GB1280943A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1280943A
GB1280943A GB4576870A GB4576870A GB1280943A GB 1280943 A GB1280943 A GB 1280943A GB 4576870 A GB4576870 A GB 4576870A GB 4576870 A GB4576870 A GB 4576870A GB 1280943 A GB1280943 A GB 1280943A
Authority
GB
United Kingdom
Prior art keywords
layer
states
semi
regions
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4576870A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1280943A publication Critical patent/GB1280943A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

1280943 Semi-conductor devices LICENTIA PATENT-VERWALTUNGS GmbH 25 Sept 1970 [27 Sept 1969] 45768/70 Heading H1K A semi-conductor device comprises a monocrystalline semi-conductor body with at least two regions of differing conductivity type, and a passivation layer on its surface, the layer being capable of assuming two different resistivity states. The layer may be of vitreous material, the states being of high resistivity, and low resistivity, both of which states are stable. In an embodiment a silicon body 17, including diffused regions 12, 13, is used to form a transistor, the surface being covered by vapour deposition or cathodic sputtering with a vitreous layer 5 of silicon dioxide, boron trioxide, or phosphorus pentoxide and oxides of copper or tungsten. The layer as formed is in its high resistivity state and is a few microns thick. Contacts are made to the layer over the desied regions of the body, and each junction forwardly biased by voltages at the contacts. When the voltage reaches a threshold value the portion of the layer immediately below the contact changes to its low resistivity state, and the voltage is removed. Low resistance contact is thus made to the body through the layer without windows, and their attendant surface effects, being required in the layer. Prior to being contacted, the layer may act as a diffusion mask. In an alternative embodiment a diode may be formed, one region being diffused or produced by epitaxial growth, the diode being enclosed within a glass envelope.
GB4576870A 1969-09-27 1970-09-25 Semiconductor device Expired GB1280943A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948895 DE1948895B2 (en) 1969-09-27 1969-09-27 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING

Publications (1)

Publication Number Publication Date
GB1280943A true GB1280943A (en) 1972-07-12

Family

ID=5746681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4576870A Expired GB1280943A (en) 1969-09-27 1970-09-25 Semiconductor device

Country Status (4)

Country Link
JP (1) JPS4832936B1 (en)
DE (1) DE1948895B2 (en)
FR (1) FR2062689A5 (en)
GB (1) GB1280943A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175731A (en) * 1982-04-06 1983-10-15 Matsushita Electric Ind Co Ltd Petroleum stove with electric heater
JPS58184431A (en) * 1982-04-21 1983-10-27 Matsushita Electric Ind Co Ltd Oil stove with electric heater

Also Published As

Publication number Publication date
FR2062689A5 (en) 1971-06-25
DE1948895B2 (en) 1971-07-29
JPS4832936B1 (en) 1973-10-09
DE1948895A1 (en) 1971-04-08

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees