FR2081751B1 - - Google Patents
Info
- Publication number
- FR2081751B1 FR2081751B1 FR7107702A FR7107702A FR2081751B1 FR 2081751 B1 FR2081751 B1 FR 2081751B1 FR 7107702 A FR7107702 A FR 7107702A FR 7107702 A FR7107702 A FR 7107702A FR 2081751 B1 FR2081751 B1 FR 2081751B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1719770A | 1970-03-06 | 1970-03-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2081751A1 FR2081751A1 (fr) | 1971-12-10 |
FR2081751B1 true FR2081751B1 (fr) | 1976-06-11 |
Family
ID=21781266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7107702A Expired FR2081751B1 (fr) | 1970-03-06 | 1971-03-05 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3669661A (fr) |
CA (1) | CA923636A (fr) |
DE (1) | DE2110543A1 (fr) |
FR (1) | FR2081751B1 (fr) |
GB (1) | GB1350782A (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3775120A (en) * | 1971-04-02 | 1973-11-27 | Motorola Inc | Vertical resistor |
US4115120A (en) * | 1977-09-29 | 1978-09-19 | International Business Machines Corporation | Method of forming thin film patterns by differential pre-baking of resist |
US4204009A (en) * | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Two layer resist system |
US4180604A (en) * | 1977-12-30 | 1979-12-25 | International Business Machines Corporation | Two layer resist system |
US4238559A (en) * | 1978-08-24 | 1980-12-09 | International Business Machines Corporation | Two layer resist system |
US4371423A (en) * | 1979-09-04 | 1983-02-01 | Vlsi Technology Research Association | Method of manufacturing semiconductor device utilizing a lift-off technique |
US4389481A (en) * | 1980-06-02 | 1983-06-21 | Xerox Corporation | Method of making planar thin film transistors, transistor arrays |
US4335161A (en) * | 1980-11-03 | 1982-06-15 | Xerox Corporation | Thin film transistors, thin film transistor arrays, and a process for preparing the same |
US4331758A (en) * | 1980-11-03 | 1982-05-25 | Xerox Corporation | Process for the preparation of large area TFT arrays |
US4387145A (en) * | 1981-09-28 | 1983-06-07 | Fairchild Camera & Instrument Corp. | Lift-off shadow mask |
US4404731A (en) * | 1981-10-01 | 1983-09-20 | Xerox Corporation | Method of forming a thin film transistor |
US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
US4654295A (en) * | 1983-12-05 | 1987-03-31 | Energy Conversion Devices, Inc. | Method of making short channel thin film field effect transistor |
IT1190294B (it) * | 1986-02-13 | 1988-02-16 | Selenia Ind Elettroniche | Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile |
US7867627B2 (en) * | 2004-12-13 | 2011-01-11 | Silcotek Corporation | Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures |
-
1970
- 1970-03-06 US US17197A patent/US3669661A/en not_active Expired - Lifetime
-
1971
- 1971-03-04 CA CA106851A patent/CA923636A/en not_active Expired
- 1971-03-05 DE DE19712110543 patent/DE2110543A1/de active Pending
- 1971-03-05 FR FR7107702A patent/FR2081751B1/fr not_active Expired
- 1971-04-19 GB GB2359271*A patent/GB1350782A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1350782A (en) | 1974-04-24 |
US3669661A (en) | 1972-06-13 |
FR2081751A1 (fr) | 1971-12-10 |
CA923636A (en) | 1973-03-27 |
DE2110543A1 (de) | 1972-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |