FR2075896A1 - - Google Patents
Info
- Publication number
- FR2075896A1 FR2075896A1 FR7046905A FR7046905A FR2075896A1 FR 2075896 A1 FR2075896 A1 FR 2075896A1 FR 7046905 A FR7046905 A FR 7046905A FR 7046905 A FR7046905 A FR 7046905A FR 2075896 A1 FR2075896 A1 FR 2075896A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702000092 DE2000092C3 (de) | 1970-01-02 | Anreicherungs-Isolierschicht-Feldeffekttransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2075896A1 true FR2075896A1 (enExample) | 1971-10-15 |
| FR2075896B1 FR2075896B1 (enExample) | 1976-09-03 |
Family
ID=5758965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7046905A Expired FR2075896B1 (enExample) | 1970-01-02 | 1970-12-28 |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2075896B1 (enExample) |
| GB (1) | GB1338067A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8400336D0 (en) * | 1984-01-06 | 1984-02-08 | Texas Instruments Ltd | Field effect transistors |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1138771A (en) * | 1966-07-01 | 1969-01-01 | Hughes Aircraft Co | Field effect device with overlapping insulated gates |
| FR1566228A (enExample) * | 1968-01-08 | 1969-05-09 | ||
| DE2019683A1 (de) * | 1969-04-28 | 1970-11-05 | Itt Ind Gmbh Deutsche | Isolierschicht-Feldeffekttransistor |
-
1970
- 1970-12-16 GB GB5973770A patent/GB1338067A/en not_active Expired
- 1970-12-28 FR FR7046905A patent/FR2075896B1/fr not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1138771A (en) * | 1966-07-01 | 1969-01-01 | Hughes Aircraft Co | Field effect device with overlapping insulated gates |
| FR1566228A (enExample) * | 1968-01-08 | 1969-05-09 | ||
| DE2019683A1 (de) * | 1969-04-28 | 1970-11-05 | Itt Ind Gmbh Deutsche | Isolierschicht-Feldeffekttransistor |
Non-Patent Citations (3)
| Title |
|---|
| (REVUE AMERICAINE"PROCEEDINGS OF THE IEEE.APPLIED OPTICE",VOLUME 54,NO.10,OCTOBRE 1966,"A NEW IG TETRODE WITH HIGH DRAIN BREAKDOWN FOTENTIAL",H.G.DILL,PAGES 1494-1495) * |
| IG TETRODE WITH HIGH DRAIN BREAKDOWN FOTENTIAL",H.G.DILL,PAGES 1494-1495) * |
| REVUE AMERICAINE"PROCEEDINGS OF THE IEEE.APPLIED OPTICE",VOLUME 54,NO.10,OCTOBRE 1966,"A NEW * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1338067A (en) | 1973-11-21 |
| FR2075896B1 (enExample) | 1976-09-03 |
| DE2000092A1 (de) | 1971-07-08 |
| DE2000092B2 (de) | 1977-06-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |