FR2164912A1 - - Google Patents

Info

Publication number
FR2164912A1
FR2164912A1 FR7246007A FR7246007A FR2164912A1 FR 2164912 A1 FR2164912 A1 FR 2164912A1 FR 7246007 A FR7246007 A FR 7246007A FR 7246007 A FR7246007 A FR 7246007A FR 2164912 A1 FR2164912 A1 FR 2164912A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7246007A
Other languages
French (fr)
Other versions
FR2164912B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2164912A1 publication Critical patent/FR2164912A1/fr
Application granted granted Critical
Publication of FR2164912B1 publication Critical patent/FR2164912B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351Substrate regions of field-effect devices
    • H10D62/386Substrate regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
FR7246007A 1971-12-23 1972-12-22 Expired FR2164912B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (2)

Publication Number Publication Date
FR2164912A1 true FR2164912A1 (enrdf_load_stackoverflow) 1973-08-03
FR2164912B1 FR2164912B1 (enrdf_load_stackoverflow) 1977-04-08

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7246007A Expired FR2164912B1 (enrdf_load_stackoverflow) 1971-12-23 1972-12-22

Country Status (13)

Country Link
JP (1) JPS5547506B2 (enrdf_load_stackoverflow)
AT (1) AT326741B (enrdf_load_stackoverflow)
BE (1) BE793094A (enrdf_load_stackoverflow)
CA (1) CA970864A (enrdf_load_stackoverflow)
CH (1) CH551693A (enrdf_load_stackoverflow)
DE (1) DE2262047C2 (enrdf_load_stackoverflow)
ES (1) ES410300A1 (enrdf_load_stackoverflow)
FR (1) FR2164912B1 (enrdf_load_stackoverflow)
GB (1) GB1385282A (enrdf_load_stackoverflow)
IL (1) IL41127A (enrdf_load_stackoverflow)
IT (1) IT974046B (enrdf_load_stackoverflow)
NL (1) NL7217547A (enrdf_load_stackoverflow)
SE (1) SE386045B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2346811A1 (fr) * 1976-03-30 1977-10-28 Philips Nv Dispositif a couplage de charge

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (enrdf_load_stackoverflow) * 1972-09-14 1974-05-14
JPS5046033A (enrdf_load_stackoverflow) * 1973-08-28 1975-04-24
FR2259438B1 (enrdf_load_stackoverflow) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device
US4771183A (en) * 1985-11-26 1988-09-13 Jabali Pty. Ltd. Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas
EP0950264A4 (en) * 1996-11-01 2000-04-26 Lawrence Berkeley Lab PHOTOTRANSPARENT WINDOW WITH LOW RESISTANCE CONNECTED TO PHOTO-SENSITIVE SILICON DETECTOR

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2346811A1 (fr) * 1976-03-30 1977-10-28 Philips Nv Dispositif a couplage de charge

Also Published As

Publication number Publication date
ES410300A1 (es) 1975-12-01
DE2262047C2 (de) 1983-03-17
GB1385282A (en) 1975-02-26
FR2164912B1 (enrdf_load_stackoverflow) 1977-04-08
AT326741B (de) 1975-12-29
JPS4874190A (enrdf_load_stackoverflow) 1973-10-05
IL41127A0 (en) 1973-02-28
BE793094A (fr) 1973-04-16
IT974046B (it) 1974-06-20
ATA1099772A (de) 1975-03-15
CH551693A (de) 1974-07-15
DE2262047A1 (de) 1973-07-05
CA970864A (en) 1975-07-08
JPS5547506B2 (enrdf_load_stackoverflow) 1980-12-01
NL7217547A (enrdf_load_stackoverflow) 1973-06-26
IL41127A (en) 1976-03-31
SE386045B (sv) 1976-07-26

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Legal Events

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