GB1448303A - Transistor arrangements - Google Patents

Transistor arrangements

Info

Publication number
GB1448303A
GB1448303A GB2373574A GB2373574A GB1448303A GB 1448303 A GB1448303 A GB 1448303A GB 2373574 A GB2373574 A GB 2373574A GB 2373574 A GB2373574 A GB 2373574A GB 1448303 A GB1448303 A GB 1448303A
Authority
GB
United Kingdom
Prior art keywords
transistor
layer
fets
semi
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2373574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1448303A publication Critical patent/GB1448303A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

1448303 Semi-conductor devices SIEMENS AG 29 May 1974 [19 July 1973] 23735/74 Heading H1K A transistor arrangement comprises two FETs 42, 52, Fig. 1, integrated in a layer of semi-conductor material on an insulating substrate, the transistors 42, 52 having a common channel zone 1 covered by a common gate insulation and a common gate electrode, the source and drain regions 5, 51 of one transistor 52 lying opposite each other on a first axis parallel to the surface of the layer and the source and drain regions 4, 41 of the other transistor 42 lying opposite each other on another axis parallel to the surface of the layer and at an angle to the first axis. The insulating substrate may be spinel or saphire, the semiconductor layer monocrystalline silicon, and the insulation SiO 2 and/or Si 3 N 4 or SiO 2 and Al 2 O 3 . The two FETs 42, 52 are complementary so that only one conducts at a time. A word storage element uses a selector transistor 15, Fig. 8, a word line 18, digit lines 16, 17 and a double-transistor arrangement 14. The transistor 15 blocks only when the information stored in the transistor arrangement 14 and the states of the digit lines 16, 17 are identical.
GB2373574A 1973-07-19 1974-05-29 Transistor arrangements Expired GB1448303A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732336821 DE2336821A1 (en) 1973-07-19 1973-07-19 TRANSISTOR ARRANGEMENT

Publications (1)

Publication Number Publication Date
GB1448303A true GB1448303A (en) 1976-09-02

Family

ID=5887458

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2373574A Expired GB1448303A (en) 1973-07-19 1974-05-29 Transistor arrangements

Country Status (8)

Country Link
JP (1) JPS5043849A (en)
BE (1) BE817847A (en)
DE (1) DE2336821A1 (en)
FR (1) FR2258003B3 (en)
GB (1) GB1448303A (en)
IT (1) IT1017250B (en)
LU (1) LU70553A1 (en)
NL (1) NL7409397A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2403848A (en) * 2003-07-08 2005-01-12 Seiko Epson Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435752A1 (en) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München CIRCUIT FOR THE STORAGE OF DIGITAL SIGNALS

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2403848A (en) * 2003-07-08 2005-01-12 Seiko Epson Corp Semiconductor device
WO2005006439A1 (en) * 2003-07-08 2005-01-20 Seiko Epson Corporation Semiconductor device
CN100508195C (en) * 2003-07-08 2009-07-01 精工爱普生株式会社 Semiconductor device and operation method thereof

Also Published As

Publication number Publication date
JPS5043849A (en) 1975-04-19
FR2258003B3 (en) 1977-05-06
BE817847A (en) 1974-11-18
IT1017250B (en) 1977-07-20
FR2258003A1 (en) 1975-08-08
NL7409397A (en) 1975-01-21
LU70553A1 (en) 1974-11-28
DE2336821A1 (en) 1975-02-06

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee