GB1280948A - Semiconductor structure - Google Patents
Semiconductor structureInfo
- Publication number
- GB1280948A GB1280948A GB57286/70A GB5728670A GB1280948A GB 1280948 A GB1280948 A GB 1280948A GB 57286/70 A GB57286/70 A GB 57286/70A GB 5728670 A GB5728670 A GB 5728670A GB 1280948 A GB1280948 A GB 1280948A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- contacts
- tracks
- emitter
- islands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88593169A | 1969-12-17 | 1969-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1280948A true GB1280948A (en) | 1972-07-12 |
Family
ID=25388015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB57286/70A Expired GB1280948A (en) | 1969-12-17 | 1970-12-02 | Semiconductor structure |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE760335A (enrdf_load_stackoverflow) |
DE (2) | DE7046690U (enrdf_load_stackoverflow) |
FR (1) | FR2186735A1 (enrdf_load_stackoverflow) |
GB (1) | GB1280948A (enrdf_load_stackoverflow) |
NL (1) | NL7018217A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2251727A1 (de) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps |
GB2175441A (en) * | 1985-05-03 | 1986-11-26 | Texas Instruments Ltd | Power bipolar transistor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
US5424563A (en) * | 1993-12-27 | 1995-06-13 | Harris Corporation | Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
-
1970
- 1970-12-02 GB GB57286/70A patent/GB1280948A/en not_active Expired
- 1970-12-09 FR FR7044402A patent/FR2186735A1/fr not_active Withdrawn
- 1970-12-14 NL NL7018217A patent/NL7018217A/xx unknown
- 1970-12-15 BE BE760335A patent/BE760335A/xx unknown
- 1970-12-17 DE DE19707046690U patent/DE7046690U/de not_active Expired
- 1970-12-17 DE DE19702062333 patent/DE2062333A1/de active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2251727A1 (de) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps |
GB2175441A (en) * | 1985-05-03 | 1986-11-26 | Texas Instruments Ltd | Power bipolar transistor |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
FR2186735A1 (enrdf_load_stackoverflow) | 1974-01-11 |
DE7046690U (de) | 1971-04-29 |
BE760335A (fr) | 1971-06-15 |
DE2062333A1 (de) | 1971-09-30 |
NL7018217A (enrdf_load_stackoverflow) | 1971-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |