GB1338067A - Blocking field effect transistor - Google Patents

Blocking field effect transistor

Info

Publication number
GB1338067A
GB1338067A GB5973770A GB5973770A GB1338067A GB 1338067 A GB1338067 A GB 1338067A GB 5973770 A GB5973770 A GB 5973770A GB 5973770 A GB5973770 A GB 5973770A GB 1338067 A GB1338067 A GB 1338067A
Authority
GB
United Kingdom
Prior art keywords
drain
edge
field effect
effect transistor
blocking field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5973770A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702000092 external-priority patent/DE2000092C3/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1338067A publication Critical patent/GB1338067A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB5973770A 1970-01-02 1970-12-16 Blocking field effect transistor Expired GB1338067A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702000092 DE2000092C3 (de) 1970-01-02 Anreicherungs-Isolierschicht-Feldeffekttransistor

Publications (1)

Publication Number Publication Date
GB1338067A true GB1338067A (en) 1973-11-21

Family

ID=5758965

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5973770A Expired GB1338067A (en) 1970-01-02 1970-12-16 Blocking field effect transistor

Country Status (2)

Country Link
FR (1) FR2075896B1 (enExample)
GB (1) GB1338067A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454844A (en) * 1966-07-01 1969-07-08 Hughes Aircraft Co Field effect device with overlapping insulated gates
FR1566228A (enExample) * 1968-01-08 1969-05-09
AU1352970A (en) * 1969-04-28 1971-10-14 Itt Industries, Inc High voltage insulated gate field effect device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors

Also Published As

Publication number Publication date
FR2075896B1 (enExample) 1976-09-03
DE2000092A1 (de) 1971-07-08
DE2000092B2 (de) 1977-06-16
FR2075896A1 (enExample) 1971-10-15

Similar Documents

Publication Publication Date Title
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1396673A (en) Stabilizing fet devices
GB1099381A (en) Solid state field-effect devices
GB1186421A (en) Insulated-Gate Field-Effect Transistor
GB1518984A (en) Integrated circuit
EP0339962A3 (en) Field effect semiconductor device
GB1354071A (en) Memory elements
UST964009I4 (en) High voltage semiconductor structure
GB1383981A (en) Electrically alterable floating gate device and method for altering same
GB1060208A (en) Avalanche transistor
GB1390135A (en) Insulated gate semiconductor device
GB1357553A (en) Insulated-gate field effect transistors
GB1378146A (en) Insulated gate field effect transistor arrangements
GB1131675A (en) Semiconductor device
GB1338067A (en) Blocking field effect transistor
GB1471282A (en) Field effect semiconductor devices
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
GB1400780A (en) Insulated gate field effect transistors
SE7906289L (sv) Halvledaranordning
GB1276791A (en) Semiconductor device
GB1484295A (en) Insulated gate capacitor
JPS5275187A (en) Mos type semiconductor device
GB1179388A (en) Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
GB1423449A (en) Semiconductor device
JPS54101680A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees