GB1250201A - - Google Patents
Info
- Publication number
- GB1250201A GB1250201A GB1250201DA GB1250201A GB 1250201 A GB1250201 A GB 1250201A GB 1250201D A GB1250201D A GB 1250201DA GB 1250201 A GB1250201 A GB 1250201A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vapour
- deposited
- nov
- deposits
- nucleating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052762 osmium Inorganic materials 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 239000003039 volatile agent Substances 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1636267A CH490515A (de) | 1967-11-22 | 1967-11-22 | Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elektrisch isolierenden amorphen, poly- oder einkristallinen Unterlage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1250201A true GB1250201A (enrdf_load_stackoverflow) | 1971-10-20 |
Family
ID=4416688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1250201D Expired GB1250201A (enrdf_load_stackoverflow) | 1967-11-22 | 1968-11-05 |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH490515A (enrdf_load_stackoverflow) |
| DE (1) | DE1806578A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1592287A (enrdf_load_stackoverflow) |
| GB (1) | GB1250201A (enrdf_load_stackoverflow) |
| NL (1) | NL6816693A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2129019A (en) * | 1982-09-30 | 1984-05-10 | Western Electric Co | Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material |
| FR2588416A1 (fr) * | 1985-10-07 | 1987-04-10 | Canon Kk | Procede de formation selective d'un film depose |
| FR2603738A1 (fr) * | 1986-04-28 | 1988-03-11 | Canon Kk | Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2572219B1 (fr) * | 1984-10-23 | 1987-05-29 | Efcis | Procede de fabrication de circuits integres sur substrat isolant |
| JPH0732124B2 (ja) * | 1986-01-24 | 1995-04-10 | シャープ株式会社 | 半導体装置の製造方法 |
| US5427630A (en) * | 1994-05-09 | 1995-06-27 | International Business Machines Corporation | Mask material for low temperature selective growth of silicon or silicon alloys |
-
1967
- 1967-11-22 CH CH1636267A patent/CH490515A/de not_active IP Right Cessation
-
1968
- 1968-11-02 DE DE19681806578 patent/DE1806578A1/de active Pending
- 1968-11-05 GB GB1250201D patent/GB1250201A/en not_active Expired
- 1968-11-18 FR FR1592287D patent/FR1592287A/fr not_active Expired
- 1968-11-22 NL NL6816693A patent/NL6816693A/xx unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2129019A (en) * | 1982-09-30 | 1984-05-10 | Western Electric Co | Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material |
| FR2588416A1 (fr) * | 1985-10-07 | 1987-04-10 | Canon Kk | Procede de formation selective d'un film depose |
| GB2183090A (en) * | 1985-10-07 | 1987-05-28 | Canon Kk | Method for selective formation of deposited film |
| GB2183090B (en) * | 1985-10-07 | 1989-09-13 | Canon Kk | Method for selective formation of deposited film |
| FR2603738A1 (fr) * | 1986-04-28 | 1988-03-11 | Canon Kk | Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique |
Also Published As
| Publication number | Publication date |
|---|---|
| CH490515A (de) | 1970-05-15 |
| NL6816693A (enrdf_load_stackoverflow) | 1969-05-27 |
| DE1806578A1 (de) | 1969-06-12 |
| FR1592287A (enrdf_load_stackoverflow) | 1970-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |