FR1592287A - - Google Patents

Info

Publication number
FR1592287A
FR1592287A FR1592287DA FR1592287A FR 1592287 A FR1592287 A FR 1592287A FR 1592287D A FR1592287D A FR 1592287DA FR 1592287 A FR1592287 A FR 1592287A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1592287A publication Critical patent/FR1592287A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR1592287D 1967-11-22 1968-11-18 Expired FR1592287A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1636267A CH490515A (de) 1967-11-22 1967-11-22 Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elektrisch isolierenden amorphen, poly- oder einkristallinen Unterlage

Publications (1)

Publication Number Publication Date
FR1592287A true FR1592287A (enrdf_load_stackoverflow) 1970-05-11

Family

ID=4416688

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1592287D Expired FR1592287A (enrdf_load_stackoverflow) 1967-11-22 1968-11-18

Country Status (5)

Country Link
CH (1) CH490515A (enrdf_load_stackoverflow)
DE (1) DE1806578A1 (enrdf_load_stackoverflow)
FR (1) FR1592287A (enrdf_load_stackoverflow)
GB (1) GB1250201A (enrdf_load_stackoverflow)
NL (1) NL6816693A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855014A (en) * 1986-01-24 1989-08-08 Sharp Kabushiki Kaisha Method for manufacturing semiconductor devices
US5565031A (en) * 1994-05-09 1996-10-15 International Business Machines Corporation Method for low temperature selective growth of silicon or silicon alloys

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
FR2572219B1 (fr) * 1984-10-23 1987-05-29 Efcis Procede de fabrication de circuits integres sur substrat isolant
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film
JPH0828357B2 (ja) * 1986-04-28 1996-03-21 キヤノン株式会社 多層構造の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855014A (en) * 1986-01-24 1989-08-08 Sharp Kabushiki Kaisha Method for manufacturing semiconductor devices
US5565031A (en) * 1994-05-09 1996-10-15 International Business Machines Corporation Method for low temperature selective growth of silicon or silicon alloys

Also Published As

Publication number Publication date
CH490515A (de) 1970-05-15
GB1250201A (enrdf_load_stackoverflow) 1971-10-20
NL6816693A (enrdf_load_stackoverflow) 1969-05-27
DE1806578A1 (de) 1969-06-12

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