GB1237662A - Method for manufacturing semiconductor device with passivation film - Google Patents

Method for manufacturing semiconductor device with passivation film

Info

Publication number
GB1237662A
GB1237662A GB22634/69A GB2263469A GB1237662A GB 1237662 A GB1237662 A GB 1237662A GB 22634/69 A GB22634/69 A GB 22634/69A GB 2263469 A GB2263469 A GB 2263469A GB 1237662 A GB1237662 A GB 1237662A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon oxide
phosphorus
forming
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22634/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1237662A publication Critical patent/GB1237662A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6518—
    • H10P14/662—
    • H10P14/6334—
    • H10P14/69215—
    • H10P14/6923—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
GB22634/69A 1968-05-07 1969-05-02 Method for manufacturing semiconductor device with passivation film Expired GB1237662A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3046668 1968-05-07
JP3046568 1968-05-07

Publications (1)

Publication Number Publication Date
GB1237662A true GB1237662A (en) 1971-06-30

Family

ID=26368817

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22634/69A Expired GB1237662A (en) 1968-05-07 1969-05-02 Method for manufacturing semiconductor device with passivation film

Country Status (5)

Country Link
US (1) US3615941A (esLanguage)
DE (1) DE1923035A1 (esLanguage)
FR (1) FR2011823B1 (esLanguage)
GB (1) GB1237662A (esLanguage)
NL (1) NL6906890A (esLanguage)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
JPS5317860B1 (esLanguage) * 1971-01-22 1978-06-12
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
JPS5160454A (ja) * 1974-11-22 1976-05-26 Hitachi Ltd Tasohogomakunokeiseiho
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
EP0560617A3 (en) * 1992-03-13 1993-11-24 Kawasaki Steel Co Method of manufacturing insulating film on semiconductor device and apparatus for carrying out the same
US5470801A (en) * 1993-06-28 1995-11-28 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
CN113113324B (zh) * 2021-04-07 2024-02-06 捷捷半导体有限公司 一种钝化层制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449089A (fr) * 1964-07-09 1966-08-12 Rca Corp Dispositifs semi-conducteurs
CH456570A (de) * 1965-11-18 1968-07-31 Geigy Ag J R Verfahren zur Herstellung von neuen substituierten Harnstoffderivaten
GB1172491A (en) * 1967-03-29 1969-12-03 Hitachi Ltd A method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
NL6906890A (esLanguage) 1969-11-11
DE1923035A1 (de) 1969-11-13
US3615941A (en) 1971-10-26
FR2011823A1 (esLanguage) 1970-03-13
FR2011823B1 (esLanguage) 1974-02-22

Similar Documents

Publication Publication Date Title
GB1237662A (en) Method for manufacturing semiconductor device with passivation film
JPS5745259A (en) Resin sealing type semiconductor device
US3623219A (en) Method for isolating semiconductor devices from a wafer of semiconducting material
GB1227779A (esLanguage)
US3471754A (en) Isolation structure for integrated circuits
GB1190893A (en) A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
GB1503017A (en) Method of manufacturing semiconductor devices
JPS5599722A (en) Preparation of semiconductor device
GB1090649A (en) Surface treatment for semiconductor devices
GB1027377A (en) Semiconductor device and method of making the same
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
GB994814A (en) Protective cover for electrical conductor bodies
US3695956A (en) Method for forming isolated semiconductor devices
US3783119A (en) Method for passivating semiconductor material and field effect transistor formed thereby
GB1186625A (en) Improvements in and relating to Semiconductor Devices
GB1079046A (en) Improvements in and relating to semiconductor devices
GB954989A (en) Method of forming junction semiconductive devices having thin layers
JPS57194525A (en) Manufacture of semiconductor device
GB1327204A (en) Semiconductor devices
JPS57196543A (en) Manufacture of semiconductor device
Fränz et al. Distribution of sodium in silicon nitride
GB1172491A (en) A method of manufacturing a semiconductor device
JPS57102053A (en) Semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
GB1504484A (en) Semiconductor device and a method for manufacturing the same

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee