GB1341334A - Static bipolar to mos interface circuit - Google Patents
Static bipolar to mos interface circuitInfo
- Publication number
- GB1341334A GB1341334A GB2131872A GB2131872A GB1341334A GB 1341334 A GB1341334 A GB 1341334A GB 2131872 A GB2131872 A GB 2131872A GB 2131872 A GB2131872 A GB 2131872A GB 1341334 A GB1341334 A GB 1341334A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diffusions
- interface circuit
- mos interface
- static bipolar
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA116959A CA918757A (en) | 1972-01-17 | 1971-06-29 | Bipolar to mos interface circuit |
| US21849472A | 1972-01-17 | 1972-01-17 | |
| CA218,493A CA1057331A (en) | 1974-02-07 | 1975-01-23 | Aspirated vehicle occupant restraint system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1341334A true GB1341334A (en) | 1973-12-19 |
Family
ID=27161283
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2131872A Expired GB1341334A (en) | 1971-06-29 | 1972-05-08 | Static bipolar to mos interface circuit |
| GB2131972A Expired GB1388629A (en) | 1971-06-29 | 1972-05-08 | Bipolar to mos interface circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2131972A Expired GB1388629A (en) | 1971-06-29 | 1972-05-08 | Bipolar to mos interface circuit |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2231203A1 (enExample) |
| FR (1) | FR2144361A5 (enExample) |
| GB (2) | GB1341334A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043489A1 (de) * | 1980-07-09 | 1982-01-13 | Siemens Aktiengesellschaft | Schalter mit in Serie geschalteten MOS-FET |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5759689B2 (enExample) * | 1974-09-30 | 1982-12-16 | Citizen Watch Co Ltd |
-
1972
- 1972-05-08 GB GB2131872A patent/GB1341334A/en not_active Expired
- 1972-05-08 GB GB2131972A patent/GB1388629A/en not_active Expired
- 1972-06-26 DE DE2231203A patent/DE2231203A1/de active Pending
- 1972-06-28 FR FR7223375A patent/FR2144361A5/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043489A1 (de) * | 1980-07-09 | 1982-01-13 | Siemens Aktiengesellschaft | Schalter mit in Serie geschalteten MOS-FET |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2144361A5 (enExample) | 1973-02-09 |
| DE2231203A1 (de) | 1973-01-25 |
| GB1388629A (en) | 1975-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |