GB1347108A - Apparatus for growing single crystals - Google Patents

Apparatus for growing single crystals

Info

Publication number
GB1347108A
GB1347108A GB2207071A GB2207071A GB1347108A GB 1347108 A GB1347108 A GB 1347108A GB 2207071 A GB2207071 A GB 2207071A GB 2207071 A GB2207071 A GB 2207071A GB 1347108 A GB1347108 A GB 1347108A
Authority
GB
United Kingdom
Prior art keywords
heater
magnetic field
crystal pulling
melt
rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2207071A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1347108A publication Critical patent/GB1347108A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
GB2207071A 1970-02-18 1971-04-19 Apparatus for growing single crystals Expired GB1347108A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1393270A JPS4949307B1 (enrdf_load_stackoverflow) 1970-02-18 1970-02-18

Publications (1)

Publication Number Publication Date
GB1347108A true GB1347108A (en) 1974-02-27

Family

ID=11846948

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2207071A Expired GB1347108A (en) 1970-02-18 1971-04-19 Apparatus for growing single crystals

Country Status (3)

Country Link
JP (1) JPS4949307B1 (enrdf_load_stackoverflow)
DE (1) DE2107646A1 (enrdf_load_stackoverflow)
GB (1) GB1347108A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2144338A (en) * 1983-08-05 1985-03-06 Toshiba Kk Single crystal manufacturing apparatus
US4619730A (en) * 1979-09-20 1986-10-28 Sony Corporation Process for solidification in a magnetic field with a D.C. heater
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
US5571320A (en) * 1993-06-01 1996-11-05 Texas Instruments Incorporated Spiral heater for use in czochralski crystal pullers
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
US7179331B2 (en) 2003-10-23 2007-02-20 Crystal Growing Systems Gmbh Crystal growing equipment
CN115852484A (zh) * 2023-02-27 2023-03-28 杭州天桴光电技术有限公司 一种高效制备氟化镁多晶光学镀膜材料的装置和方法
CN115852483A (zh) * 2023-02-27 2023-03-28 杭州天桴光电技术有限公司 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
DE102007028547B4 (de) 2007-06-18 2009-10-08 Forschungsverbund Berlin E.V. Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
DE102007046409B4 (de) 2007-09-24 2009-07-23 Forschungsverbund Berlin E.V. Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
DE102008027359B4 (de) 2008-06-04 2012-04-12 Forschungsverbund Berlin E.V. Verfahren zur intensiven Durchmischung von elektrisch leitenden Schmelzen in Kristallisations- und Erstarrungsprozessen
DE102009045680B4 (de) 2009-10-14 2012-03-22 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung
DE102009046845A1 (de) 2009-11-18 2011-06-01 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren
DE102010041061B4 (de) 2010-09-20 2013-10-24 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist
DE102012204000A1 (de) * 2012-03-14 2013-09-19 Siltronic Ag Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall
AT526173B1 (de) * 2022-05-20 2024-05-15 Ebner Ind Ofenbau Temperiereinrichtung

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619730A (en) * 1979-09-20 1986-10-28 Sony Corporation Process for solidification in a magnetic field with a D.C. heater
US4622211A (en) * 1979-09-20 1986-11-11 Sony Corporation Apparatus for solidification with resistance heater and magnets
GB2144338A (en) * 1983-08-05 1985-03-06 Toshiba Kk Single crystal manufacturing apparatus
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
US5571320A (en) * 1993-06-01 1996-11-05 Texas Instruments Incorporated Spiral heater for use in czochralski crystal pullers
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
US7771530B2 (en) 2001-01-18 2010-08-10 Siltronic Ag Process and apparatus for producing a silicon single crystal
US7179331B2 (en) 2003-10-23 2007-02-20 Crystal Growing Systems Gmbh Crystal growing equipment
CN115852484A (zh) * 2023-02-27 2023-03-28 杭州天桴光电技术有限公司 一种高效制备氟化镁多晶光学镀膜材料的装置和方法
CN115852483A (zh) * 2023-02-27 2023-03-28 杭州天桴光电技术有限公司 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法

Also Published As

Publication number Publication date
JPS4949307B1 (enrdf_load_stackoverflow) 1974-12-26
DE2107646A1 (de) 1971-10-07

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee