GB1169748A - Radio Frequency Sputtering Apparatus - Google Patents

Radio Frequency Sputtering Apparatus

Info

Publication number
GB1169748A
GB1169748A GB331569A GB331569A GB1169748A GB 1169748 A GB1169748 A GB 1169748A GB 331569 A GB331569 A GB 331569A GB 331569 A GB331569 A GB 331569A GB 1169748 A GB1169748 A GB 1169748A
Authority
GB
United Kingdom
Prior art keywords
sputtering
electrodes
electrode
bias
sputtering apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB331569A
Inventor
Leslie Arthur Holland
Tony Ian Putner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Edwards High Vacuum International Ltd
Original Assignee
Edwards High Vacuum International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Edwards High Vacuum International Ltd filed Critical Edwards High Vacuum International Ltd
Priority to GB331569A priority Critical patent/GB1169748A/en
Publication of GB1169748A publication Critical patent/GB1169748A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

1,169,748. R.F. sputtering apparatus. EDWARDS HIGH VACUUM INTERNATIONAL Ltd. July 19, 1967, No.3315/69. Divided out of 1,169, 747. Heading C7F. The R.F. sputtering process disclosed in the parent Specification 1,169,747 is carried out in sputtering apparatus comprising a pair of non grounded electrodes in the form of a disc and surrounding annulus, the material to be sputtered being associated with the electrodes which are connected with a R.F. power supply and mounted in an evacuable chamber. As shown in Fig.1 the electrodes 3 and 4 are connected to a R.F. source of 10 Kc/s to 100 Mc/s and a voltage of 500 V. to 5 KV. Attached to or bridging the electrode is the target insulating material such as glass. A substrate holder mounted above the electrode may be water cooled and rotatable. An earthed metal shield 10 may be employed to inhibit earthy discharges. A magnetic field may also be applied to increase the ionization probability. Bias sputtering may be carried out in the apparatus of Fig. 2 which includes a further pair of electrodes 3<SP>1</SP> and 4<SP>1</SP> which form part of the substrate holder. The bias electrode 3<SP>1</SP> and 4<SP>1</SP> are tapped on to the secondary of the transformer 9 to give a lower R.F. voltage and less intensive bias sputtering than the main sputtering
GB331569A 1967-07-19 1967-07-19 Radio Frequency Sputtering Apparatus Expired GB1169748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB331569A GB1169748A (en) 1967-07-19 1967-07-19 Radio Frequency Sputtering Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB331569A GB1169748A (en) 1967-07-19 1967-07-19 Radio Frequency Sputtering Apparatus

Publications (1)

Publication Number Publication Date
GB1169748A true GB1169748A (en) 1969-11-05

Family

ID=9756006

Family Applications (1)

Application Number Title Priority Date Filing Date
GB331569A Expired GB1169748A (en) 1967-07-19 1967-07-19 Radio Frequency Sputtering Apparatus

Country Status (1)

Country Link
GB (1) GB1169748A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116793A (en) * 1974-12-23 1978-09-26 Telic Corporation Glow discharge method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116793A (en) * 1974-12-23 1978-09-26 Telic Corporation Glow discharge method and apparatus

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