GB1385282A - Iamge pick up devices - Google Patents

Iamge pick up devices

Info

Publication number
GB1385282A
GB1385282A GB5901672A GB5901672A GB1385282A GB 1385282 A GB1385282 A GB 1385282A GB 5901672 A GB5901672 A GB 5901672A GB 5901672 A GB5901672 A GB 5901672A GB 1385282 A GB1385282 A GB 1385282A
Authority
GB
United Kingdom
Prior art keywords
wafer
charge
transfer
wells
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5901672A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1385282A publication Critical patent/GB1385282A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351Substrate regions of field-effect devices
    • H10D62/386Substrate regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB5901672A 1971-12-23 1972-12-21 Iamge pick up devices Expired GB1385282A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (1)

Publication Number Publication Date
GB1385282A true GB1385282A (en) 1975-02-26

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5901672A Expired GB1385282A (en) 1971-12-23 1972-12-21 Iamge pick up devices

Country Status (13)

Country Link
JP (1) JPS5547506B2 (enrdf_load_stackoverflow)
AT (1) AT326741B (enrdf_load_stackoverflow)
BE (1) BE793094A (enrdf_load_stackoverflow)
CA (1) CA970864A (enrdf_load_stackoverflow)
CH (1) CH551693A (enrdf_load_stackoverflow)
DE (1) DE2262047C2 (enrdf_load_stackoverflow)
ES (1) ES410300A1 (enrdf_load_stackoverflow)
FR (1) FR2164912B1 (enrdf_load_stackoverflow)
GB (1) GB1385282A (enrdf_load_stackoverflow)
IL (1) IL41127A (enrdf_load_stackoverflow)
IT (1) IT974046B (enrdf_load_stackoverflow)
NL (1) NL7217547A (enrdf_load_stackoverflow)
SE (1) SE386045B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003388A1 (en) * 1985-11-26 1987-06-04 Jabali Pty Ltd., Photo-electric imaging device
EP1855321A3 (en) * 1996-11-01 2008-08-06 The Regents of the University of California Back-illuminated fully depleted charge coupled device comprising low-resistivity transparent window layer

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (enrdf_load_stackoverflow) * 1972-09-14 1974-05-14
JPS5046033A (enrdf_load_stackoverflow) * 1973-08-28 1975-04-24
FR2259438B1 (enrdf_load_stackoverflow) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987003388A1 (en) * 1985-11-26 1987-06-04 Jabali Pty Ltd., Photo-electric imaging device
US4771183A (en) * 1985-11-26 1988-09-13 Jabali Pty. Ltd. Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas
EP1855321A3 (en) * 1996-11-01 2008-08-06 The Regents of the University of California Back-illuminated fully depleted charge coupled device comprising low-resistivity transparent window layer

Also Published As

Publication number Publication date
ES410300A1 (es) 1975-12-01
DE2262047C2 (de) 1983-03-17
FR2164912B1 (enrdf_load_stackoverflow) 1977-04-08
AT326741B (de) 1975-12-29
JPS4874190A (enrdf_load_stackoverflow) 1973-10-05
IL41127A0 (en) 1973-02-28
BE793094A (fr) 1973-04-16
IT974046B (it) 1974-06-20
ATA1099772A (de) 1975-03-15
CH551693A (de) 1974-07-15
DE2262047A1 (de) 1973-07-05
FR2164912A1 (enrdf_load_stackoverflow) 1973-08-03
CA970864A (en) 1975-07-08
JPS5547506B2 (enrdf_load_stackoverflow) 1980-12-01
NL7217547A (enrdf_load_stackoverflow) 1973-06-26
IL41127A (en) 1976-03-31
SE386045B (sv) 1976-07-26

Similar Documents

Publication Publication Date Title
US3858232A (en) Information storage devices
GB1431209A (en) Method and apparatus for sensing radiation and providing electri cal readout
US3473032A (en) Photoelectric surface induced p-n junction device
GB1394520A (en) Charge coupled device area imaging array
GB1305801A (enrdf_load_stackoverflow)
GB1385282A (en) Iamge pick up devices
US4087832A (en) Two-phase charge coupled device structure
GB1443718A (en) Control of -blooming- in charge-coupled image sensing arrays
GB1414183A (en) Charge coupled devices
JPS57173966A (en) Solid state image pickup device
GB1365751A (en) Image pick up devices
US3906544A (en) Semiconductor imaging detector device
KR930007532B1 (ko) Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법
US3787823A (en) Light controllable charge transfer device
US4649407A (en) Charge coupled device for transferring electric charge
GB1153949A (en) Improvements in and relating to Image Transducing Tube
GB1520965A (en) Opto-electronic sensors
US3646391A (en) Image-transducing storage tube
US4385307A (en) Solid state image sensing device for enhanced charge carrier accumulation
USRE27775E (en) Photoelectric induced i -n junction devices
GB1408892A (en) Semiconductor devices for information storage and transfer
JPS6154314B2 (enrdf_load_stackoverflow)
GB1576144A (en) Methods of manufacturing charge transfer devices
WO1990012423A1 (en) Image sensor
JPS57173969A (en) Solid state image pickup device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee