GB1288384A - - Google Patents

Info

Publication number
GB1288384A
GB1288384A GB534369A GB1288384DA GB1288384A GB 1288384 A GB1288384 A GB 1288384A GB 534369 A GB534369 A GB 534369A GB 1288384D A GB1288384D A GB 1288384DA GB 1288384 A GB1288384 A GB 1288384A
Authority
GB
United Kingdom
Prior art keywords
emitter
fingers
emitter region
base
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB534369A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1288384A publication Critical patent/GB1288384A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • H10D84/125BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
GB534369A 1969-01-31 1969-01-31 Expired GB1288384A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB534369 1969-01-31

Publications (1)

Publication Number Publication Date
GB1288384A true GB1288384A (enrdf_load_stackoverflow) 1972-09-06

Family

ID=9794339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB534369A Expired GB1288384A (enrdf_load_stackoverflow) 1969-01-31 1969-01-31

Country Status (4)

Country Link
DE (1) DE1965407A1 (enrdf_load_stackoverflow)
FR (1) FR2029746B1 (enrdf_load_stackoverflow)
GB (1) GB1288384A (enrdf_load_stackoverflow)
NL (1) NL6918915A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017750C2 (de) * 1980-05-09 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Also Published As

Publication number Publication date
NL6918915A (enrdf_load_stackoverflow) 1970-08-04
DE1965407A1 (de) 1970-08-13
FR2029746B1 (enrdf_load_stackoverflow) 1974-12-06
FR2029746A1 (enrdf_load_stackoverflow) 1970-10-23

Similar Documents

Publication Publication Date Title
SE7701884L (sv) Halvledaranordning med sekerhetskrets
SE7900337L (sv) Halvledaranordning
GB1099381A (en) Solid state field-effect devices
GB1304728A (enrdf_load_stackoverflow)
IE33733B1 (en) Semiconductor controlled rectifier device
GB1211959A (en) Power transistors
GB1530168A (en) Semiconductor device of the planar epitaxial type
GB1175049A (en) Controllable tunnel diode
IE33787L (en) Interdigitated contact system
US3368123A (en) Semiconductor device having uniform current density on emitter periphery
GB1306570A (en) Field effect semiconductor device
GB1288384A (enrdf_load_stackoverflow)
EP0348916A3 (en) Mosfet equivalent voltage drive semiconductor device
JPS57208177A (en) Semiconductor negative resistance element
GB1304741A (enrdf_load_stackoverflow)
GB1217880A (en) Lateral transistor with auxiliary control electrode
GB1283639A (en) Power transistor
GB1094336A (en) Thyristors
GB1209740A (en) Transistors
GB1509012A (en) Transistor circuits
GB1377420A (en) Thyristors
GB954731A (en) High gain transistor
GB1366967A (en) Bidirectional thyristor with ignition properties
SE315952B (enrdf_load_stackoverflow)
GB1031449A (en) Improvements in or relating to semiconductor elements

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years