |
| US3834349A (en) | Device for holding semiconductor discs during high temperature treatment | |
| US3828726A (en) | Fixture for positioning semiconductor discs in a diffusion furnace | |
| GB1425965A (en) | Method of treating monocrystalline wafers | |
| GB1470614A (en) | Process for deposition of polycrystalline silicon | |
| GB1271035A (en) | Processes for forming semiconductor devices and individual semiconductor bodies from a single wafer | |
| GB1152444A (en) | Heating Element suitable for use in the Epitaxial Deposition of Semiconductor Materials | |
| US4062714A (en) | Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made | |
| GB1473400A (en) | Method for diffusing impurities into nitride semiconductor crystals | |
| GB1051562A (enrdf_load_stackoverflow) | ||
| GB1491255A (en) | Treating slices of material with a gas | |
| DE2960880D1 (en) | Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration | |
| GB1370717A (en) | Susceptors | |
| US3183131A (en) | Semiconductor diffusion method | |
| JPS6466932A (en) | Epitaxial silicon wafer | |
| US3939017A (en) | Process for depositing the deposition agent on the surface of a number of semiconductor substrates | |
| JPS577923A (en) | Manufacture of receiving table for processing single silicon crystal wafer | |
| GB1062284A (en) | Improvements in or relating to processes for the manufacture of layers of semiconductor material | |
| GB1332994A (en) | Method of diffusing an impurity into a semiconductor body | |
| JPS6489318A (en) | Vapor growth susceptor | |
| JPS55110030A (en) | Method for vapor growth | |
| US3180755A (en) | Method of diffusing boron into silicon wafers | |
| GB1127161A (en) | Improvements in or relating to diffused base transistors | |
| GB1323025A (en) | Impurity diffusion process employing wafers made of desired impurity as impurity sources | |
| JPS5655038A (en) | Diffusing method for impurity into semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |