GB1185734A - Improvements in Controllable Semi-Conductor Devices - Google Patents

Improvements in Controllable Semi-Conductor Devices

Info

Publication number
GB1185734A
GB1185734A GB31187/67A GB3118767A GB1185734A GB 1185734 A GB1185734 A GB 1185734A GB 31187/67 A GB31187/67 A GB 31187/67A GB 3118767 A GB3118767 A GB 3118767A GB 1185734 A GB1185734 A GB 1185734A
Authority
GB
United Kingdom
Prior art keywords
cathode layer
layer
auxiliary
main
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31187/67A
Other languages
English (en)
Inventor
Per Svedberg
Bengt-Arne Vedin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Publication of GB1185734A publication Critical patent/GB1185734A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
GB31187/67A 1966-07-07 1967-07-06 Improvements in Controllable Semi-Conductor Devices Expired GB1185734A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9292/66A SE311701B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-07-07 1966-07-07

Publications (1)

Publication Number Publication Date
GB1185734A true GB1185734A (en) 1970-03-25

Family

ID=20276335

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31187/67A Expired GB1185734A (en) 1966-07-07 1967-07-06 Improvements in Controllable Semi-Conductor Devices

Country Status (6)

Country Link
US (1) US3526815A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH489912A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1589455A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1185734A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6708955A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE311701B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2349216A1 (fr) * 1976-04-19 1977-11-18 Gen Electric Dispositif semi-conducteur auto-protege
FR2414794A1 (fr) * 1978-01-16 1979-08-10 Siemens Ag Montage pour reduire le temps de recuperation d'un thyristor
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
EP1267414A3 (en) * 1994-02-24 2003-04-23 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of fabricating the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS541437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-18 1979-01-24
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
DE2458401C2 (de) * 1974-12-10 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
JPS5410837B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-10-29 1979-05-10
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3201596A (en) * 1959-12-17 1965-08-17 Westinghouse Electric Corp Sequential trip semiconductor device
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
BE624012A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1961-10-27
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
NL294340A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-07-27 1900-01-01
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
CH495631A (de) * 1964-11-28 1970-08-31 Licentia Gmbh Steuerbarer Halbleitergleichrichter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2349216A1 (fr) * 1976-04-19 1977-11-18 Gen Electric Dispositif semi-conducteur auto-protege
FR2414794A1 (fr) * 1978-01-16 1979-08-10 Siemens Ag Montage pour reduire le temps de recuperation d'un thyristor
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
EP1267414A3 (en) * 1994-02-24 2003-04-23 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of fabricating the same

Also Published As

Publication number Publication date
CH489912A (de) 1970-04-30
US3526815A (en) 1970-09-01
DE1589455A1 (de) 1970-06-04
NL6708955A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-01-08
SE311701B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1969-06-23

Similar Documents

Publication Publication Date Title
GB1185734A (en) Improvements in Controllable Semi-Conductor Devices
ES390673A1 (es) Un dispositivo tiristor-rectificador integral.
GB1193096A (en) Semi Conductor Device.
GB1239067A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB1359076A (en) Thyristor with firing current amplification
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB1485994A (en) Thyristors
GB1373158A (en) Thyristors
GB1263509A (en) Improved thyristor circuit
GB942901A (en) Improvements in controlled semi-conductor rectifiers
GB1164465A (en) Controllable Semiconductor Rectifiers
JPS5762562A (en) Semiconductor device
GB1088776A (en) Semiconductor controlled rectifier having a shorted emitter
GB1471426A (en) Thyristors
US4231054A (en) Thyristor with starting and generating cathode base contacts for use in rectifier circuits
GB1094336A (en) Thyristors
GB1376480A (en) Thyristors
GB1256161A (en) Improvements relating to four-layer semi-conductor devices
GB1192814A (en) Improvements in Semi-Conductor Devices
GB1377420A (en) Thyristors
GB1208794A (en) Improvements in thyristors
GB586574A (en) Anode tube for ionic valves for high voltage static current converters
JPS5651863A (en) Gate turn-off thyrister
GB1254500A (en) Semiconductor device
GB1162470A (en) Improvements in and relating to a Controllable Rectifier.

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]