AT324423B - Verfahren zum überziehen von halbleiterscheiben mit einer gleichmässigen schicht aus siliciumdioxyd - Google Patents

Verfahren zum überziehen von halbleiterscheiben mit einer gleichmässigen schicht aus siliciumdioxyd

Info

Publication number
AT324423B
AT324423B AT588570A AT588570A AT324423B AT 324423 B AT324423 B AT 324423B AT 588570 A AT588570 A AT 588570A AT 588570 A AT588570 A AT 588570A AT 324423 B AT324423 B AT 324423B
Authority
AT
Austria
Prior art keywords
even layer
coating semi
conductor discs
dioxyde
silicon
Prior art date
Application number
AT588570A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691933664 external-priority patent/DE1933664C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT324423B publication Critical patent/AT324423B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
AT588570A 1969-07-02 1970-06-30 Verfahren zum überziehen von halbleiterscheiben mit einer gleichmässigen schicht aus siliciumdioxyd AT324423B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691933664 DE1933664C3 (de) 1969-07-02 Verfahren zum Überziehen von Halbleiterscheiben mit einer Schicht aus Siliciumdioxyd

Publications (1)

Publication Number Publication Date
AT324423B true AT324423B (de) 1975-08-25

Family

ID=5738701

Family Applications (1)

Application Number Title Priority Date Filing Date
AT588570A AT324423B (de) 1969-07-02 1970-06-30 Verfahren zum überziehen von halbleiterscheiben mit einer gleichmässigen schicht aus siliciumdioxyd

Country Status (8)

Country Link
US (1) US3681132A (de)
AT (1) AT324423B (de)
CA (1) CA942602A (de)
CH (1) CH542936A (de)
FR (1) FR2056427A5 (de)
GB (1) GB1281298A (de)
NL (1) NL7005770A (de)
SE (1) SE359195B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991234A (en) * 1974-09-30 1976-11-09 American Optical Corporation Process for coating a lens of synthetic polymer with a durable abrasion resistant vitreous composition
US4052520A (en) * 1974-09-30 1977-10-04 American Optical Corporation Process for coating a synthetic polymer sheet material with a durable abrasion-resistant vitreous composition
DE2447224A1 (de) * 1974-10-03 1976-04-15 Ibm Deutschland Verfahren zum aufwachsen von pyrolitischen siliciumdioxidschichten
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
DE3585901D1 (de) * 1984-02-13 1992-05-27 Iii Jerome J Schmitt Verfahren und vorrichtung fuer gasstrahlniederschlag von leitfaehigen und dielektrischen duennen festfilmen und so hergestellte erzeugnisse.
US4707313A (en) * 1986-07-02 1987-11-17 A. O. Smith Corporation Method of making a laminated structure for use in an electrical apparatus
KR0170391B1 (ko) * 1989-06-16 1999-03-30 다카시마 히로시 피처리체 처리장치 및 처리방법
DE3936654C1 (de) * 1989-11-03 1990-12-20 Schott Glaswerke, 6500 Mainz, De
US5262204A (en) * 1989-11-03 1993-11-16 Schott Glaswerke Glass-ceramic article decorated with ceramic color and process for its production
FR2679898B1 (fr) * 1991-07-31 1993-11-05 Air Liquide Procede de formation d'une couche de silice sur une surface d'un objet en verre.
WO2006114686A1 (en) * 2005-04-25 2006-11-02 CARL ZEISS VISION SOUTH AFRICA (Pty) LTD A method and apparatus for coating objects
US20060266793A1 (en) * 2005-05-24 2006-11-30 Caterpillar Inc. Purging system having workpiece movement device

Also Published As

Publication number Publication date
SE359195B (de) 1973-08-20
GB1281298A (en) 1972-07-12
FR2056427A5 (de) 1971-05-14
CA942602A (en) 1974-02-26
NL7005770A (de) 1971-01-05
DE1933664A1 (de) 1971-01-14
CH542936A (de) 1973-10-15
US3681132A (en) 1972-08-01
DE1933664B2 (de) 1976-01-22

Similar Documents

Publication Publication Date Title
AT333912B (de) Beschichtungsmittel fur substrate aus polycarbonat sowie verfahren zum beschichten der oberflache
AT320581B (de) Verfahren zum Überziehen von Oberflächen
CH458710A (de) Verfahren zum Beschichten von Substraten
CH529223A (de) Verfahren zum Abscheiden einer Schicht aus anorganischem Halbleiter- oder Isoliermaterial auf erhitzte Halbleiterscheiben
CH519789A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH499610A (de) Verfahren zum Herstellen von Gegenständen bestehend aus einem kapselntragenden Substrat
CH531942A (de) Verfahren zum Überziehen eines Substrates
CH540099A (de) Verfahren zum Beschichten einer Fläche
CH542936A (de) Verfahren zum Überziehen von Halbleiterscheiben mit einer gleichmässigen Schicht aus SiO2
CH535662A (de) Verfahren zum Überziehen eines Substrates
CH531944A (de) Verfahren zum Überziehen eines Substrates
DE1646193B2 (de) Verfahren zur herstellung einer duennen glatten schicht eines pulverfoermigen leuchtstoffmaterials
CH540993A (de) Verfahren zum Erzeugen einer Oxydschicht auf einem Silizium-Substrat
CH440230A (de) Verfahren zur Herstellung einer dotierten Schicht an der Oberfläche eines Halbleiterkristalls
CH505466A (de) Verfahren zum Polieren von Halbleiteroberflächen
CH399588A (de) Verfahren zum Bestimmen des spezifischen Widerstandes einer dünnen Halbleiterschicht
CH457374A (de) Verfahren zum Abscheiden einer epitaktischen Schicht von kristallinem Material
AT258364B (de) Verfahren zum Herstellen von Halbleiteranordnungen
AT308777B (de) Verfahren zum Einbrennen der Schicht einer Diazotypiedruckplatte
AT348474B (de) Vorrichtung zum aufbringen einer ebenen schicht
AT318009B (de) Verfahren zum Herstellen einer Metallschicht aus mehreren Metallfilmen auf Oberflächen von Halbleiterbauelementen
CH531943A (de) Verfahren zum Überziehen eines Substrates
CH532128A (de) Verfahren zum Aufdampfen einer dünnen Schicht
ATA658871A (de) Verfahren zum kontaktieren einer halbleiterscheibe
CH476515A (de) Verfahren zum Abscheiden einer einkristallinen Schicht aus Halbleitermaterial

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee