GB1308288A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1308288A
GB1308288A GB5478471A GB5478471A GB1308288A GB 1308288 A GB1308288 A GB 1308288A GB 5478471 A GB5478471 A GB 5478471A GB 5478471 A GB5478471 A GB 5478471A GB 1308288 A GB1308288 A GB 1308288A
Authority
GB
United Kingdom
Prior art keywords
doped
gates
nov
drain regions
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5478471A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1308288A publication Critical patent/GB1308288A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB5478471A 1970-11-28 1971-11-25 Semiconductor devices Expired GB1308288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2058660 1970-11-28

Publications (1)

Publication Number Publication Date
GB1308288A true GB1308288A (en) 1973-02-21

Family

ID=5789394

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5478471A Expired GB1308288A (en) 1970-11-28 1971-11-25 Semiconductor devices

Country Status (5)

Country Link
CH (1) CH537643A (enExample)
DE (1) DE2058660B1 (enExample)
FR (1) FR2115404B1 (enExample)
GB (1) GB1308288A (enExample)
IT (1) IT940667B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates

Also Published As

Publication number Publication date
FR2115404A1 (enExample) 1972-07-07
CH537643A (de) 1973-05-31
FR2115404B1 (enExample) 1975-08-29
DE2058660B1 (de) 1972-06-08
IT940667B (it) 1973-02-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee