GB1129272A - Improvements in and relating to metal-oxide-semiconductor capacitors - Google Patents

Improvements in and relating to metal-oxide-semiconductor capacitors

Info

Publication number
GB1129272A
GB1129272A GB67/66A GB6766A GB1129272A GB 1129272 A GB1129272 A GB 1129272A GB 67/66 A GB67/66 A GB 67/66A GB 6766 A GB6766 A GB 6766A GB 1129272 A GB1129272 A GB 1129272A
Authority
GB
United Kingdom
Prior art keywords
layer
oxide layer
dopant
jan
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB67/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1129272A publication Critical patent/GB1129272A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10P14/6322—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction

Landscapes

  • Semiconductor Integrated Circuits (AREA)
GB67/66A 1965-01-05 1966-01-03 Improvements in and relating to metal-oxide-semiconductor capacitors Expired GB1129272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR904A FR1428581A (fr) 1965-01-05 1965-01-05 Condensateur incorporé dans un circuit monolithique et son procédé de fabrication

Publications (1)

Publication Number Publication Date
GB1129272A true GB1129272A (en) 1968-10-02

Family

ID=8567339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB67/66A Expired GB1129272A (en) 1965-01-05 1966-01-03 Improvements in and relating to metal-oxide-semiconductor capacitors

Country Status (6)

Country Link
US (1) US3402332A (enExample)
CH (1) CH444966A (enExample)
DE (1) DE1564378A1 (enExample)
FR (1) FR1428581A (enExample)
GB (1) GB1129272A (enExample)
NL (1) NL6600003A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506887A (en) * 1966-02-23 1970-04-14 Motorola Inc Semiconductor device and method of making same
US4001869A (en) * 1975-06-09 1977-01-04 Sprague Electric Company Mos-capacitor for integrated circuits
US4875083A (en) * 1987-10-26 1989-10-17 North Carolina State University Metal-insulator-semiconductor capacitor formed on silicon carbide
JP2654393B2 (ja) * 1988-05-16 1997-09-17 株式会社日立製作所 半導体装置
US5801065A (en) * 1994-02-03 1998-09-01 Universal Semiconductor, Inc. Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
US3274025A (en) * 1963-12-13 1966-09-20 Corning Glass Works Method of forming an electrical capacitor

Also Published As

Publication number Publication date
FR1428581A (fr) 1966-02-18
US3402332A (en) 1968-09-17
DE1564378A1 (de) 1970-01-08
NL6600003A (enExample) 1966-07-06
CH444966A (de) 1967-10-15

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