FR2186735A1 - - Google Patents

Info

Publication number
FR2186735A1
FR2186735A1 FR7044402A FR7044402A FR2186735A1 FR 2186735 A1 FR2186735 A1 FR 2186735A1 FR 7044402 A FR7044402 A FR 7044402A FR 7044402 A FR7044402 A FR 7044402A FR 2186735 A1 FR2186735 A1 FR 2186735A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7044402A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2186735A1 publication Critical patent/FR2186735A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7044402A 1969-12-17 1970-12-09 Withdrawn FR2186735A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88593169A 1969-12-17 1969-12-17

Publications (1)

Publication Number Publication Date
FR2186735A1 true FR2186735A1 (enrdf_load_stackoverflow) 1974-01-11

Family

ID=25388015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7044402A Withdrawn FR2186735A1 (enrdf_load_stackoverflow) 1969-12-17 1970-12-09

Country Status (5)

Country Link
BE (1) BE760335A (enrdf_load_stackoverflow)
DE (2) DE2062333A1 (enrdf_load_stackoverflow)
FR (1) FR2186735A1 (enrdf_load_stackoverflow)
GB (1) GB1280948A (enrdf_load_stackoverflow)
NL (1) NL7018217A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (fr) * 1980-05-09 1981-11-13 Philips Nv Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5424563A (en) * 1993-12-27 1995-06-13 Harris Corporation Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482369A1 (fr) * 1980-05-09 1981-11-13 Philips Nv Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur

Also Published As

Publication number Publication date
DE7046690U (de) 1971-04-29
NL7018217A (enrdf_load_stackoverflow) 1971-06-21
BE760335A (fr) 1971-06-15
GB1280948A (en) 1972-07-12
DE2062333A1 (de) 1971-09-30

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Legal Events

Date Code Title Description
ST Notification of lapse