GB1239067A - - Google Patents
Info
- Publication number
- GB1239067A GB1239067A GB1239067DA GB1239067A GB 1239067 A GB1239067 A GB 1239067A GB 1239067D A GB1239067D A GB 1239067DA GB 1239067 A GB1239067 A GB 1239067A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- shunts
- region
- base region
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69345467A | 1967-12-26 | 1967-12-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1239067A true GB1239067A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-07-14 |
Family
ID=24784718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1239067D Expired GB1239067A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-12-26 | 1968-11-25 |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4150390A (en) * | 1976-10-08 | 1979-04-17 | Bbc Brown, Boveri & Company, Limited | Thyristor with gate and emitter shunts distributed over the cathode surface |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3599061A (en) * | 1969-09-30 | 1971-08-10 | Usa | Scr emitter short patterns |
| US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
| BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
| US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
| GB1301193A (en) * | 1970-02-27 | 1972-12-29 | Mullard Ltd | Improvements in semiconductor devices |
| US3792320A (en) * | 1972-05-22 | 1974-02-12 | J Hutson | Semiconductor switch devices having improved shorted emitter configurations |
| US3795845A (en) * | 1972-12-26 | 1974-03-05 | Ibm | Semiconductor chip having connecting pads arranged in a non-orthogonal array |
| US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
| US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
| US4079406A (en) * | 1974-08-13 | 1978-03-14 | Siemens Aktiengesellschaft | Thyristor having a plurality of emitter shorts in defined spacial relationship |
| DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
| DE2520134C3 (de) * | 1975-05-06 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit einem rechteckigen Halbleiterelement |
| JPS5950109B2 (ja) * | 1976-07-12 | 1984-12-06 | 日本電気株式会社 | 半導体装置 |
| DE2815606A1 (de) * | 1978-04-11 | 1979-10-31 | Fiz Tekhn I Im A F Joffe Akade | Thyristor |
| JPS54149480A (en) * | 1978-05-12 | 1979-11-22 | Fiz Tekhn I Im Ei Efu Iofue Ak | Thyristor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3239728A (en) * | 1962-07-17 | 1966-03-08 | Gen Electric | Semiconductor switch |
| NL296608A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-08-15 | |||
| US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
| US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
| US3337782A (en) * | 1964-04-01 | 1967-08-22 | Westinghouse Electric Corp | Semiconductor controlled rectifier having a shorted emitter at a plurality of points |
-
1967
- 1967-12-26 US US693454A patent/US3476992A/en not_active Expired - Lifetime
-
1968
- 1968-11-21 IE IE1414/68A patent/IE32502B1/xx unknown
- 1968-11-25 GB GB1239067D patent/GB1239067A/en not_active Expired
- 1968-12-18 FR FR1599299D patent/FR1599299A/fr not_active Expired
- 1968-12-20 BE BE725781D patent/BE725781A/xx not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4150390A (en) * | 1976-10-08 | 1979-04-17 | Bbc Brown, Boveri & Company, Limited | Thyristor with gate and emitter shunts distributed over the cathode surface |
Also Published As
| Publication number | Publication date |
|---|---|
| BE725781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-06-20 |
| US3476992A (en) | 1969-11-04 |
| IE32502B1 (en) | 1973-08-22 |
| IE32502L (en) | 1969-06-26 |
| FR1599299A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 429A | Application made for amendment of specification (sect. 29/1949) | ||
| 429D | Case decided by the comptroller ** specification amended (sect. 29/1949) | ||
| PCNP | Patent ceased through non-payment of renewal fee |