GB1282322A - Continuous deposition system - Google Patents
Continuous deposition systemInfo
- Publication number
- GB1282322A GB1282322A GB3710669A GB3710669A GB1282322A GB 1282322 A GB1282322 A GB 1282322A GB 3710669 A GB3710669 A GB 3710669A GB 3710669 A GB3710669 A GB 3710669A GB 1282322 A GB1282322 A GB 1282322A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chamber
- boats
- slices
- dopant
- entrance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1282322 Continuous deposition furnaces TEXAS INSTRUMENTS Inc 23 July 1969 [29 Aug 1968] 37106/69 Heading F4B [Also in Division H1] Semiconductor slices 8 situated horizontally on boats 20 are passed continuously through a deposition chamber 13 having a flat base and a rounded top through entrance and exit portals 18, 19 occupying part only of end walls of the chamber 13. A mixture of gases for example including a source of dopant such as BBr 3 or POCl 3 , is passed into the chamber 13 through inlets 14, 16 at each end of the chamber and in the preferred application of the apparatus, under the action of heating coils 3 causes a compound including the dopant to be deposited on each slice 8, e.g. in the form of a boro-silicate or phospho-silicate glass if the slices 8 are of Si. A subsequent drive-in diffusion stage may be performed in the same apparatus. The slices 8 may be automatically loaded on to and unloaded from the boats 20, and a conveyor system 22 transfers the loaded boats 20 between the exit portal 19 of the chamber 13 and the unloading station. The gas inlet 14, 16 may be single or branched as shown and the entrance and exit portals 18, 19 may or may not extend outwardly from the ends 15, 17 of the chamber 13 in the manner shown.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75618668A | 1968-08-29 | 1968-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1282322A true GB1282322A (en) | 1972-07-19 |
Family
ID=25042380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3710669A Expired GB1282322A (en) | 1968-08-29 | 1969-07-23 | Continuous deposition system |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4822659B1 (en) |
| DE (1) | DE1943029B2 (en) |
| FR (1) | FR2022140A1 (en) |
| GB (1) | GB1282322A (en) |
| NL (1) | NL6913234A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5426526Y2 (en) * | 1973-10-24 | 1979-09-01 | ||
| GB1502754A (en) * | 1975-12-22 | 1978-03-01 | Siemens Ag | Heat-treatment of semi-conductor wafers |
| US4479455A (en) * | 1983-03-14 | 1984-10-30 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system to produce a profiled semiconductor layer |
-
1969
- 1969-07-23 GB GB3710669A patent/GB1282322A/en not_active Expired
- 1969-08-23 DE DE19691943029 patent/DE1943029B2/en not_active Withdrawn
- 1969-08-25 FR FR6928992A patent/FR2022140A1/fr not_active Withdrawn
- 1969-08-28 JP JP6766369A patent/JPS4822659B1/ja active Pending
- 1969-08-29 NL NL6913234A patent/NL6913234A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1943029A1 (en) | 1970-03-26 |
| JPS4822659B1 (en) | 1973-07-07 |
| DE1943029B2 (en) | 1972-01-13 |
| FR2022140A1 (en) | 1970-07-31 |
| NL6913234A (en) | 1970-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |