GB1229900A - - Google Patents

Info

Publication number
GB1229900A
GB1229900A GB1229900DA GB1229900A GB 1229900 A GB1229900 A GB 1229900A GB 1229900D A GB1229900D A GB 1229900DA GB 1229900 A GB1229900 A GB 1229900A
Authority
GB
United Kingdom
Prior art keywords
whiskers
metal
auxiliary source
partial pressure
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1229900A publication Critical patent/GB1229900A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1229900D 1968-04-13 1969-04-10 Expired GB1229900A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (enrdf_load_stackoverflow) 1968-04-13 1968-04-13

Publications (1)

Publication Number Publication Date
GB1229900A true GB1229900A (enrdf_load_stackoverflow) 1971-04-28

Family

ID=19803336

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1229900D Expired GB1229900A (enrdf_load_stackoverflow) 1968-04-13 1969-04-10

Country Status (9)

Country Link
US (1) US3632405A (enrdf_load_stackoverflow)
BE (1) BE731440A (enrdf_load_stackoverflow)
CH (1) CH538300A (enrdf_load_stackoverflow)
DE (1) DE1917136C3 (enrdf_load_stackoverflow)
ES (1) ES365930A1 (enrdf_load_stackoverflow)
FR (1) FR2006185A1 (enrdf_load_stackoverflow)
GB (1) GB1229900A (enrdf_load_stackoverflow)
NL (1) NL6805300A (enrdf_load_stackoverflow)
NO (1) NO124059B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
JP2697474B2 (ja) * 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
TW554388B (en) 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique

Also Published As

Publication number Publication date
DE1917136A1 (de) 1970-09-24
US3632405A (en) 1972-01-04
BE731440A (enrdf_load_stackoverflow) 1969-10-13
FR2006185A1 (enrdf_load_stackoverflow) 1969-12-19
NL6805300A (enrdf_load_stackoverflow) 1969-10-15
DE1917136B2 (enrdf_load_stackoverflow) 1973-10-04
NO124059B (enrdf_load_stackoverflow) 1972-02-28
CH538300A (de) 1973-06-30
DE1917136C3 (de) 1974-05-16
ES365930A1 (es) 1971-03-16

Similar Documents

Publication Publication Date Title
GB1213156A (en) Manufacturing filamentary silicon carbide crystals
JP4553489B2 (ja) 炭化珪素のバルク単結晶の生成
KR20010079970A (ko) 알루미늄 나이트라이드, 실리콘 카바이드의 벌크 단결정,및 알루미늄 나이트라이드:실리콘카바이드 합금 벌크단결정의 제조
JPS5792591A (en) Production of single crystal
GB1229900A (enrdf_load_stackoverflow)
JPH06128094A (ja) 炭化ケイ素単結晶の製造方法
Kato et al. Formation of ultrafine powders of refractory nitrides and carbides by vapor phase reaction
GB1336672A (en) Methods of epitaxially depositing a semiconductor compound
RU1834839C (ru) Способ насыщени изделий из пористого углеродного материала карбидом кремни
GB1430480A (en) Methods of making single crystal intermetallic compounds semi conductors
GB1220311A (en) Improvements in or relating to the manufacture of magnesium-aluminium spinel crystals
GB1473485A (en) Method for growing crystals of iii-v compound semicon ductors
US3489621A (en) Method of producing highly pure crystalline,especially monocrystalline materials
GB1490114A (en) Growing crystals from a melt
JPS63129033A (ja) ガラス原料供給方法
GB1278838A (en) Silicon nitride whiskers
US3607054A (en) Method for extending the growth of vapor-liquid-solid grown crystals
GB1337999A (en) Methods and apparatus suitable for producing a phosphide
GB1432240A (en) Method for the vapour-phase growth of single crystals
GB1354697A (en) Method of growing crystals
Mogilevskii et al. Growing Single Crystals of the LaNi sub 5 Intermetallide
JPS5767018A (en) Formation of film
Nesterov et al. Boundaries of the Metastable Region of Diamond Formation
Ricard et al. Crucible for Crystallization
GB1400562A (en) Growing crystals

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee