CH489912A - Halbleiterbauelementeanordnung mit gesteuerten Halbleitern - Google Patents

Halbleiterbauelementeanordnung mit gesteuerten Halbleitern

Info

Publication number
CH489912A
CH489912A CH961267A CH961267A CH489912A CH 489912 A CH489912 A CH 489912A CH 961267 A CH961267 A CH 961267A CH 961267 A CH961267 A CH 961267A CH 489912 A CH489912 A CH 489912A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
component arrangement
controlled semiconductors
semiconductors
controlled
Prior art date
Application number
CH961267A
Other languages
English (en)
Inventor
Svedberg Per
Vedin Bengt-Arne
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Publication of CH489912A publication Critical patent/CH489912A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
CH961267A 1966-07-07 1967-07-04 Halbleiterbauelementeanordnung mit gesteuerten Halbleitern CH489912A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9292/66A SE311701B (de) 1966-07-07 1966-07-07

Publications (1)

Publication Number Publication Date
CH489912A true CH489912A (de) 1970-04-30

Family

ID=20276335

Family Applications (1)

Application Number Title Priority Date Filing Date
CH961267A CH489912A (de) 1966-07-07 1967-07-04 Halbleiterbauelementeanordnung mit gesteuerten Halbleitern

Country Status (6)

Country Link
US (1) US3526815A (de)
CH (1) CH489912A (de)
DE (1) DE1589455A1 (de)
GB (1) GB1185734A (de)
NL (1) NL6708955A (de)
SE (1) SE311701B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS541437B2 (de) * 1973-04-18 1979-01-24
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
DE2458401C2 (de) * 1974-12-10 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
JPS5410837B1 (de) * 1976-10-29 1979-05-10
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
DE2801722A1 (de) * 1978-01-16 1979-07-19 Siemens Ag Schaltungsanordnung zum herabsetzen der freiwerdezeit eines thyristors
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
JP3299374B2 (ja) * 1994-02-24 2002-07-08 三菱電機株式会社 サイリスタ及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3201596A (en) * 1959-12-17 1965-08-17 Westinghouse Electric Corp Sequential trip semiconductor device
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
BE624012A (de) * 1961-10-27
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
NL294340A (de) * 1962-07-27 1900-01-01
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
CH472119A (de) * 1964-11-28 1969-04-30 Licentia Gmbh Steuerbarer Halbleitergleichrichter

Also Published As

Publication number Publication date
US3526815A (en) 1970-09-01
SE311701B (de) 1969-06-23
GB1185734A (en) 1970-03-25
DE1589455A1 (de) 1970-06-04
NL6708955A (de) 1968-01-08

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Legal Events

Date Code Title Description
PL Patent ceased