JPS4939550B1 - - Google Patents
Info
- Publication number
- JPS4939550B1 JPS4939550B1 JP44012675A JP1267569A JPS4939550B1 JP S4939550 B1 JPS4939550 B1 JP S4939550B1 JP 44012675 A JP44012675 A JP 44012675A JP 1267569 A JP1267569 A JP 1267569A JP S4939550 B1 JPS4939550 B1 JP S4939550B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/871—Vertical FETs having Schottky gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4939550B1 true JPS4939550B1 (https=) | 1974-10-26 |
Family
ID=4249277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44012675A Pending JPS4939550B1 (https=) | 1968-03-01 | 1969-02-21 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4939550B1 (https=) |
| CH (1) | CH471242A (https=) |
| DE (1) | DE1909290A1 (https=) |
| FR (1) | FR1600775A (https=) |
| GB (1) | GB1261651A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
| FR2104704B1 (https=) * | 1970-08-07 | 1973-11-23 | Thomson Csf | |
| GB2127751B (en) * | 1982-10-06 | 1986-04-23 | Plessey Co Plc | Producing narrow features in electrical devices |
| CN116936687B (zh) * | 2023-09-18 | 2023-12-15 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
-
1968
- 1968-03-01 CH CH313168A patent/CH471242A/de not_active IP Right Cessation
- 1968-12-30 FR FR1600775D patent/FR1600775A/fr not_active Expired
-
1969
- 1969-02-21 JP JP44012675A patent/JPS4939550B1/ja active Pending
- 1969-02-25 DE DE19691909290 patent/DE1909290A1/de not_active Withdrawn
- 1969-03-03 GB GB01127/69A patent/GB1261651A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1909290A1 (de) | 1969-09-25 |
| CH471242A (de) | 1969-04-15 |
| FR1600775A (https=) | 1970-07-27 |
| GB1261651A (en) | 1972-01-26 |