GB1287221A - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same

Info

Publication number
GB1287221A
GB1287221A GB3876/70A GB387670A GB1287221A GB 1287221 A GB1287221 A GB 1287221A GB 3876/70 A GB3876/70 A GB 3876/70A GB 387670 A GB387670 A GB 387670A GB 1287221 A GB1287221 A GB 1287221A
Authority
GB
United Kingdom
Prior art keywords
aqueous solution
silicon
type
jan
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3876/70A
Other languages
English (en)
Inventor
Yoshio Watanabe
Tetsushi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB1287221A publication Critical patent/GB1287221A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/191—Preparing SOI wafers using full isolation by porous oxide silicon [FIPOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
GB3876/70A 1969-01-29 1970-01-27 Semiconductor device and method of producing the same Expired GB1287221A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44005975A JPS4919030B1 (enExample) 1969-01-29 1969-01-29

Publications (1)

Publication Number Publication Date
GB1287221A true GB1287221A (en) 1972-08-31

Family

ID=11625834

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3876/70A Expired GB1287221A (en) 1969-01-29 1970-01-27 Semiconductor device and method of producing the same

Country Status (5)

Country Link
JP (1) JPS4919030B1 (enExample)
DE (1) DE2003952C3 (enExample)
FR (1) FR2029636B1 (enExample)
GB (1) GB1287221A (enExample)
NL (1) NL142825B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961353A (en) * 1974-10-21 1976-06-01 International Business Machines Corporation High power semiconductor device
US4016017A (en) * 1975-11-28 1977-04-05 International Business Machines Corporation Integrated circuit isolation structure and method for producing the isolation structure
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
GB2038548B (en) * 1978-10-27 1983-03-23 Nippon Telegraph & Telephone Isolating semiconductor device by porous silicon oxide

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE671953A (enExample) * 1964-11-05

Also Published As

Publication number Publication date
FR2029636A1 (enExample) 1970-10-23
DE2003952A1 (de) 1972-02-03
JPS4919030B1 (enExample) 1974-05-14
NL142825B (nl) 1974-07-15
NL7001170A (enExample) 1970-07-31
DE2003952C3 (de) 1975-03-20
FR2029636B1 (enExample) 1973-10-19
DE2003952B2 (de) 1974-08-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years