GB1336288A - Semiconductor device and apparatus and process for its manufacture - Google Patents
Semiconductor device and apparatus and process for its manufactureInfo
- Publication number
- GB1336288A GB1336288A GB3201872A GB3201872A GB1336288A GB 1336288 A GB1336288 A GB 1336288A GB 3201872 A GB3201872 A GB 3201872A GB 3201872 A GB3201872 A GB 3201872A GB 1336288 A GB1336288 A GB 1336288A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- plate
- conductor
- semi
- july
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 150000004767 nitrides Chemical class 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000012298 atmosphere Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract 2
- 239000010935 stainless steel Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5004271A JPS517545B1 (enrdf_load_stackoverflow) | 1971-07-07 | 1971-07-07 | |
JP5078671A JPS517547B1 (enrdf_load_stackoverflow) | 1971-07-09 | 1971-07-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1336288A true GB1336288A (en) | 1973-11-07 |
Family
ID=26390489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3201872A Expired GB1336288A (en) | 1971-07-07 | 1972-07-07 | Semiconductor device and apparatus and process for its manufacture |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2233541C3 (enrdf_load_stackoverflow) |
FR (1) | FR2144851B1 (enrdf_load_stackoverflow) |
GB (1) | GB1336288A (enrdf_load_stackoverflow) |
NL (1) | NL155986B (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
US4079037A (en) * | 1976-11-26 | 1978-03-14 | Dow Corning Corporation | Alkenyloxy silicon compositions |
DE3206421A1 (de) * | 1982-02-23 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von schichten aus hochschmelzenden metallen bzw. metallverbindungen durch abscheidung aus der dampfphase |
-
1972
- 1972-07-06 FR FR7224529A patent/FR2144851B1/fr not_active Expired
- 1972-07-07 DE DE2233541A patent/DE2233541C3/de not_active Expired
- 1972-07-07 NL NL7209496.A patent/NL155986B/xx not_active IP Right Cessation
- 1972-07-07 GB GB3201872A patent/GB1336288A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL155986B (nl) | 1978-02-15 |
FR2144851A1 (enrdf_load_stackoverflow) | 1973-02-16 |
NL7209496A (enrdf_load_stackoverflow) | 1973-01-09 |
DE2233541C3 (de) | 1980-01-31 |
DE2233541B2 (de) | 1976-01-22 |
DE2233541A1 (de) | 1973-01-18 |
FR2144851B1 (enrdf_load_stackoverflow) | 1978-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890004447A (ko) | 초전도 재료 및 초전도박막의 제조방법 | |
JPS6243335B2 (enrdf_load_stackoverflow) | ||
GB1133936A (en) | Method and apparatus for forming tenacious deposits on a surface | |
JPS6032973B2 (ja) | 半導体メモリデバイスの製造方法 | |
GB1242492A (en) | Improvements relating to the coating of a substrate by r.f. sputtering | |
JPS60257526A (ja) | 絶縁体層の成長方法 | |
GB1412998A (en) | Nitrogen-doped beta tantalum | |
US3887451A (en) | Method for sputtering garnet compound layer | |
US3629088A (en) | Sputtering method for deposition of silicon oxynitride | |
GB1336288A (en) | Semiconductor device and apparatus and process for its manufacture | |
GB1181559A (en) | Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride. | |
US3463715A (en) | Method of cathodically sputtering a layer of silicon having a reduced resistivity | |
GB1358438A (en) | Process for the manufacture of a semiconductor component or an integrated semiconductor circuit | |
JPH10219430A (ja) | マグネトロンスパッタ法により得られる化合物薄膜ならびにそれを製造するための方法および装置 | |
US3063871A (en) | Production of semiconductor films | |
US3451845A (en) | Method for producing thin films of rare earth chalcogenides | |
Feldman et al. | Mass spectra analyses of impurities and ion clusters in amorphous and crystalline silicon films | |
JPH0644893A (ja) | 陰極構造体 | |
GB1387774A (en) | Deposition of phosphosilicate glass | |
JPH021367B2 (enrdf_load_stackoverflow) | ||
Winsztal et al. | Preparation and investigation of LaB6 films | |
JP2003105526A (ja) | 珪素化合物膜の成膜方法 | |
JP2002294436A (ja) | 酸化窒化シリコンの成膜方法 | |
Pinto et al. | Getter-Bias Sputtering of High Purity Metal Films in a High Current Vacuum Discharge in the 10-4 Torr Range | |
JPS58123772A (ja) | 半導体素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PE20 | Patent expired after termination of 20 years |