ES410300A1 - Aparato de transferencia de carga para la formacion de ima-genes. - Google Patents

Aparato de transferencia de carga para la formacion de ima-genes.

Info

Publication number
ES410300A1
ES410300A1 ES410300A ES410300A ES410300A1 ES 410300 A1 ES410300 A1 ES 410300A1 ES 410300 A ES410300 A ES 410300A ES 410300 A ES410300 A ES 410300A ES 410300 A1 ES410300 A1 ES 410300A1
Authority
ES
Spain
Prior art keywords
wafer
charge transfer
adjacent
potential wells
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES410300A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES410300A1 publication Critical patent/ES410300A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351Substrate regions of field-effect devices
    • H10D62/386Substrate regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
ES410300A 1971-12-23 1972-12-02 Aparato de transferencia de carga para la formacion de ima-genes. Expired ES410300A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (1)

Publication Number Publication Date
ES410300A1 true ES410300A1 (es) 1975-12-01

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
ES410300A Expired ES410300A1 (es) 1971-12-23 1972-12-02 Aparato de transferencia de carga para la formacion de ima-genes.

Country Status (13)

Country Link
JP (1) JPS5547506B2 (enrdf_load_stackoverflow)
AT (1) AT326741B (enrdf_load_stackoverflow)
BE (1) BE793094A (enrdf_load_stackoverflow)
CA (1) CA970864A (enrdf_load_stackoverflow)
CH (1) CH551693A (enrdf_load_stackoverflow)
DE (1) DE2262047C2 (enrdf_load_stackoverflow)
ES (1) ES410300A1 (enrdf_load_stackoverflow)
FR (1) FR2164912B1 (enrdf_load_stackoverflow)
GB (1) GB1385282A (enrdf_load_stackoverflow)
IL (1) IL41127A (enrdf_load_stackoverflow)
IT (1) IT974046B (enrdf_load_stackoverflow)
NL (1) NL7217547A (enrdf_load_stackoverflow)
SE (1) SE386045B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (enrdf_load_stackoverflow) * 1972-09-14 1974-05-14
JPS5046033A (enrdf_load_stackoverflow) * 1973-08-28 1975-04-24
FR2259438B1 (enrdf_load_stackoverflow) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device
US4771183A (en) * 1985-11-26 1988-09-13 Jabali Pty. Ltd. Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas
EP0950264A4 (en) * 1996-11-01 2000-04-26 Lawrence Berkeley Lab PHOTOTRANSPARENT WINDOW WITH LOW RESISTANCE CONNECTED TO PHOTO-SENSITIVE SILICON DETECTOR

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Also Published As

Publication number Publication date
DE2262047C2 (de) 1983-03-17
GB1385282A (en) 1975-02-26
FR2164912B1 (enrdf_load_stackoverflow) 1977-04-08
AT326741B (de) 1975-12-29
JPS4874190A (enrdf_load_stackoverflow) 1973-10-05
IL41127A0 (en) 1973-02-28
BE793094A (fr) 1973-04-16
IT974046B (it) 1974-06-20
ATA1099772A (de) 1975-03-15
CH551693A (de) 1974-07-15
DE2262047A1 (de) 1973-07-05
FR2164912A1 (enrdf_load_stackoverflow) 1973-08-03
CA970864A (en) 1975-07-08
JPS5547506B2 (enrdf_load_stackoverflow) 1980-12-01
NL7217547A (enrdf_load_stackoverflow) 1973-06-26
IL41127A (en) 1976-03-31
SE386045B (sv) 1976-07-26

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19890227