JPS4919030B1 - - Google Patents
Info
- Publication number
- JPS4919030B1 JPS4919030B1 JP44005975A JP597569A JPS4919030B1 JP S4919030 B1 JPS4919030 B1 JP S4919030B1 JP 44005975 A JP44005975 A JP 44005975A JP 597569 A JP597569 A JP 597569A JP S4919030 B1 JPS4919030 B1 JP S4919030B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P90/191—
-
- H10P50/00—
-
- H10P95/00—
-
- H10W10/181—
Landscapes
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44005975A JPS4919030B1 (enExample) | 1969-01-29 | 1969-01-29 | |
| GB3876/70A GB1287221A (en) | 1969-01-29 | 1970-01-27 | Semiconductor device and method of producing the same |
| NL707001170A NL142825B (nl) | 1969-01-29 | 1970-01-28 | Werkwijze voor de vervaardiging van een siliciumhalfgeleiderinrichting, en halfgeleiderinrichting, verkregen volgens deze werkwijze. |
| FR7003022A FR2029636B1 (enExample) | 1969-01-29 | 1970-01-28 | |
| DE2003952A DE2003952C3 (de) | 1969-01-29 | 1970-01-29 | Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44005975A JPS4919030B1 (enExample) | 1969-01-29 | 1969-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4919030B1 true JPS4919030B1 (enExample) | 1974-05-14 |
Family
ID=11625834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44005975A Pending JPS4919030B1 (enExample) | 1969-01-29 | 1969-01-29 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4919030B1 (enExample) |
| DE (1) | DE2003952C3 (enExample) |
| FR (1) | FR2029636B1 (enExample) |
| GB (1) | GB1287221A (enExample) |
| NL (1) | NL142825B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961353A (en) * | 1974-10-21 | 1976-06-01 | International Business Machines Corporation | High power semiconductor device |
| US4016017A (en) * | 1975-11-28 | 1977-04-05 | International Business Machines Corporation | Integrated circuit isolation structure and method for producing the isolation structure |
| US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
| GB2038548B (en) * | 1978-10-27 | 1983-03-23 | Nippon Telegraph & Telephone | Isolating semiconductor device by porous silicon oxide |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE671953A (enExample) * | 1964-11-05 |
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1969
- 1969-01-29 JP JP44005975A patent/JPS4919030B1/ja active Pending
-
1970
- 1970-01-27 GB GB3876/70A patent/GB1287221A/en not_active Expired
- 1970-01-28 NL NL707001170A patent/NL142825B/xx not_active IP Right Cessation
- 1970-01-28 FR FR7003022A patent/FR2029636B1/fr not_active Expired
- 1970-01-29 DE DE2003952A patent/DE2003952C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL142825B (nl) | 1974-07-15 |
| DE2003952B2 (de) | 1974-08-01 |
| DE2003952C3 (de) | 1975-03-20 |
| GB1287221A (en) | 1972-08-31 |
| DE2003952A1 (de) | 1972-02-03 |
| FR2029636B1 (enExample) | 1973-10-19 |
| FR2029636A1 (enExample) | 1970-10-23 |
| NL7001170A (enExample) | 1970-07-31 |