GB1502754A - Heat-treatment of semi-conductor wafers - Google Patents
Heat-treatment of semi-conductor wafersInfo
- Publication number
- GB1502754A GB1502754A GB39644/76A GB3964476A GB1502754A GB 1502754 A GB1502754 A GB 1502754A GB 39644/76 A GB39644/76 A GB 39644/76A GB 3964476 A GB3964476 A GB 3964476A GB 1502754 A GB1502754 A GB 1502754A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafers
- heat
- tube
- treatment
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 title abstract 6
- 238000010438 heat treatment Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G33/00—Screw or rotary spiral conveyors
- B65G33/02—Screw or rotary spiral conveyors for articles
- B65G33/06—Screw or rotary spiral conveyors for articles conveyed and guided by parallel screws
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/106—Continuous processes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1502754 Screw conveyers SIEMENS AG 24 Sept 1976 [22 Dec 1975 3 May 1976 2 July 1976] 39644/76 Heading B8A [Also in Division H1] In a method of heat-treating semi-conductor wafers 4, during the heat-treatment, the wafers are successively conveyed through a furnace tube 1 by means of rotating rods 2, 9 provided with helical grooves (3), Fig. 3 (not shown), of the same pitch to receive the edges of the wafers. The ends 2, 9 typically of silicon, and projecting beyond the ends of the tube 1 of quartz or silicon, may have grooves varying in pitch along their lengths so as to provide, e.g., higher transfer rate of silicon wafers at the ends of the tube. The tube 1 may be of a rectangular cross-section. It is stated that the method enables uniform heat-treatment of the wafers by providing a constant temperature-time characteristic.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752558041 DE2558041C3 (en) | 1975-12-22 | 1975-12-22 | Method for transporting semiconductor wafers through a temperature treatment tube |
DE19762619444 DE2619444C2 (en) | 1975-12-22 | 1976-05-03 | Device for carrying out a method for transporting semiconductor wafers |
DE19762629951 DE2629951C2 (en) | 1975-12-22 | 1976-07-02 | Method for transporting semiconductor wafers through a temperature treatment tube |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1502754A true GB1502754A (en) | 1978-03-01 |
Family
ID=27186673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB39644/76A Expired GB1502754A (en) | 1975-12-22 | 1976-09-24 | Heat-treatment of semi-conductor wafers |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5277674A (en) |
FR (1) | FR2336796A1 (en) |
GB (1) | GB1502754A (en) |
IT (1) | IT1067293B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55148433A (en) * | 1979-05-08 | 1980-11-19 | Nec Corp | Manufacture of semiconductor device and device therefor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1342183A (en) * | 1919-12-29 | 1920-06-01 | Ransom George Hardiman | Wind-screen for use on conveyances and like purposes |
GB1282322A (en) * | 1968-08-29 | 1972-07-19 | Texas Instruments Inc | Continuous deposition system |
DE1801187B1 (en) * | 1968-10-04 | 1970-04-16 | Siemens Ag | Device for the heat treatment of silicon wafers |
US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
US3638927A (en) * | 1969-08-01 | 1972-02-01 | Texas Instruments Inc | Slice conveyor furnace |
NL7206014A (en) * | 1971-07-07 | 1973-01-09 | ||
US3772756A (en) * | 1972-02-23 | 1973-11-20 | Concep Machine Co Inc | Core handling system |
DE2235342A1 (en) * | 1972-07-19 | 1974-01-31 | Siemens Ag | DIFFUSION PIPE FOR DOPING SEMICONDUCTOR DISCS |
DE2357319B2 (en) * | 1973-11-16 | 1976-05-26 | Denki Kagaku Kogyo K.K., Tokio | DISC-SHAPED PHOSPHORUS DOPERANT SOURCE AND METHOD FOR MANUFACTURING IT |
DE2411142A1 (en) * | 1974-03-08 | 1975-10-09 | Bosch Gmbh Robert | Cop vessel sterilising equipment - transports through spray and drier by spiral grooved spindles accommodating vessel flanges |
-
1976
- 1976-09-24 GB GB39644/76A patent/GB1502754A/en not_active Expired
- 1976-12-17 JP JP51151879A patent/JPS5277674A/en active Pending
- 1976-12-20 IT IT30618/76A patent/IT1067293B/en active
- 1976-12-21 FR FR7638503A patent/FR2336796A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5277674A (en) | 1977-06-30 |
FR2336796A1 (en) | 1977-07-22 |
FR2336796B1 (en) | 1983-01-21 |
IT1067293B (en) | 1985-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |