IT940667B - Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido - Google Patents
Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solidoInfo
- Publication number
- IT940667B IT940667B IT31256/71A IT3125671A IT940667B IT 940667 B IT940667 B IT 940667B IT 31256/71 A IT31256/71 A IT 31256/71A IT 3125671 A IT3125671 A IT 3125671A IT 940667 B IT940667 B IT 940667B
- Authority
- IT
- Italy
- Prior art keywords
- circouits
- ports
- silicon
- procedure
- obtaining
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000000295 complement effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2058660 | 1970-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT940667B true IT940667B (it) | 1973-02-20 |
Family
ID=5789394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT31256/71A IT940667B (it) | 1970-11-28 | 1971-11-18 | Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH537643A (it) |
| DE (1) | DE2058660B1 (it) |
| FR (1) | FR2115404B1 (it) |
| GB (1) | GB1308288A (it) |
| IT (1) | IT940667B (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3821781A (en) * | 1972-11-01 | 1974-06-28 | Ibm | Complementary field effect transistors having p doped silicon gates |
-
1970
- 1970-11-28 DE DE19702058660D patent/DE2058660B1/de active Pending
-
1971
- 1971-11-18 IT IT31256/71A patent/IT940667B/it active
- 1971-11-25 FR FR7142266A patent/FR2115404B1/fr not_active Expired
- 1971-11-25 GB GB5478471A patent/GB1308288A/en not_active Expired
- 1971-11-26 CH CH1722071A patent/CH537643A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2115404B1 (it) | 1975-08-29 |
| CH537643A (de) | 1973-05-31 |
| DE2058660B1 (de) | 1972-06-08 |
| GB1308288A (en) | 1973-02-21 |
| FR2115404A1 (it) | 1972-07-07 |
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