GB1077752A - Improvements relating to semiconductor devices - Google Patents
Improvements relating to semiconductor devicesInfo
- Publication number
- GB1077752A GB1077752A GB23462/64A GB2346264A GB1077752A GB 1077752 A GB1077752 A GB 1077752A GB 23462/64 A GB23462/64 A GB 23462/64A GB 2346264 A GB2346264 A GB 2346264A GB 1077752 A GB1077752 A GB 1077752A
- Authority
- GB
- United Kingdom
- Prior art keywords
- carrier density
- induced
- june
- semi
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10P32/00—
-
- H10P32/141—
-
- H10P32/171—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/045—Electric field
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
- Y10T428/1259—Oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2876763 | 1963-06-06 | ||
| JP3267663 | 1963-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1077752A true GB1077752A (en) | 1967-08-02 |
Family
ID=26366912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23462/64A Expired GB1077752A (en) | 1963-06-06 | 1964-06-05 | Improvements relating to semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US3472703A (enExample) |
| DE (1) | DE1489052C2 (enExample) |
| FR (1) | FR1398276A (enExample) |
| GB (1) | GB1077752A (enExample) |
| NL (1) | NL6406428A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1942239A1 (de) * | 1968-09-09 | 1970-04-16 | Nat Semiconductor Corp | Flaechentransistor und Verfahren zur Herstellung desselben |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3860948A (en) * | 1964-02-13 | 1975-01-14 | Hitachi Ltd | Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby |
| US3627589A (en) * | 1970-04-01 | 1971-12-14 | Gen Electric | Method of stabilizing semiconductor devices |
| US3913218A (en) * | 1974-06-04 | 1975-10-21 | Us Army | Tunnel emitter photocathode |
| JP2934456B2 (ja) * | 1989-07-14 | 1999-08-16 | 株式会社日立製作所 | 表面処理方法及びその装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE971583C (de) * | 1951-09-07 | 1959-02-19 | Siemens Ag | Trockengleichrichter |
| BE538469A (enExample) * | 1954-05-27 | |||
| BE545324A (enExample) * | 1955-02-18 | |||
| DE1055095B (de) * | 1956-05-12 | 1959-04-16 | Siemens Ag | Verfahren zur Herstellung einer Halbleiterschicht, insbesondere fuer Hallspannungs-generatoren |
| US2845375A (en) * | 1956-06-11 | 1958-07-29 | Itt | Method for making fused junction semiconductor devices |
| NL265382A (enExample) * | 1960-03-08 | |||
| NL267831A (enExample) * | 1960-08-17 | |||
| AT227000B (de) * | 1961-02-02 | 1963-04-25 | Ibm | Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| NL297002A (enExample) * | 1962-08-23 | 1900-01-01 | ||
| NL6407158A (enExample) * | 1963-06-24 | 1964-12-28 | ||
| US3365793A (en) * | 1964-01-28 | 1968-01-30 | Hughes Aircraft Co | Method of making oxide protected semiconductor devices |
| US3357902A (en) * | 1964-05-01 | 1967-12-12 | Fairchild Camera Instr Co | Use of anodizing to reduce channelling on semiconductor material |
| US3303059A (en) * | 1964-06-29 | 1967-02-07 | Ibm | Methods of improving electrical characteristics of semiconductor devices and products so produced |
| BE674294A (enExample) * | 1964-12-28 |
-
1964
- 1964-06-03 US US372350A patent/US3472703A/en not_active Expired - Lifetime
- 1964-06-05 NL NL6406428A patent/NL6406428A/xx unknown
- 1964-06-05 GB GB23462/64A patent/GB1077752A/en not_active Expired
- 1964-06-05 FR FR977277A patent/FR1398276A/fr not_active Expired
- 1964-06-06 DE DE1489052A patent/DE1489052C2/de not_active Expired
-
1967
- 1967-08-09 US US659453A patent/US3497775A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1942239A1 (de) * | 1968-09-09 | 1970-04-16 | Nat Semiconductor Corp | Flaechentransistor und Verfahren zur Herstellung desselben |
Also Published As
| Publication number | Publication date |
|---|---|
| US3497775A (en) | 1970-02-24 |
| DE1489052B1 (de) | 1971-04-15 |
| DE1489052C2 (de) | 1975-03-06 |
| FR1398276A (fr) | 1965-05-07 |
| US3472703A (en) | 1969-10-14 |
| NL6406428A (enExample) | 1964-12-07 |
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