GB1350782A - Method of producing thin film transistors - Google Patents

Method of producing thin film transistors

Info

Publication number
GB1350782A
GB1350782A GB2359271*A GB2359271A GB1350782A GB 1350782 A GB1350782 A GB 1350782A GB 2359271 A GB2359271 A GB 2359271A GB 1350782 A GB1350782 A GB 1350782A
Authority
GB
United Kingdom
Prior art keywords
layer
source
deposited
insulant
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2359271*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1350782A publication Critical patent/GB1350782A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2359271*A 1970-03-06 1971-04-19 Method of producing thin film transistors Expired GB1350782A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1719770A 1970-03-06 1970-03-06

Publications (1)

Publication Number Publication Date
GB1350782A true GB1350782A (en) 1974-04-24

Family

ID=21781266

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2359271*A Expired GB1350782A (en) 1970-03-06 1971-04-19 Method of producing thin film transistors

Country Status (5)

Country Link
US (1) US3669661A (enExample)
CA (1) CA923636A (enExample)
DE (1) DE2110543A1 (enExample)
FR (1) FR2081751B1 (enExample)
GB (1) GB1350782A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775120A (en) * 1971-04-02 1973-11-27 Motorola Inc Vertical resistor
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
US4204009A (en) * 1977-12-30 1980-05-20 International Business Machines Corporation Two layer resist system
US4180604A (en) * 1977-12-30 1979-12-25 International Business Machines Corporation Two layer resist system
US4238559A (en) * 1978-08-24 1980-12-09 International Business Machines Corporation Two layer resist system
US4371423A (en) * 1979-09-04 1983-02-01 Vlsi Technology Research Association Method of manufacturing semiconductor device utilizing a lift-off technique
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
US4331758A (en) * 1980-11-03 1982-05-25 Xerox Corporation Process for the preparation of large area TFT arrays
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
US4387145A (en) * 1981-09-28 1983-06-07 Fairchild Camera & Instrument Corp. Lift-off shadow mask
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4654295A (en) * 1983-12-05 1987-03-31 Energy Conversion Devices, Inc. Method of making short channel thin film field effect transistor
IT1190294B (it) * 1986-02-13 1988-02-16 Selenia Ind Elettroniche Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile
US7867627B2 (en) * 2004-12-13 2011-01-11 Silcotek Corporation Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures

Also Published As

Publication number Publication date
FR2081751B1 (enExample) 1976-06-11
FR2081751A1 (enExample) 1971-12-10
CA923636A (en) 1973-03-27
DE2110543A1 (de) 1972-11-02
US3669661A (en) 1972-06-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee