GB954200A - Improvements in and relating to the manufacture of semiconductor bodies by crystal growing - Google Patents

Improvements in and relating to the manufacture of semiconductor bodies by crystal growing

Info

Publication number
GB954200A
GB954200A GB1534760A GB1534760A GB954200A GB 954200 A GB954200 A GB 954200A GB 1534760 A GB1534760 A GB 1534760A GB 1534760 A GB1534760 A GB 1534760A GB 954200 A GB954200 A GB 954200A
Authority
GB
United Kingdom
Prior art keywords
disc
crucible
shaft
stirrer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1534760A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB954200A publication Critical patent/GB954200A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

954,200. Crystal-polling. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 2, 1960 [May 5, 1959], No. 15347/60. Heading B1S. A rod of silicon or germanium is pulled from a melt in a crucible having two relatively moving surfaces separated by a narrow slit below the surface of the melt. As shown in Fig. 1, a quartz stirrer shaft 6 carrying a disc 8 and stirrer rods 9 passes through the base of a graphite crucible 1 having an induction heating coil 11. Shaft 6 may be oscillated as well as rotated. As shown in Fig. 2, the shaft carries a screw-type stirrer blade 23 and passes through two disc-shaped chambers 19 and 20, a substantially vertical current being directed towards the body being grown. As shown in Fig. 3, the shaft carries a piston-like disc 35 forming the base of the crucible and having a cross-shaped recess 37. As shown in Fig. 4, the shaft carries a head 51, forming the base of the crucible, which contains two disc-shaped chambers 61 and 62 and carries stirrer blades 56. Specification 903,412 is referred to.
GB1534760A 1959-05-05 1960-05-02 Improvements in and relating to the manufacture of semiconductor bodies by crystal growing Expired GB954200A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL238923 1959-05-05

Publications (1)

Publication Number Publication Date
GB954200A true GB954200A (en) 1964-04-02

Family

ID=19751706

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1534760A Expired GB954200A (en) 1959-05-05 1960-05-02 Improvements in and relating to the manufacture of semiconductor bodies by crystal growing

Country Status (4)

Country Link
CH (1) CH401916A (en)
DE (1) DE1136671B (en)
GB (1) GB954200A (en)
NL (1) NL238923A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE528916A (en) * 1953-05-18
DE1032852B (en) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Process and device for the production of semiconductor crystals by the crystal pulling process from the melt

Also Published As

Publication number Publication date
CH401916A (en) 1965-11-15
DE1136671B (en) 1962-09-20
NL238923A (en)

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