GB1292060A - A method of manufacturing a semiconductor device - Google Patents
A method of manufacturing a semiconductor deviceInfo
- Publication number
- GB1292060A GB1292060A GB07585/70A GB1758570A GB1292060A GB 1292060 A GB1292060 A GB 1292060A GB 07585/70 A GB07585/70 A GB 07585/70A GB 1758570 A GB1758570 A GB 1758570A GB 1292060 A GB1292060 A GB 1292060A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- etching
- coated
- layers
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 238000005530 etching Methods 0.000 abstract 9
- 239000011347 resin Substances 0.000 abstract 5
- 229920005989 resin Polymers 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052786 argon Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229920000742 Cotton Polymers 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2861969A JPS5231711B1 (enrdf_load_stackoverflow) | 1969-04-15 | 1969-04-15 | |
JP2895769A JPS4824355B1 (enrdf_load_stackoverflow) | 1969-04-16 | 1969-04-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1292060A true GB1292060A (en) | 1972-10-11 |
Family
ID=26366757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB07585/70A Expired GB1292060A (en) | 1969-04-15 | 1970-04-14 | A method of manufacturing a semiconductor device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2018027A1 (enrdf_load_stackoverflow) |
GB (1) | GB1292060A (enrdf_load_stackoverflow) |
NL (1) | NL7005296A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2000190A (en) * | 1977-06-14 | 1979-01-04 | Sony Corp | Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched |
GB2202236A (en) * | 1987-03-09 | 1988-09-21 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1543845A (en) * | 1975-05-27 | 1979-04-11 | Fairchild Camera Instr Co | Production of a narrow opening to a surface of a material |
US4053349A (en) * | 1976-02-02 | 1977-10-11 | Intel Corporation | Method for forming a narrow gap |
IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
FR2460037A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur |
-
1970
- 1970-04-14 NL NL7005296A patent/NL7005296A/xx unknown
- 1970-04-14 GB GB07585/70A patent/GB1292060A/en not_active Expired
- 1970-04-15 DE DE19702018027 patent/DE2018027A1/de active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2000190A (en) * | 1977-06-14 | 1979-01-04 | Sony Corp | Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched |
GB2000190B (en) * | 1977-06-14 | 1982-03-17 | Sony Corp | Methods of electrolytically etching ferrite bodies and magnetic transducer heads including bodies so etched |
GB2202236A (en) * | 1987-03-09 | 1988-09-21 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition |
GB2202236B (en) * | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
Also Published As
Publication number | Publication date |
---|---|
DE2018027A1 (de) | 1970-10-22 |
NL7005296A (enrdf_load_stackoverflow) | 1970-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PCNP | Patent ceased through non-payment of renewal fee |