BE793094A - Dispositif de formation d'images a transfert de charge - Google Patents

Dispositif de formation d'images a transfert de charge

Info

Publication number
BE793094A
BE793094A BE793094DA BE793094A BE 793094 A BE793094 A BE 793094A BE 793094D A BE793094D A BE 793094DA BE 793094 A BE793094 A BE 793094A
Authority
BE
Belgium
Prior art keywords
charge transfer
training device
transfer image
image training
charge
Prior art date
Application number
Other languages
English (en)
Inventor
G E Smith
F Vratny
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE793094A publication Critical patent/BE793094A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BE793094D 1971-12-23 Dispositif de formation d'images a transfert de charge BE793094A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (1)

Publication Number Publication Date
BE793094A true BE793094A (fr) 1973-04-16

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
BE793094D BE793094A (fr) 1971-12-23 Dispositif de formation d'images a transfert de charge

Country Status (13)

Country Link
JP (1) JPS5547506B2 (fr)
AT (1) AT326741B (fr)
BE (1) BE793094A (fr)
CA (1) CA970864A (fr)
CH (1) CH551693A (fr)
DE (1) DE2262047C2 (fr)
ES (1) ES410300A1 (fr)
FR (1) FR2164912B1 (fr)
GB (1) GB1385282A (fr)
IL (1) IL41127A (fr)
IT (1) IT974046B (fr)
NL (1) NL7217547A (fr)
SE (1) SE386045B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (fr) * 1972-09-14 1974-05-14
JPS5046033A (fr) * 1973-08-28 1975-04-24
FR2259438B1 (fr) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS60173239A (ja) * 1984-02-16 1985-09-06 日鐵建材工業株式会社 合成床用デツキプレ−ト
WO1987003388A1 (fr) * 1985-11-26 1987-06-04 Jabali Pty Ltd., Imageur photo-electrique
US6025585A (en) * 1996-11-01 2000-02-15 The Regents Of The University Of California Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Also Published As

Publication number Publication date
FR2164912B1 (fr) 1977-04-08
IL41127A0 (en) 1973-02-28
DE2262047A1 (de) 1973-07-05
JPS4874190A (fr) 1973-10-05
NL7217547A (fr) 1973-06-26
AT326741B (de) 1975-12-29
DE2262047C2 (de) 1983-03-17
IT974046B (it) 1974-06-20
CA970864A (en) 1975-07-08
SE386045B (sv) 1976-07-26
ATA1099772A (de) 1975-03-15
CH551693A (de) 1974-07-15
FR2164912A1 (fr) 1973-08-03
IL41127A (en) 1976-03-31
JPS5547506B2 (fr) 1980-12-01
GB1385282A (en) 1975-02-26
ES410300A1 (es) 1975-12-01

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19881231