GB1336288A - Semiconductor device and apparatus and process for its manufacture - Google Patents
Semiconductor device and apparatus and process for its manufactureInfo
- Publication number
- GB1336288A GB1336288A GB3201872A GB3201872A GB1336288A GB 1336288 A GB1336288 A GB 1336288A GB 3201872 A GB3201872 A GB 3201872A GB 3201872 A GB3201872 A GB 3201872A GB 1336288 A GB1336288 A GB 1336288A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- plate
- conductor
- semi
- july
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 150000004767 nitrides Chemical class 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000012298 atmosphere Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract 2
- 239000010935 stainless steel Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1336288 Sputtering nitrides on to semiconductors MITSUBISHI DENKI KK 7 July 1972 [7 July 1971 9 July 1971] 32018/72 Heading C7F [Also in Division H7] A semi-conductor device comprises Fig. 1 a substrate 10 of semi-conductor material e. g. p or n type Si or Ge overlain by a film 12 of a nitride of a valve metal (Al, Nb, Ti, Wo, Ta, Mo) on which a metallic electrode layer 14 is deposited on the remaining face of the substrate and terminals 18, 20 evaporated on the electrodes. The nitride film is deposited by sputtering from a plasma column, and the electrodes may e. g. be of Al, Au, Ag, Cu, Ni. In a modification Fig. 2 (not shown) a recess is formed in a substrate face and the nitride film is disposed therein so as to project therefrom, and this construction may be used for integral circuitry. For production, an evacuated envelope Fig.3 is supported on a stainless steel base-plate 32 and disposed therein is a semi-conductor substrate 10 and a spaced facing plate 34 of valve metal e.g. Mo; the substrate being fitted into a supporting quartz hollow cylinder 36b carried by a quartz leg 36a and the metal plate 34 being welded to stainless steel support 38 carried by conductor 40 insulated by passing through the base-plate to a negative D. C. source and sleeved with glass 42. Anode 44 is carried by conductor 50 insulated by a glass sleeve 52 and passing through base-plate 36, above the opening of a metal tube 48 whose closed end carries a hot cathode electrode 46 returned to earth; while the anode is energized from positive D.C. source 54 returned to earth. The envelope is surrounded by an air-cored coil 58 concentrating the plasma column between electrodes 44, 46, and the envelope is evacuated through port 62 and an atmosphere of nitrogen at reduced pressure is introduced through port 64. Initially the substrate with an appropriate impurity concentration is cleaned in hot H 2 SO 4 , hot HNO 3 , and HF and formed with a thin layer of SiO 2 ; after which it is fitted into support 36b and Mo plate 34 is welded to support 38, after which the nitrogen atmosphere is introduced, the cathode 46 is heated, and the anode 44 is energized to establish a plasma column concentrated by energization of coil 58. A negative energization is applied to plate 34, and detached M o atoms combine with the atmosphere of N 2 to form a nitride film on the semi-conductor substrate. Thereafter, an Al electrode is vacuum evaporated on the nitride layer, and on the remaining face of the substrate, and the desired areas of coating are defined by photo-lithography.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5004271A JPS517545B1 (en) | 1971-07-07 | 1971-07-07 | |
| JP5078671A JPS517547B1 (en) | 1971-07-09 | 1971-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1336288A true GB1336288A (en) | 1973-11-07 |
Family
ID=26390489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3201872A Expired GB1336288A (en) | 1971-07-07 | 1972-07-07 | Semiconductor device and apparatus and process for its manufacture |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2233541C3 (en) |
| FR (1) | FR2144851B1 (en) |
| GB (1) | GB1336288A (en) |
| NL (1) | NL155986B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
| US4079037A (en) * | 1976-11-26 | 1978-03-14 | Dow Corning Corporation | Alkenyloxy silicon compositions |
| DE3206421A1 (en) * | 1982-02-23 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING LAYERS FROM HIGH-MELTING METALS OR METAL COMPOUNDS THROUGH VAPOR PHASE DEPOSITION |
-
1972
- 1972-07-06 FR FR7224529A patent/FR2144851B1/fr not_active Expired
- 1972-07-07 DE DE19722233541 patent/DE2233541C3/en not_active Expired
- 1972-07-07 GB GB3201872A patent/GB1336288A/en not_active Expired
- 1972-07-07 NL NL7209496A patent/NL155986B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2233541A1 (en) | 1973-01-18 |
| NL155986B (en) | 1978-02-15 |
| DE2233541C3 (en) | 1980-01-31 |
| FR2144851B1 (en) | 1978-04-28 |
| NL7209496A (en) | 1973-01-09 |
| FR2144851A1 (en) | 1973-02-16 |
| DE2233541B2 (en) | 1976-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |