SE324816B - - Google Patents

Info

Publication number
SE324816B
SE324816B SE3863/65A SE386365A SE324816B SE 324816 B SE324816 B SE 324816B SE 3863/65 A SE3863/65 A SE 3863/65A SE 386365 A SE386365 A SE 386365A SE 324816 B SE324816 B SE 324816B
Authority
SE
Sweden
Prior art keywords
transistors
zones
electrodes
capacitors
march
Prior art date
Application number
SE3863/65A
Other languages
English (en)
Inventor
J Luscher
Original Assignee
Suisse Pour L Ind Horlogere Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH399464A external-priority patent/CH417779A/fr
Application filed by Suisse Pour L Ind Horlogere Sa filed Critical Suisse Pour L Ind Horlogere Sa
Publication of SE324816B publication Critical patent/SE324816B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C3/00—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means
    • G04C3/04—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means wherein movement is regulated by a balance
    • G04C3/06—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means wherein movement is regulated by a balance using electromagnetic coupling between electric power source and balance
    • G04C3/065—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means wherein movement is regulated by a balance using electromagnetic coupling between electric power source and balance the balance controlling gear-train by means of static switches, e.g. transistor circuits
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G3/00—Producing timing pulses
    • G04G3/02—Circuits for deriving low frequency timing pulses from pulses of higher frequency
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356069—Bistable circuits using additional transistors in the feedback circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE3863/65A 1964-03-26 1965-03-25 SE324816B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH399464A CH417779A (fr) 1964-03-26 1964-03-26 Dispositif électronique comprenant au moins un circuit électronique intégré
CH503165A CH456774A (fr) 1964-03-26 1965-04-09 Dispositif électronique comprenant au moins un circuit électronique intégré

Publications (1)

Publication Number Publication Date
SE324816B true SE324816B (enExample) 1970-06-15

Family

ID=25694358

Family Applications (2)

Application Number Title Priority Date Filing Date
SE3863/65A SE324816B (enExample) 1964-03-26 1965-03-25
SE04097/66A SE338352B (enExample) 1964-03-26 1966-03-28

Family Applications After (1)

Application Number Title Priority Date Filing Date
SE04097/66A SE338352B (enExample) 1964-03-26 1966-03-28

Country Status (7)

Country Link
US (2) US3383569A (enExample)
BE (2) BE661738A (enExample)
CH (1) CH456774A (enExample)
DE (1) DE1462997A1 (enExample)
GB (2) GB1098468A (enExample)
NL (2) NL146331B (enExample)
SE (2) SE324816B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517219A (en) * 1966-12-29 1970-06-23 Nippon Electric Co Scanning pulse generator
US3473094A (en) * 1967-08-02 1969-10-14 Rca Corp Integrated arrangement for integrated circuit structures
US3564135A (en) * 1967-10-12 1971-02-16 Rca Corp Integrated display panel utilizing field-effect transistors
US3599010A (en) * 1967-11-13 1971-08-10 Texas Instruments Inc High speed, low power, dynamic shift register with synchronous logic gates
US3577043A (en) * 1967-12-07 1971-05-04 United Aircraft Corp Mosfet with improved voltage breakdown characteristics
US3603816A (en) * 1968-08-09 1971-09-07 Bunker Ramo High speed digital circuits
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
US3590342A (en) * 1968-11-06 1971-06-29 Hewlett Packard Co Mos integrated circuit with regions of ground potential interconnected through the semiconductor substrate
CH483754A (fr) * 1968-11-11 1969-12-31 Centre Electron Horloger Circuit diviseur de fréquence
NL6817658A (enExample) * 1968-12-10 1970-06-12
US3573490A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Capacitor pull-up reigister bit
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
DE1924208C3 (de) * 1969-05-12 1982-08-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiterschaltung
JPS4839874B1 (enExample) * 1969-09-20 1973-11-27
US3663835A (en) * 1970-01-28 1972-05-16 Ibm Field effect transistor circuit
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3657570A (en) * 1970-05-18 1972-04-18 Shell Oil Co Ratioless flip-flop
US3753006A (en) * 1970-10-14 1973-08-14 Texas Instruments Inc High speed, low power, dynamic shift register with synchronous logic gates
DE2104379C3 (de) * 1971-01-30 1982-04-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltungsanordnung zur Realisierung einer steuerbaren Kapazität
JPS4835730A (enExample) * 1971-09-01 1973-05-26
US3748498A (en) * 1972-07-27 1973-07-24 American Micro Syst Low voltage quasi static flip-flop
CH730874A4 (enExample) * 1974-05-29 1977-01-31
US4190778A (en) * 1976-01-09 1980-02-26 Siemens Aktiengesellschaft A.C. supplied integrated semi-conductor logic circuit
CH617298A5 (enExample) * 1976-05-07 1980-05-14 Ebauches Sa
CH613839B (fr) * 1977-06-08 Ebauches Sa Etage diviseur de frequence binaire.
US6420746B1 (en) 1998-10-29 2002-07-16 International Business Machines Corporation Three device DRAM cell with integrated capacitor and local interconnect
US8581317B2 (en) * 2008-08-27 2013-11-12 Texas Instruments Incorporated SOI MuGFETs having single gate electrode level
US9762246B2 (en) * 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (enExample) * 1960-03-08
NL262767A (enExample) * 1960-04-01
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3158757A (en) * 1962-04-23 1964-11-24 Northern Electric Co Long interval timer circuit
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
BE643857A (enExample) * 1963-02-14
US3267295A (en) * 1964-04-13 1966-08-16 Rca Corp Logic circuits

Also Published As

Publication number Publication date
BE661738A (enExample) 1965-09-27
GB1098468A (en) 1968-01-10
NL146331B (nl) 1975-06-16
US3383569A (en) 1968-05-14
US3383570A (en) 1968-05-14
SE338352B (enExample) 1971-09-06
BE679291A (enExample) 1966-10-10
DE1514421B2 (de) 1971-02-18
DE1462997A1 (de) 1968-12-12
NL6503847A (enExample) 1965-09-27
DE1514421A1 (de) 1969-08-28
NL6604790A (enExample) 1966-10-10
GB1152367A (en) 1969-05-14
CH456774A (fr) 1968-07-31

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