GB1261651A - Method of making semiconductor devices - Google Patents

Method of making semiconductor devices

Info

Publication number
GB1261651A
GB1261651A GB01127/69A GB1112769A GB1261651A GB 1261651 A GB1261651 A GB 1261651A GB 01127/69 A GB01127/69 A GB 01127/69A GB 1112769 A GB1112769 A GB 1112769A GB 1261651 A GB1261651 A GB 1261651A
Authority
GB
United Kingdom
Prior art keywords
layer
gold
deposited
chromium
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB01127/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1261651A publication Critical patent/GB1261651A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB01127/69A 1968-03-01 1969-03-03 Method of making semiconductor devices Expired GB1261651A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH313168A CH471242A (de) 1968-03-01 1968-03-01 Verfahren zur selektiven Maskierung zu bearbeitender Flächen

Publications (1)

Publication Number Publication Date
GB1261651A true GB1261651A (en) 1972-01-26

Family

ID=4249277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB01127/69A Expired GB1261651A (en) 1968-03-01 1969-03-03 Method of making semiconductor devices

Country Status (5)

Country Link
JP (1) JPS4939550B1 (https=)
CH (1) CH471242A (https=)
DE (1) DE1909290A1 (https=)
FR (1) FR1600775A (https=)
GB (1) GB1261651A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127751A (en) * 1982-10-06 1984-04-18 Plessey Co Plc Producing narrow features in electrical devices
CN116936687A (zh) * 2023-09-18 2023-10-24 金阳(泉州)新能源科技有限公司 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters
FR2104704B1 (https=) * 1970-08-07 1973-11-23 Thomson Csf

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127751A (en) * 1982-10-06 1984-04-18 Plessey Co Plc Producing narrow features in electrical devices
CN116936687A (zh) * 2023-09-18 2023-10-24 金阳(泉州)新能源科技有限公司 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法
CN116936687B (zh) * 2023-09-18 2023-12-15 金阳(泉州)新能源科技有限公司 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法

Also Published As

Publication number Publication date
DE1909290A1 (de) 1969-09-25
CH471242A (de) 1969-04-15
FR1600775A (https=) 1970-07-27
JPS4939550B1 (https=) 1974-10-26

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