GB1281298A - IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES - Google Patents

IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES

Info

Publication number
GB1281298A
GB1281298A GB31837/70A GB3183770A GB1281298A GB 1281298 A GB1281298 A GB 1281298A GB 31837/70 A GB31837/70 A GB 31837/70A GB 3183770 A GB3183770 A GB 3183770A GB 1281298 A GB1281298 A GB 1281298A
Authority
GB
United Kingdom
Prior art keywords
base
sio2
relating
production
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31837/70A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691933664 external-priority patent/DE1933664C3/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1281298A publication Critical patent/GB1281298A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
GB31837/70A 1969-07-02 1970-07-01 IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES Expired GB1281298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691933664 DE1933664C3 (de) 1969-07-02 Verfahren zum Überziehen von Halbleiterscheiben mit einer Schicht aus Siliciumdioxyd

Publications (1)

Publication Number Publication Date
GB1281298A true GB1281298A (en) 1972-07-12

Family

ID=5738701

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31837/70A Expired GB1281298A (en) 1969-07-02 1970-07-01 IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES

Country Status (8)

Country Link
US (1) US3681132A (cg-RX-API-DMAC10.html)
AT (1) AT324423B (cg-RX-API-DMAC10.html)
CA (1) CA942602A (cg-RX-API-DMAC10.html)
CH (1) CH542936A (cg-RX-API-DMAC10.html)
FR (1) FR2056427A5 (cg-RX-API-DMAC10.html)
GB (1) GB1281298A (cg-RX-API-DMAC10.html)
NL (1) NL7005770A (cg-RX-API-DMAC10.html)
SE (1) SE359195B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052520A (en) * 1974-09-30 1977-10-04 American Optical Corporation Process for coating a synthetic polymer sheet material with a durable abrasion-resistant vitreous composition
US3991234A (en) * 1974-09-30 1976-11-09 American Optical Corporation Process for coating a lens of synthetic polymer with a durable abrasion resistant vitreous composition
DE2447224A1 (de) * 1974-10-03 1976-04-15 Ibm Deutschland Verfahren zum aufwachsen von pyrolitischen siliciumdioxidschichten
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
WO1985003460A1 (en) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby
US4707313A (en) * 1986-07-02 1987-11-17 A. O. Smith Corporation Method of making a laminated structure for use in an electrical apparatus
KR0170391B1 (ko) * 1989-06-16 1999-03-30 다카시마 히로시 피처리체 처리장치 및 처리방법
DE3936654C1 (cg-RX-API-DMAC10.html) * 1989-11-03 1990-12-20 Schott Glaswerke, 6500 Mainz, De
US5262204A (en) * 1989-11-03 1993-11-16 Schott Glaswerke Glass-ceramic article decorated with ceramic color and process for its production
FR2679898B1 (fr) * 1991-07-31 1993-11-05 Air Liquide Procede de formation d'une couche de silice sur une surface d'un objet en verre.
WO2006114686A1 (en) * 2005-04-25 2006-11-02 CARL ZEISS VISION SOUTH AFRICA (Pty) LTD A method and apparatus for coating objects
US20060266793A1 (en) * 2005-05-24 2006-11-30 Caterpillar Inc. Purging system having workpiece movement device

Also Published As

Publication number Publication date
DE1933664A1 (de) 1971-01-14
AT324423B (de) 1975-08-25
SE359195B (cg-RX-API-DMAC10.html) 1973-08-20
NL7005770A (cg-RX-API-DMAC10.html) 1971-01-05
FR2056427A5 (cg-RX-API-DMAC10.html) 1971-05-14
DE1933664B2 (de) 1976-01-22
US3681132A (en) 1972-08-01
CH542936A (de) 1973-10-15
CA942602A (en) 1974-02-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees